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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPI90R800C3XKSA1

Name: IPI90R800C3XKSA1
Brand: Infineon Technologies
SKU: IPI90R800C3XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPI90R800C3XKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IPI90R800C3XKSA1.pdf

Description:: MOSFET N-CH 900V 6.9A TO262-3

Quantity:: RFQ Add To RFQ list

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Inventory:8,739

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Product details

Overview

IPI90R800C3XKSA1 from Infineon Technologies is a 900 V, 4.1 A CoolMOS™ C3 superjunction power MOSFET in PG-TO262 package, featuring 0.62 Ω R_DS(on) at 10 V_GS and 25 °C, 42 nC total gate charge, and extreme dv/dt ruggedness (400 V/ns). It serves as a high-voltage switching device in quasi-resonant flyback and forward SMPS for PC silverbox and industrial power supplies.

For engineers reviewing the IPI90R800C3XKSA1 datasheet, IPI90R800C3XKSA1 pinout, IPI90R800C3XKSA1 application, or IPI90R800C3XKSA1 equivalent, key selection criteria include its 900 V breakdown voltage, low R_DS(on) × Q_g figure-of-merit, JEDEC-qualified reliability, ultra-low gate charge, and robust avalanche energy rating of 157 mJ.

Technical Context

This CoolMOS™ C3 device employs a superjunction structure optimized for high-voltage SMPS topologies requiring fast switching with low conduction and switching losses. Its 1.2 K/W junction-to-case thermal resistance and 150 °C maximum operating temperature support thermally constrained designs.

The MOSFET delivers 4.1 A continuous drain current at T_C = 25 °C, supports repetitive avalanche operation up to 1.4 A at 50 V, and exhibits 360 ns reverse recovery time with 5.3 µC Q_rr-enabling reliable synchronous rectification and hard-switched PFC stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_(BR)DSS	900 V - Withstands DC bus voltages up to 400 V in 230 VAC systems with margin for transients.
R_DS(on),max	0.8 Ω @ 25 °C - Enables low conduction loss in 4–6 A output stage designs at room temperature.
Q_g,typ	42 nC - Reduces gate drive power and enables use with standard 1–2 A peak gate drivers.
E_AS	157 mJ - Supports single-pulse inductive load switching without external snubbers in flyback converters.
dv/dt ruggedness	400 V/ns - Prevents spurious turn-on during fast voltage transitions in high-frequency resonant topologies.
t_rr	360 ns - Limits reverse recovery losses when used as freewheeling switch in forward converters.
R_thJC	1.2 K/W - Allows direct heatsink mounting for thermal management in compact 50–100 W industrial SMPS.

Pinout & Package

Package: PG-TO262 (3-pin, through-hole, isolated tab). Pin 1: Gate; Pin 2: Drain (tab-connected); Pin 3: Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Receives 10 V logic-level drive; low 1.3 Ω gate resistance minimizes ringing in high-dv/dt environments.
Pin 2 (Drain)	High-voltage power terminal	Internally connected to metal tab; requires isolation from heatsink unless electrically referenced to same potential.
Pin 3 (Source)	Reference and return path	Serves as common node for gate drive return and current sensing; low-inductance layout critical for EMI control.

Key Features

Feature	Design Value
Ultra-low R_DS(on) × Q_g	Enables >92% efficiency in 65–100 kHz QR flyback designs at 50–80 W output without active cooling.
JEDEC-qualified reliability	Validated per J-STD-20/JESD22 for consumer and industrial applications, supporting 10-year field life under thermal cycling.
High peak current capability	Withstands 15 A pulsed drain current (t_p limited by T_J,max), enabling robust startup and overload handling.
Reverse diode with low Q_rr	5.3 µC reverse recovery charge reduces cross-conduction loss when used in synchronous rectifier or half-bridge configurations.

Applications

PC Silverbox SMPS

Industrial AC/DC Power Supplies

Use Scenario: 230 VAC input, 12 V/5 A output QR flyback converter in desktop PC power supplies.

IC Role / Device Role / Timing Role: Primary-side high-voltage switching transistor operating at 65–100 kHz with zero-voltage switching.

Use Value: 0.62 Ω R_DS(on) and 42 nC Q_g reduce conduction and gate drive losses, improving full-load efficiency by ~1.2% vs. prior-generation MOSFETs.

Use Scenario: 3-phase 400 VAC input, 24 V/10 A output forward converter in factory automation controllers.

IC Role / Device Role / Timing Role: Main switching element in hard-switched forward topology with discrete gate driver and current-mode control.

Use Value: 157 mJ E_AS and 400 V/ns dv/dt rating eliminate need for external clamping circuits during line surges and transformer reset spikes.

Consumer LED Drivers

Telecom Rectifier Modules

Use Scenario: High-power LED streetlight driver using quasi-resonant buck-boost topology with 90–305 VAC universal input.

IC Role / Device Role / Timing Role: High-side switch controlling energy transfer into output capacitor bank at variable frequency.

