Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies IPI90R1K0C3XKSA1

Part No.:
IPI90R1K0C3XKSA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-262-3 Long Leads, I2PAK, TO-262AA
Datasheet:
AetrixIPI90R1K0C3XKSA1.pdf
Description:
MOSFET N-CH 900V 5.7A TO262-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,881

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

IPI90R1K0C3XKSA1 from Infineon Technologies is a 900 V, 1.0 Ω (max) RDS(on) CoolMOS™ superjunction power MOSFET in PG-TO262 package, optimized for quasi-resonant flyback and forward SMPS topologies. It delivers 3.3 A continuous drain current at TC = 25 °C, 34 nC typical gate charge, and extreme dv/dt ruggedness up to 4 V/ns for robust operation in high-frequency industrial and consumer power supplies.

For engineers reviewing the IPI90R1K0C3XKSA1 datasheet, IPI90R1K0C3XKSA1 pinout, IPI90R1K0C3XKSA1 application, or IPI90R1K0C3XKSA1 equivalent, key selection criteria include its 900 V breakdown voltage, ultra-low Qg-RDS(on) figure-of-merit, JEDEC-qualified reliability, and reverse diode recovery performance (trr = 340 ns, Qrr = 4.1 µC) in hard-switched and resonant converters.

Technical Context

This CoolMOS™ device employs superjunction cell architecture enabling high-voltage blocking with low on-resistance. Its gate threshold voltage (2.5–3.5 V) and plateau voltage (4.6 V) support standard 10 V gate drive while maintaining noise immunity. The integrated body diode features soft reverse recovery characteristics critical for ZVS/ZCS operation.

Thermal design is supported by a junction-to-case thermal resistance of 1.4 K/W and a maximum operating junction temperature of 150 °C. Dynamic parameters-including Ciss = 850 pF, Coss = 42 pF, and td(off) = 400 ns-are specified under standardized 400 V, 3.3 A switching conditions with 62.4 Ω gate resistor.

Key Specifications

ParameterValue and Actual Design Meaning
VBR(DSS)900 V - Ensures safe operation in 400 V DC-link systems with margin for transient overvoltage
RDS(on), max1.0 Ω @ TJ = 25 °C - Enables low conduction loss in <50 W SMPS designs with moderate current stress
Qg, typ34 nC - Reduces gate drive power and enables efficient 100–300 kHz switching in QR flyback converters
trr340 ns - Limits diode reverse recovery losses and EMI generation during hard commutation
dv/dt ruggedness4 V/ns - Sustains reliable operation without spurious turn-on in high-dV/dt environments (e.g., PFC stages)
EAS97 mJ - Supports single-pulse avalanche capability for surge protection in offline adapters
RthJC1.4 K/W - Allows direct heatsink mounting for thermally constrained industrial enclosures

Pinout & Package

Package: PG-TO262 (3-pin, through-hole, isolated tab). Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source. Drain-connected metal tab provides low-inductance, high-current path and thermal interface to heatsink.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (Gate)Control electrodeReceives 10 V logic-level drive; 1.3 Ω internal gate resistance limits ringing and simplifies layout
Pin 2 (Drain / Tab)High-voltage power terminalExposed copper tab serves as primary heat dissipation path and high-current return node
Pin 3 (Source)Reference and return pathProvides low-impedance source connection for gate driver return and current sensing

Key Features

FeatureDesign Value
Ultra-low RDS(on) × Qg FoM34 nC × 1.0 Ω = 34 Ω·nC - Delivers best-in-class efficiency for 900 V MOSFETs in QR flyback
JEDEC-qualified reliabilityQualified per J-STD-20/JESD22 - Validated for PC silverbox and industrial SMPS lifetime requirements
Enhanced dv/dt ruggedness4 V/ns - Eliminates need for external snubbers in high-speed gate-drive layouts
Soft-recovery body diodetrr = 340 ns, Qrr = 4.1 µC - Reduces switching loss and EMI in discontinuous conduction mode (DCM)

Applications

PC Silverbox Power SupplyIndustrial SMPS

Use Scenario: 300–500 W open-frame AC/DC power supply for desktop PCs and gaming platforms.

IC Role / Device Role / Timing Role: Primary-side switch in quasi-resonant flyback topology operating at 65–130 kHz.

Use Value: Low Qg and RDS(on) reduce no-load power and improve full-load efficiency beyond 88% at 230 V AC input.

Use Scenario: 150–300 W sealed industrial power module for PLC and HMI controllers.

IC Role / Device Role / Timing Role: Main switch in forward converter with synchronous rectification and wide input range (85–264 V AC).

Use Value: 150 °C max junction temperature and 1.4 K/W RthJC enable derating-free operation in 70 °C ambient enclosures.

Consumer AdapterLED Driver

Use Scenario: Compact 65 W USB-C PD adapter with foldback overvoltage protection.

IC Role / Device Role / Timing Role: High-side switch in active-clamp flyback with variable frequency control.

Use Value: 900 V rating supports universal input (90–264 V AC) without series stacking; dv/dt ruggedness prevents false triggering during line transients.

Use Scenario: Constant-current LED driver for street lighting with 400 V DC bus.

IC Role / Device Role / Timing Role: Switching element in buck-boost topology driving 100 W LED strings.

