Infineon Technologies IPI90R800C3

Overview

IPI90R800C3 from Infineon Technologies is a 900 V, 4.1 A CoolMOS™ C3-series superjunction power MOSFET in PG-TO262 package, featuring R_DS(on) = 0.62 Ω (typ) at 25 °C and 10 V gate drive, Q_g = 42 nC (typ), and extreme dv/dt ruggedness up to 4 V/ns. It serves as a high-voltage switching device in quasi-resonant flyback and forward SMPS topologies for PC silverbox and industrial power supplies.

For engineers reviewing the IPI90R800C3 datasheet, IPI90R800C3 pinout, IPI90R800C3 application, or IPI90R800C3 equivalent, key selection criteria include its 900 V breakdown voltage, ultra-low gate charge, JEDEC-qualified avalanche robustness, thermal resistance of 1.2 K/W (junction-to-case), and diode reverse recovery charge of 5.3 µC - all critical for high-efficiency, high-reliability offline SMPS design.

Technical Context

This CoolMOS™ C3 transistor employs superjunction technology optimized for soft-switching topologies, delivering low conduction loss (R_DS(on) ≤ 0.8 Ω max at 150 °C) and fast switching with t_r = 20 ns and t_f = 32 ns under standard test conditions. Its dv/dt immunity of 4 V/ns enables stable operation in noisy high-dV/dt environments without spurious turn-on.

The device integrates a monolithic body diode with t_rr = 360 ns and Q_rr = 5.3 µC, supporting ZVS-capable designs while maintaining low E_AS = 157 mJ (single-pulse) at V_DD = 50 V. Thermal performance is defined by R_thJC = 1.2 K/W, enabling 102 W continuous dissipation at T_C = 25 °C.

Key Specifications

Pinout & Package

Package: PG-TO262 (3-pin, through-hole, isolated tab). Pin assignment verified per Infineon's official datasheet Rev. 1.0 (2008): Drain connected to metal tab; Source and Gate on leads.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with IPW90R1K2C3 and IPP90R800C3, the IPI90R800C3 uniquely balances low R_DS(on), moderate Q_g, and isolated-tab PG-TO262 packaging - making it optimal for thermally demanding, high-reliability flyback and forward converters requiring direct heatsink coupling without electrical isolation components.

Availability

IPI90R800C3 is available at Aetrix Electronics and suitable for PC silverbox SMPS, industrial AC-DC power supplies, and telecom rectifier modules requiring stable component supply, long-lifecycle support, and JEDEC-qualified avalanche robustness.

Supply support for IPI90R800C3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The CoolMOS™ C3 product line targets high-efficiency, high-power-density offline SMPS designs - specifically engineered for quasi-resonant flyback, forward, and active-clamp topologies operating at elevated switching frequencies.

FAQ

What is the maximum continuous drain current for IPI90R800C3 at 100 °C case temperature?

The maximum continuous drain current is 4.4 A at T_C = 100 °C, derated from 6.9 A at T_C = 25 °C per the datasheet's P_tot vs. T_C curve and R_DS(on) temperature coefficient. This reflects thermal limitation rather than silicon capability, and assumes adequate heatsinking to maintain case temperature.

Does IPI90R800C3 have an integrated body diode, and what are its key recovery parameters?

Yes, it features a monolithic body diode with V_SD = 0.8–1.2 V at I_F = 4.1 A and T_J = 25 °C, t_rr = 360 ns, and Q_rr = 5.3 µC. These values are measured at di/dt = 100 A/µs and V_R = 400 V, confirming suitability for soft-switched topologies where low recovery charge minimizes switching loss and EMI.

Can IPI90R800C3 be used in hard-switched PFC circuits?

It is not recommended for continuous hard-switched boost PFC above 150 kHz due to its relatively high C_oss (52 pF) and Q_gd (18 nC), which increase turn-off loss. However, it performs well in transition-mode (TM) PFC and clamped topologies where dv/dt stress and avalanche capability are prioritized over ultra-fast switching.

What is the gate threshold voltage range, and how does it affect drive circuit design?

V_GS(th) ranges from 2.5 V to 3.5 V at I_D = 0.46 mA. This tight threshold supports stable turn-on with standard 10 V gate drivers while avoiding unintended conduction from noise; however, gate drive must exceed 4.6 V (plateau voltage) to ensure full enhancement and minimize R_DS(on) spread across temperature and unit variance.