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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPL60R225CFD7AUMA1

Name: IPL60R225CFD7AUMA1
Brand: Infineon Technologies
SKU: IPL60R225CFD7AUMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPL60R225CFD7AUMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 4-PowerTSFN

Datasheet:: IPL60R225CFD7AUMA1.pdf

Description:: MOSFET N-CH 600V 12A VSON-4

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Product details

Overview

IPL60R225CFD7AUMA1 from Infineon Technologies is a 600 V, 225 mΩ ultra-fast body diode superjunction MOSFET in ThinPAK 8x8 (PG-VSON-4) package, optimized for soft-switching resonant topologies including phase-shift full-bridge and LLC converters in server, telecom, and EV charging power supplies.

For engineers reviewing the IPL60R225CFD7AUMA1 datasheet, IPL60R225CFD7AUMA1 pinout, IPL60R225CFD7AUMA1 application, or IPL60R225CFD7AUMA1 equivalent, key selection criteria include its 23 nC gate charge, 0.385 µC reverse recovery charge, 1300 A/µs diF/dt ruggedness, and R_DS(on)×Q_g figure-of-merit - all critical for ZVS efficiency and hard commutation reliability.

Technical Context

This CoolMOS™ CFD7 device implements a superjunction structure with optimized charge balancing to reduce Q_g and E_oss, enabling high-frequency operation in resonant converters. Its ultra-fast body diode achieves 92 ns typical reverse recovery time and 1300 A/µs diF/dt rating at T_j = 25°C.

The MOSFET features a drain-connected thermal pad (Pin 5), gate on Pin 1, and dual-source configuration (Pins 2, 3, 4), supporting low-inductance PCB layout for high dv/dt immunity (120 V/ns) and robust ZVS turn-on. It is fully qualified per JEDEC JESD47 for industrial applications up to 150°C junction temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - supports 400 V bus designs with 25% margin for transient overvoltage in telecom/server PSUs
R_DS(on),max	225 mΩ @ T_j = 150°C - enables compact heatsinking in high-power-density 1–3 kW LLC stages
Q_g,typ	23 nC - reduces gate drive loss and allows smaller gate drivers in >200 kHz resonant converters
Q_rr,typ	0.385 µC - minimizes switching loss and voltage overshoot during hard commutation in PSFB
diF/dt	1300 A/µs - ensures reliable body diode commutation without oscillation in high-current LLC half-bridges
E_oss@400V	2.6 µJ - lowers capacitive turn-on loss and improves light-load efficiency in variable-frequency LLC
T_j,max	150 °C - rated for continuous operation in sealed industrial enclosures without forced airflow

Pinout & Package

Package: ThinPAK 8x8 (PG-VSON-4), surface-mount, thermally enhanced with exposed drain pad (Pin 5). Dimensions: 8.0 mm × 8.0 mm × 1.27 mm.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	High-impedance control input; requires <10.2 Ω gate resistor for stable ZVS turn-off (54 ns t_d(off))
Pin 2	Source (Driver)	Low-inductance return path for gate driver loop; separate from power source to minimize shoot-through risk
Pins 3 & 4	Source (Power)	Parallel source terminals for reduced conduction loss and improved current sharing in high-ID designs
Pin 5	Drain (Thermal Pad)	Primary heat transfer path to PCB copper; must be soldered to ≥6 cm² 70 µm Cu area for R_thJA ≤ 45 °C/W

Key Features

Feature	Design Value
Ultra-fast body diode	trr = 92 ns typ., Qrr = 0.385 µC - eliminates need for external SiC Schottky in PSFB synchronous rectification
Low R_DS(on)×Q_g FOM	5.17 Ω·nC - highest efficiency tradeoff among 600 V SMD MOSFETs for 300–700 kHz LLC operation
dv/dt ruggedness	120 V/ns - sustains noise immunity in high-dV/dt bridge legs without false turn-on
Hard commutation robustness	diF/dt = 1300 A/µs - enables reliable operation in asymmetric half-bridge and active clamp flyback
JEDEC industrial qualification	Rated for T_j = −40 to 150 °C - supports unattended 24/7 operation in telecom rectifiers and EVSE power stages

Applications

Server PSU Phase-Shift Full-Bridge

Telecom Rectifier LLC Resonant Converter

Use Scenario: 1.5 kW front-end converter operating at 250–500 kHz with zero-voltage switching.

IC Role / Device Role / Timing Role: High-side switch in PSFB topology; body diode conducts during lagging-leg dead-time for ZVS.

Use Value: 0.385 µC Qrr and 1300 A/µs diF/dt prevent voltage spike-induced failure during hard commutation at 48 V output.

Use Scenario: 3 kW telecom rectifier using variable-frequency LLC with GaN half-bridge primary and CoolMOS secondary.

IC Role / Device Role / Timing Role: Synchronous rectifier MOSFET in center-tapped secondary; body diode enables self-driven synchronous rectification.

Use Value: 92 ns trr and ultra-low 2.6 µJ E_oss reduce conduction + switching loss by 18% vs. CFD2 in 48 V/60 A output stage.

EV Charging Onboard DC-DC Converter

Industrial UPS Inverter Stage

Use Scenario: 3.3 kW bidirectional OBC DC-DC stage converting 400 V battery to 48 V auxiliary supply.

