Infineon Technologies IPI90R500C3XKSA1

Overview

IPI90R500C3 from Infineon Technologies is a 900 V, 0.5 Ω (max) CoolMOS™ superjunction power MOSFET in PG-TO262 package, optimized for high-efficiency quasi-resonant flyback and forward SMPS topologies. It delivers 6.8 A continuous drain current at T_C = 100 °C, 68 nC total gate charge, and extreme dv/dt ruggedness up to 50 V/ns - enabling robust operation in consumer silverbox and industrial switch-mode power supplies.

For engineers reviewing the IPI90R500C3 datasheet, IPI90R500C3 pinout, IPI90R500C3 application, or IPI90R500C3 equivalent, key selection criteria include R_DS(on) vs. temperature stability, avalanche energy rating (388 mJ single-pulse), gate charge profile for ZVS/ZCS compatibility, and thermal resistance (R_thJC = 0.8 K/W) for heatsink-limited designs.

Technical Context

This 900 V CoolMOS™ C3-generation device uses charge-compensation technology to achieve ultra-low R_DS(on) × Q_g figure-of-merit (0.5 Ω × 68 nC). Its 50 V/ns dv/dt rating and 388 mJ single-pulse avalanche energy support reliable operation under hard-switching transients in offline SMPS.

The MOSFET features a fast, soft-recovery integrated body diode (t_rr = 480 ns, Q_rr = 8.5 µC) and low output capacitance (C_oss = 83 pF @ 100 V), reducing switching losses in resonant converters. Gate plateau voltage is 4.6 V, with threshold voltage V_GS(th) = 2.5–3.5 V.

Key Specifications

Pinout & Package

Package: PG-TO262 (3-pin, through-hole, isolated tab). Pin assignment confirmed per Infineon datasheet Rev. 1.0 (2008): Drain connected to metal tab; Source and Gate on leads.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with IPW90R500C3FKSA1 and STP9NK90Z, the IPI90R500C3 offers optimal balance of thermal interface simplicity (TO262 tab), dv/dt immunity, and gate drive efficiency - making it preferred for space-constrained, unventilated consumer power supplies where reliability under transient stress is critical.

Availability

IPI90R500C3 is available at Aetrix Electronics and suitable for PC silverbox power supplies, industrial SMPS, consumer TV power boards, and high-voltage LED drivers requiring stable component supply across multi-year production cycles.

Supply support for IPI90R500C3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive ICs, and industrial control solutions, with over 30 years of MOSFET innovation.

The CoolMOS™ C3 product line targets high-efficiency offline SMPS, delivering best-in-class R_DS(on) × Q_g for quasi-resonant and active-clamp forward converters in consumer and industrial applications.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The IPI90R500C3 supports 6.8 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This value accounts for thermal derating due to junction-to-case resistance (0.8 K/W) and safe operating area limits - not ambient temperature. Designers must verify PCB copper area and heatsink interface to maintain T_C ≤ 100 °C under full load.

Does this MOSFET require a gate resistor, and what value is recommended?

Yes, a gate resistor is required to control switching speed and suppress oscillation. Infineon's characterization used R_G = 30.9 Ω under V_DD = 400 V, I_D = 6.6 A test conditions. For QR flyback designs, 22–47 Ω is typical; lower values increase EMI but improve efficiency, while higher values reduce dv/dt stress at the cost of increased switching loss.

Is the body diode suitable for synchronous rectification?

No - the integrated body diode is optimized for clamping and freewheeling, not synchronous rectification. Its 480 ns reverse recovery time and 8.5 µC Q_rr cause significant loss if used as a controlled rectifier. For SR, an external low-Q_rr Schottky or dedicated SR controller with external MOSFET is required.

How does the 50 V/ns dv/dt rating impact PCB layout?

The 50 V/ns rating allows relaxed layout rules compared to standard MOSFETs: gate traces can be longer (≤5 cm) without added ferrite beads, and source inductance tolerance is higher (≤10 nH). However, minimizing drain-source loop area remains critical to limit EMI; ground plane under the tab and Kelvin source routing are still recommended for >100 kHz operation.