Infineon Technologies IPL60R199CPAUMA1

Overview

IPL60R199CPAUMA1 from Infineon Technologies is a 600 V, 0.199 Ω R_DS(on) CoolMOS™ CP superjunction MOSFET in ThinPAK 8x8 package, optimized for high-efficiency, high-power-density SMPS in server and adapter applications. It delivers 32 nC total gate charge, 63 A pulsed drain current, and 6.1 µJ output energy at 400 V, enabling compact, thermally efficient designs with smooth switching waveforms.

For engineers reviewing the IPL60R199CPAUMA1 datasheet, IPL60R199CPAUMA1 pinout, IPL60R199CPAUMA1 application, or IPL60R199CPAUMA1 equivalent, key selection criteria include its 0.9 °C/W junction-to-case thermal resistance, 200 A/µs body diode commutation speed, low 72 pF C_oss, and JEDEC-qualified reliability for industrial power conversion.

Technical Context

This device implements a superjunction architecture with optimized charge balance to achieve ultra-low R_DS(on) × Q_g figure-of-merit (FOM), enabling high-frequency operation without sacrificing conduction efficiency. Its gate threshold voltage of 2.5–3.5 V ensures robust noise immunity and stable turn-on behavior under varying drive conditions.

The integrated fast-recovery body diode supports hard-switched and resonant topologies, with confirmed 340 ns reverse recovery time and 5.5 µC Q_rr at 400 V, 9.9 A. The 50 V/ns dv/dt ruggedness rating enables reliable operation in high-dV/dt environments such as LLC and PFC stages.

Key Specifications

Pinout & Package

ThinPAK 8x8 is a leadless surface-mount package measuring 8 mm × 8 mm × 1 mm, offering 64 mm² footprint (vs. 150 mm² for D²PAK) and benchmark low parasitic inductance for high-frequency power stages.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Compared with IPW60R099C6 and IPP60R199C7, IPL60R199CPAUMA1 uniquely balances low R_DS(on), low E_oss, and ultra-compact ThinPAK packaging-making it optimal for space-constrained, high-frequency (>150 kHz) server and adapter platforms requiring JEDEC reliability.

Availability

IPL60R199CPAUMA1 is available at Aetrix Electronics and suitable for server power supplies, USB-C PD adapters, and industrial AC/DC converters requiring stable component supply across multi-year production cycles.

Supply support for IPL60R199CPAUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The CoolMOS™ CP series targets high-efficiency, high-power-density switched-mode power supplies, delivering optimized superjunction MOSFETs for server, telecom, and consumer adapter applications where thermal performance and switching speed are critical.

FAQ

What is the maximum continuous drain current for IPL60R199CPAUMA1 at 100°C case temperature?

The maximum continuous drain current is 10.0 A at T_C = 100°C, as specified in Table 2 of the Rev. 2.4 datasheet. This rating accounts for thermal derating due to junction-to-case thermal resistance (0.9 °C/W) and ambient thermal design constraints. Operation above this current requires active cooling or reduced duty cycle to maintain T_j ≤ 150°C.

Does IPL60R199CPAUMA1 support gate driving with 12 V logic-level signals?

Yes-the gate threshold voltage is 2.5–3.5 V, and full enhancement occurs at V_GS = 10 V, making it compatible with standard 12 V gate drivers. However, the gate plateau voltage is ~5.0 V, so 12 V drive provides sufficient overdrive margin while avoiding excessive gate oxide stress. Driving below 8 V risks incomplete turn-on and increased R_DS(on).

How does the ThinPAK 8x8 package affect PCB layout compared to D²PAK?

ThinPAK 8x8 reduces footprint by 57% (64 mm² vs. 150 mm²) and height by 77% (1 mm vs. 4.4 mm), enabling double-sided component placement and thinner end products. Its drain-pin-down construction requires direct thermal connection to inner-layer copper pours, and its four-terminal configuration mandates separate Kelvin source routing to avoid gate oscillation during high-di/dt switching.

Can IPL60R199CPAUMA1 replace older CoolMOS™ C3 devices in existing designs?

Yes-its pinout, R_DS(on), and gate drive requirements match IPL60R199C3, but IPL60R199CPAUMA1 offers 22% lower E_oss and improved di_F/dt (200 A/µs vs. 150 A/µs). Layout changes are unnecessary, though gate resistor tuning may further optimize switching speed and EMI. No firmware or control-loop modifications are required for drop-in replacement.