Infineon Technologies IPL60R650P6SATMA1

Overview

IPL60R650P6SATMA1 from Infineon Technologies is a 600 V, 0.65 Ω R_DS(on) superjunction N-channel power MOSFET in ThinPAK 5x6 package, optimized for high-efficiency PFC and hard/resonant PWM stages in AC-DC power supplies. It delivers 12 nC typical gate charge, 1.8 µJ E_oss at 400 V, and 500 A/µs body diode commutation speed for industrial-grade SMPS designs.

For engineers reviewing the IPL60R650P6SATMA1 datasheet, IPL60R650P6SATMA1 pinout, IPL60R650P6SATMA1 application, or IPL60R650P6SATMA1 equivalent, key selection criteria include conduction loss (R_DS(on) ≤ 0.65 Ω @ T_j = 150 °C), switching efficiency (Q_g = 12 nC, E_oss = 1.8 µJ), ruggedness (dV/dt = 100 V/ns, dif/dt = 500 A/µs), and industrial temperature rating (T_j = –40 to +150 °C).

Technical Context

This CoolMOS™ P6 device implements a superjunction cell structure with optimized charge balancing to achieve ultra-low FOM (R_DS(on) × Q_g) of ~7.8 Ω·nC and energy-related output capacitance (C_o(er)) of 23 pF at 480 V. Its gate plateau voltage is 6.1 V, enabling stable turn-on under high dv/dt conditions.

The MOSFET supports both unidirectional hard-switching and bidirectional resonant topologies due to its high commutation ruggedness (E_AS = 133 mJ, I_AR = 1.3 A) and fast, soft-recovery body diode (t_rr = 196 ns, Q_rr = 1.7 µC). It is rated for continuous operation up to T_j = 150 °C with R_thJC = 2.2 °C/W.

Key Specifications

Pinout & Package

ThinPAK 5x6 surface-mount package with exposed drain pad for enhanced thermal performance and compact board layout. Pin 1 (Source), Pin 2 (Gate), Pin 3 (Drain), Pin 4 (Drain), Pin 5 (Drain), Pin 6 (Drain) - all drain pins are internally connected to the thermal pad.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with IPL60R650P6SATMA1, IPW60R099P6 offers lower R_DS(on) at the cost of higher Q_g and TO-247 thermal/mechanical overhead, while IPP60R099P7 delivers superior dynamic performance in the same ThinPAK footprint-making it a drop-in upgrade path where available.

Availability

IPL60R650P6SATMA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, LCD TV backlight inverters, and UPS inverter stages requiring stable component supply, industrial temperature compliance, and long-term production continuity.

Supply support for IPL60R650P6SATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with leadership in silicon and wide-bandgap technologies.

The CoolMOS™ P6 series was engineered specifically for high-efficiency, high-power-density AC-DC conversion in industrial and computing power supplies-emphasizing low FOM, ruggedness, and ease of drive without external snubbers or gate damping.

FAQ

What is the maximum continuous drain current for IPL60R650P6SATMA1 at 100 °C case temperature?

The maximum continuous drain current is 4.2 A at T_C = 100 °C, as specified in Table 2 of the Rev. 2.0 datasheet. This rating accounts for thermal derating and ensures safe operation within the 150 °C junction limit when mounted on a 40 mm × 40 mm FR4 PCB with 6 cm² copper area for drain cooling.

Does IPL60R650P6SATMA1 require a gate resistor for stability in hard-switching applications?

Yes-a gate resistor of 6.8 Ω is used in the datasheet's dynamic characterization (Table 5), and application guidance recommends ferrite beads or separate totem-pole drivers when paralleling devices to suppress gate oscillation caused by high di/dt and parasitic inductance in the gate loop.

How does the body diode performance compare to standard silicon MOSFETs?

Its body diode achieves 500 A/µs commutation speed and 196 ns reverse recovery time at 400 V, significantly faster and softer than conventional planar MOSFETs. This reduces voltage spikes and EMI in bridge configurations, eliminating need for external Schottky catch diodes in many PFC and resonant designs.

Is IPL60R650P6SATMA1 suitable for use in automotive applications?

No-it is qualified for industrial grade per JEDEC J-STD-020 and JESD22, not AEC-Q101. While it operates from –40 to +150 °C, it lacks automotive-specific stress testing (e.g., HTGB, uHAST), making it unsuitable for under-hood or safety-critical vehicle systems without additional qualification.