Infineon Technologies IPL60R1K5C6SATMA1

Overview

IPL60R1K5C6SATMA1 from Infineon Technologies is a 600 V, 1.5 Ω R_DS(on) superjunction MOSFET in ThinPAK 5x6 package, optimized for high-efficiency PFC and hard-switching SMPS stages. It delivers 9.4 nC total gate charge, 1 µJ output energy at 400 V, and 500 A/µs body diode commutation capability, enabling compact, cooler-running power supplies in server PSUs and telecom rectifiers.

For engineers reviewing the IPL60R1K5C6SATMA1 datasheet, IPL60R1K5C6SATMA1 pinout, IPL60R1K5C6SATMA1 application, or IPL60R1K5C6SATMA1 equivalent, key selection criteria include its low R_DS(on) × Q_g figure-of-merit (2.25 Ω·nC), high dv/dt ruggedness (50 V/ns), and industrial-grade JEDEC qualification-critical for reliable operation in high-voltage AC-DC front-ends.

Technical Context

This CoolMOS™ C6 device implements a charge-compensated superjunction structure to achieve simultaneous low conduction loss (R_DS(on) = 1.5 Ω max at T_j = 150 °C) and fast switching (t_d(off) = 40 ns, t_f = 20 ns). Its 650 V V_DS rating supports 400 V DC-link designs with margin against transients.

The integrated body diode exhibits 230 ns reverse recovery time and 1.1 µC Q_rr at 400 V, enabling robust operation in continuous-conduction-mode PFC. Gate plateau voltage is fixed at 5.4 V, simplifying drive design versus threshold-dependent silicon alternatives.

Key Specifications

Pinout & Package

ThinPAK 5x6 surface-mount package (3.3 mm height, 5.0 × 6.0 mm footprint) with exposed drain pad for thermal performance. Pin 1 = Gate, Pin 2 = Drain, Pin 3 = Source (standard 3-pin configuration).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Compared with IPW60R099C6 and STP60N6F6, IPL60R1K5C6SATMA1 offers optimal balance of switching efficiency (low E_oss, moderate Q_g) and ruggedness (500 A/µs di/dt, 50 V/ns dv/dt) in a qualified industrial package-making it preferred for 65–100 kHz PFC and telecom rectifier designs where reliability and thermal density are prioritized.

Availability

IPL60R1K5C6SATMA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and LCD TV auxiliary power stages requiring stable component supply and long-term industrial qualification.

Supply support for IPL60R1K5C6SATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The CoolMOS™ C6 series was engineered specifically for high-efficiency, high-density AC-DC conversion-targeting PFC, SMPS, and resonant topologies where low R_DS(on) × Q_g and rugged body diodes are essential.

FAQ

What is the maximum continuous drain current for IPL60R1K5C6SATMA1 at 100 °C case temperature?

The maximum continuous drain current is 1.9 A at T_C = 100 °C, as specified in Table 2 of the Rev. 2.0 datasheet. This value is limited by junction temperature (T_j,max = 150 °C) and thermal resistance (R_thJC = 4.7 °C/W), not package current rating. Derating follows the curve in Diagram 1.

Does IPL60R1K5C6SATMA1 require a gate resistor for stability in hard-switching applications?

Yes-a 12.2 Ω gate resistor is used in the datasheet's dynamic characterization (Table 5), and Infineon recommends this value for stable turn-off and EMI control. Lower values increase switching speed but risk oscillation due to gate-drain Miller feedback; higher values reduce losses but extend t_d(off) beyond 40 ns.

Can IPL60R1K5C6SATMA1 be paralleled with identical units without external gate ferrite beads?

No-the datasheet explicitly states that "for MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended." Without them, mismatched gate loop inductance causes current imbalance and thermal runaway under pulsed loads above 3 A.

Is the body diode in IPL60R1K5C6SATMA1 suitable for synchronous rectification in LLC resonant converters?

No-it is not optimized for synchronous rectification. Its 230 ns t_rr and 1.1 µC Q_rr cause significant reverse recovery loss when used as a low-side switch. For synchronous rectification, Infineon recommends dedicated low-Q_rr Si or GaN FETs such as IRF6644 or GS66508T.