Infineon Technologies IPI80P04P405AKSA1

Overview

IPI80P04P405AKSA1 from Infineon Technologies is a P-channel enhancement-mode MOSFET in PG-TO262-3-1 package, rated for -40 V V_DS, 4.0–5.2 mΩ R_DS(on) at -10 V V_GS and -80 A I_D, AEC-Q101 qualified for automotive power switching applications including body control modules and DC motor drives.

For engineers reviewing the IPI80P04P405AKSA1 datasheet, IPI80P04P405AKSA1 pinout, IPI80P04P405AKSA1 application, or IPI80P04P405AKSA1 equivalent, key selection criteria include its -80 A continuous drain current capability, 1.2 K/W junction-to-case thermal resistance, -175 °C to +175 °C operating temperature range, and 100% single-pulse avalanche ruggedness rating.

Technical Context

This device operates as a high-current, low-side P-channel switch in 12 V automotive systems, with gate threshold voltage ranging from -2.0 V to -4.0 V and gate plateau voltage at -5.2 V, enabling robust turn-on under battery voltage sag conditions. Its dynamic parameters include 7900–10300 pF input capacitance and 76–150 pF reverse transfer capacitance, supporting controlled switching in PWM-driven loads.

The integrated body diode delivers -80 A continuous forward current and exhibits -1.0 to -1.3 V forward voltage at -80 A and 25 °C, with 61 ns reverse recovery time and 73 nC reverse recovery charge under defined test conditions (V_R = -20 V, I_F = -50 A, di/dt = -100 A/µs), suitable for freewheeling in inductive load circuits.

Key Specifications

Pinout & Package

Package: PG-TO262-3-1 (standard through-hole variant of TO-262, 3-pin, isolated tab). Pin 1 = Gate, Pin 2 = Drain (tab-connected), Pin 3 = Source.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel automotive MOSFET applications.

Compared with IPB80P04P405AKSA1 and IPP80P04P405AKSA1, IPI80P04P405AKSA1 offers identical electrical performance and AEC-Q101 qualification in a PG-TO262 package-providing mechanical robustness superior to TO-220 and thermal performance matching TO-263 while remaining compatible with wave-soldered assemblies.

Availability

IPI80P04P405AKSA1 is available at Aetrix Electronics and suitable for automotive body electronics, industrial motor controls, and 12 V DC power distribution systems requiring stable component supply, long-term lifecycle support, and AEC-Q101 compliance.

Supply support for IPI80P04P405AKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification aligned to ISO/TS 16949.

This part belongs to the OptiMOS™-P2 P-channel MOSFET product line, engineered specifically for high-efficiency, high-reliability 12 V automotive power switching where low R_DS(on), rugged avalanche behavior, and extended temperature operation are critical.

FAQ

What is the maximum allowable gate-source voltage for IPI80P04P405AKSA1?

The absolute maximum gate-source voltage is ±20 V. Operation beyond ±20 V risks permanent gate oxide damage. Recommended gate drive is -10 V for full enhancement and -5 V minimum for guaranteed turn-on, given the -2.0 to -4.0 V V_GS(th) specification. Transient overshoot must be clamped within this limit using Zener diodes or active gate drivers.

Is IPI80P04P405AKSA1 suitable for high-frequency PWM applications above 50 kHz?

Yes-it supports PWM frequencies up to 200 kHz with appropriate gate driving. Its 24 ns rise time and 65 ns fall time, combined with 116–151 nC total gate charge, allow efficient switching when driven by ≥2 A peak gate drivers. Layout parasitics and gate resistor selection must minimize ringing, especially due to its 76–150 pF Crss.

Does the device require external freewheeling diodes in inductive load applications?

No-its integrated body diode is rated for -80 A continuous forward current and -320 A pulsed current, with 61 ns t_rr and 73 nC Q_rr. It is designed for freewheeling in automotive inductive loads like motors and solenoids. However, for ultra-low-loss or bidirectional energy recovery, an external Schottky diode may be added in parallel.

How does the thermal performance of IPI80P04P405AKSA1 compare between TO262 and TO220 packages?

Both IPI80P04P405AKSA1 (TO262) and IPP80P04P405AKSA1 (TO220) share identical 1.2 K/W R_thJC, meaning junction-to-heatsink thermal resistance is equal when mounted identically. The TO262's larger plastic body improves mechanical stability and creepage distance, but thermal pad contact area and mounting torque determine actual R_thJC in practice.