Use Value: 900 V V_(BR)DSS provides margin for 305 VAC peak (431 V) plus 20% safety margin, ensuring long-term reliability in outdoor environments.

Use Scenario: -48 V telecom rectifier module with active OR-ing and hot-swap protection.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier switch replacing Schottky diodes in LLC resonant DC/DC stage.

Use Value: 360 ns t_rr and 24 A I_rrm minimize reverse recovery loss and enable clean commutation at 300–500 kHz switching frequencies.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW90R1K2C3FKSA1	Higher R_DS(on) (1.2 Ω), lower Q_g (32 nC), same 900 V rating and PG-TO262 package.	Better suited for lower-current, higher-frequency designs where gate drive loss dominates over conduction loss.	Select when optimizing for <100 kHz switching with <3 A average current and minimal gate driver stress.
STP9NK90ZFP	Zener-protected superjunction MOSFET, 900 V, 7.5 A, R_DS(on) = 0.95 Ω, no JEDEC qualification for industrial use.	Lacks JEDEC qualification and has higher Q_g (65 nC); suitable only for cost-sensitive non-critical consumer applications.	Choose only for legacy designs where Zener gate protection is required and lifetime requirements are ≤5 years.

Compared with IPW90R1K2C3FKSA1 and STP9NK90ZFP, the IPI90R800C3XKSA1 offers the best balance of conduction loss (0.62 Ω), gate drive efficiency (42 nC), and industrial reliability (JEDEC-qualified), making it optimal for 4–6 A, 65–100 kHz SMPS demanding long-term stability.

Availability

IPI90R800C3XKSA1 is available at Aetrix Electronics and suitable for PC silverbox SMPS, industrial AC/DC power supplies, and telecom rectifier modules requiring stable component supply across multi-year production cycles.

Supply support for IPI90R800C3XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The CoolMOS™ C3 product line targets high-efficiency, high-reliability switched-mode power supplies in consumer, computing, and industrial markets, emphasizing low R_DS(on) × Q_g and robust avalanche performance.

FAQ

What is the maximum continuous drain current for IPI90R800C3XKSA1 at 100 °C case temperature?

The maximum continuous drain current is 4.4 A at T_C = 100 °C, derated from 6.9 A at 25 °C per the thermal curve on page 1 of the datasheet. This value accounts for junction temperature limits and package thermal resistance of 1.2 K/W, ensuring safe operation without exceeding 150 °C maximum junction temperature under typical heatsink conditions.

Does IPI90R800C3XKSA1 require a negative gate voltage for reliable turn-off?

No, the device does not require negative gate drive. Its gate threshold voltage is specified between 2.5 V and 3.5 V, and stable turn-off is achieved with 0 V gate-source bias. However, applying –5 V enhances noise immunity in high-dv/dt environments, though it is not mandatory for functional operation per datasheet test conditions.

Can IPI90R800C3XKSA1 be used in a synchronous rectifier configuration?

Yes, its integrated body diode has characterized reverse recovery parameters: t_rr = 360 ns, Q_rr = 5.3 µC, and I_rrm = 24 A. These values support use as a secondary-side switch in forward or LLC converters up to 500 kHz, provided gate timing avoids shoot-through and layout minimizes source inductance to suppress voltage spikes during diode commutation.

What is the recommended gate resistor value for driving IPI90R800C3XKSA1 in a 100 kHz QR flyback design?

A 10 Ω to 22 Ω gate resistor is recommended to balance switching speed and EMI. With 42 nC Q_g, a 15 Ω resistor yields ~630 ns turn-on delay and ~210 ns rise time (per datasheet t_d(on) = 70 ns, t_r = 20 ns at R_G = 50 Ω), minimizing overlap loss while containing dv/dt to <200 V/ns at the drain node.

IPI90R800C3XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 900 V

Current - Continuous Drain (Id) @ 25°C:: 6.9A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 800mOhm @ 4.1A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 460µA

Gate Charge (Qg) (Max) @ Vgs:: 42 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1100 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 104W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO262-3

IPI90R800C3XKSA1 FAQ

1.How can I place an order for IPI90R800C3XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPI90R800C3XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPI90R800C3XKSA1 reliable?

The price and inventory of IPI90R800C3XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPI90R800C3XKSA1 is usually 5 days.

3.What payment methods are accepted for IPI90R800C3XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPI90R800C3XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPI90R800C3XKSA1?

IPI90R800C3XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPI90R800C3XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPI90R800C3XKSA1?

For technical support, including IPI90R800C3XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPI90R800C3XKSA1 requirements.

6.How does Aetrix verify that IPI90R800C3XKSA1 is sourced from the original manufacturer or authorized distributors?

All IPI90R800C3XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPI90R800C3XKSA1 meets industry standards.

7.What is the process for return or replacement of IPI90R800C3XKSA1?

All IPI90R800C3XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPI90R800C3XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPI90R800C3XKSA1 part is unused and in its original packaging.

Return procedure for IPI90R800C3XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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