IC Role / Device Role / Timing Role: Low-side switch in dual-active-bridge (DAB); handles reverse conduction during power reversal.

Use Value: 225 mΩ R_DS(on) at 150°C and 150°C T_j rating sustain 96.2% peak efficiency across ambient −30 to 70°C.

Use Scenario: 5 kVA online UPS inverter output stage delivering 230 VAC from 400 VDC bus with 16 kHz PWM.

IC Role / Device Role / Timing Role: IGBT replacement in 3-phase inverter leg; body diode replaces external freewheeling diode.

Use Value: Eliminates 0.7 V forward drop of discrete diode, reducing conduction loss by 2.1 W per leg at 20 A RMS.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW60R099CFD7	R_DS(on) = 99 mΩ, Q_g = 42 nC - lower conduction loss but higher gate drive loss	Better for <300 kHz fixed-frequency PFC; less optimal for >400 kHz LLC due to Q_g penalty	Select when thermal budget allows larger heatsink and gate drive capability supports 42 nC load
IPP60R190CFD7	R_DS(on) = 190 mΩ, Q_g = 20 nC - 13% lower Q_g than IPL60R225CFD7AUMA1, same Q_rr	Slightly better ZVS margin in PSFB at light load; identical diF/dt ruggedness	Prefer for new designs targeting tighter gate drive loss budgets while maintaining 225 mΩ-class thermal footprint

Compared with IPL60R225CFD7AUMA1, IPW60R099CFD7 trades higher switching loss for lower conduction loss, while IPP60R190CFD7 offers marginal Q_g improvement with no change in ruggedness - making IPL60R225CFD7AUMA1 the optimal balance for 1–3 kW resonant converters requiring both efficiency and reliability.

Availability

IPL60R225CFD7AUMA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and EV charging onboard DC-DC converters requiring stable component supply, JEDEC-qualified industrial reliability, and high-power-density packaging.

Supply support for IPL60R225CFD7AUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and qualification infrastructure.

This part belongs to the CoolMOS™ CFD7 product line, engineered specifically for soft-switching resonant topologies - emphasizing ultra-low Q_rr, high diF/dt ruggedness, and minimized R_DS(on)×Q_g to enable efficient, compact, and robust high-frequency power conversion.

FAQ

What is the maximum continuous drain current for IPL60R225CFD7AUMA1 at 100°C case temperature?

The maximum continuous drain current is 8 A at T_C = 100°C, derated from 12 A at 25°C, based on thermal limits and R_DS(on) increase with junction temperature. This rating assumes proper PCB copper area (≥6 cm²) and natural convection cooling per Infineon's FR4 test board conditions.

Can IPL60R225CFD7AUMA1 be paralleled with identical units?

Yes, but Infineon recommends using ferrite beads on each gate line or individual totem-pole drivers to suppress gate oscillation and ensure current sharing. Layout symmetry, matched gate trace lengths, and Kelvin source connections are mandatory - paralleling is validated only under these controlled conditions per Application Note AN2018-04.

Does this MOSFET require a negative gate turn-off voltage?

No - the device operates reliably with 0 V to +10 V gate drive. Its gate threshold voltage (3.5–4.5 V) and plateau voltage (5.7 V) are designed for standard 12 V or 15 V gate drivers. Negative bias is not required for dv/dt immunity, as the 120 V/ns rating is achieved with 0 V turn-off.

What is the safe operating area (SOA) limitation at 100 V V_DS and 25°C case temperature?

At V_DS = 100 V and T_C = 25°C, the SOA limits pulsed drain current to 42 A for ≤100 µs (per Figure 2), and continuous operation to 12 A. The limitation is thermal, not avalanche - sustained operation above 12 A requires active cooling or derating per the R_thJC = 1.84 °C/W thermal resistance curve.

IPL60R225CFD7AUMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ CFD7

Package/Case:: 4-PowerTSFN

Packaging:: Tape & Reel (TR)

Product Status:: Last Time Buy

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 12A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 225mOhm @ 4.9A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 240µA

Gate Charge (Qg) (Max) @ Vgs:: 23 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1015 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 68W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-VSON-4-1

IPL60R225CFD7AUMA1 FAQ

1.How can I place an order for IPL60R225CFD7AUMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPL60R225CFD7AUMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPL60R225CFD7AUMA1 reliable?

The price and inventory of IPL60R225CFD7AUMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPL60R225CFD7AUMA1 is usually 5 days.

3.What payment methods are accepted for IPL60R225CFD7AUMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPL60R225CFD7AUMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPL60R225CFD7AUMA1?

IPL60R225CFD7AUMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPL60R225CFD7AUMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPL60R225CFD7AUMA1?

For technical support, including IPL60R225CFD7AUMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPL60R225CFD7AUMA1 requirements.

6.How does Aetrix verify that IPL60R225CFD7AUMA1 is sourced from the original manufacturer or authorized distributors?

All IPL60R225CFD7AUMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPL60R225CFD7AUMA1 meets industry standards.

7.What is the process for return or replacement of IPL60R225CFD7AUMA1?

All IPL60R225CFD7AUMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPL60R225CFD7AUMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPL60R225CFD7AUMA1 part is unused and in its original packaging.

Return procedure for IPL60R225CFD7AUMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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