Use Value: Soft-recovery diode minimizes voltage overshoot across LEDs during turn-off, improving system reliability and reducing snubber size.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IPW90R1K2C3FKSA1Same 900 V rating, but RDS(on) = 1.2 Ω (max), Qg = 28 nC; PG-TO247 packageHigher conduction loss, lower gate drive loss; larger footprint and higher thermal resistance (RthJC = 0.8 K/W)Prefer when gate drive power is limiting and board space allows TO247 mounting
STP9NK90ZFPZener-protected 900 V MOSFET, RDS(on) = 1.2 Ω (max), Qg = 45 nC; TO-220FP packageNo avalanche rating, higher Qg, no soft diode; lacks JEDEC qualification for industrial useAcceptable only in cost-sensitive, non-critical consumer adapters with tight BOM constraints

Compared with IPW90R1K2C3FKSA1 and STP9NK90ZFP, the IPI90R1K0C3XKSA1 offers superior RDS(on) × Qg FoM and JEDEC-qualified ruggedness in a compact TO262 form factor-making it optimal for space-constrained, high-efficiency industrial and computing power supplies where reliability and thermal performance are prioritized.

Availability

IPI90R1K0C3XKSA1 is available at Aetrix Electronics and suitable for PC silverbox power supplies, industrial SMPS modules, and consumer USB-C PD adapters requiring stable component supply and long-term lifecycle support.

Supply support for IPI90R1K0C3XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The CoolMOS™ product line targets high-efficiency, high-voltage SMPS applications-including server PSUs, industrial power supplies, and consumer adapters-by combining superjunction technology with optimized dynamic and thermal performance.

FAQ

What is the maximum continuous drain current for IPI90R1K0C3XKSA1 at 100 °C case temperature?

The maximum continuous drain current is 3.6 A at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the PG-TO262 package and ensures safe operation within the 150 °C maximum junction temperature limit under real-world heatsinking conditions.

Does IPI90R1K0C3XKSA1 have an integrated avalanche-rated body diode?

No-the body diode is not avalanche-rated. However, the device is qualified for repetitive unclamped inductive switching (UIS) with EAR = 50 mJ and single-pulse avalanche energy EAS = 97 mJ at ID = 1.1 A and VDD = 50 V, enabling limited energy absorption during transient events.

Can IPI90R1K0C3XKSA1 be used with 5 V gate drive?

It is not recommended. The gate threshold voltage range is 2.5–3.5 V, but full enhancement requires ≥10 V to achieve rated RDS(on) ≤ 1.0 Ω. At 5 V, RDS(on) increases significantly-exceeding 3 Ω-leading to excessive conduction loss and thermal runaway risk in continuous operation.

Is the PG-TO262 package lead-free and RoHS compliant?

Yes. The IPI90R1K0C3XKSA1 uses Pb-free lead plating and complies with RoHS Directive 2011/65/EU. The device is also qualified per J-STD-020 moisture sensitivity level (MSL) 1, allowing unlimited floor life at ≤30 °C/60% RH without baking prior to soldering.

IPI90R1K0C3XKSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
CoolMOS™
Package/Case:
TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
900 V
Current - Continuous Drain (Id) @ 25°C:
5.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
1Ohm @ 3.3A, 10V
Vgs(th) (Max) @ Id:
3.5V @ 370µA
Gate Charge (Qg) (Max) @ Vgs:
34 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
850 pF @ 100 V
FET Feature:
-
Power Dissipation (Max):
89W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO262-3

IPI90R1K0C3XKSA1 FAQ

1.How can I place an order for IPI90R1K0C3XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPI90R1K0C3XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPI90R1K0C3XKSA1 reliable?

The price and inventory of IPI90R1K0C3XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPI90R1K0C3XKSA1 is usually 5 days.

3.What payment methods are accepted for IPI90R1K0C3XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPI90R1K0C3XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPI90R1K0C3XKSA1?

IPI90R1K0C3XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPI90R1K0C3XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPI90R1K0C3XKSA1?

For technical support, including IPI90R1K0C3XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPI90R1K0C3XKSA1 requirements.

6.How does Aetrix verify that IPI90R1K0C3XKSA1 is sourced from the original manufacturer or authorized distributors?

All IPI90R1K0C3XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPI90R1K0C3XKSA1 meets industry standards.

7.What is the process for return or replacement of IPI90R1K0C3XKSA1?

All IPI90R1K0C3XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPI90R1K0C3XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPI90R1K0C3XKSA1 part is unused and in its original packaging.

Return procedure for IPI90R1K0C3XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IPI90R1K0C3XKSA1 Tags

  • IPI90R1K0C3XKSA1
  • IPI90R1K0C3XKSA1 PDF
  • IPI90R1K0C3XKSA1 Datasheet
  • IPI90R1K0C3XKSA1 Specifications
  • IPI90R1K0C3XKSA1 Images
  • Infineon Technologies
  • Infineon Technologies IPI90R1K0C3XKSA1
  • Buy IPI90R1K0C3XKSA1
  • IPI90R1K0C3XKSA1 Price
  • IPI90R1K0C3XKSA1 Distributor
  • IPI90R1K0C3XKSA1 Supplier
  • IPI90R1K0C3XKSA1 Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER