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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPL65R065CFD7AUMA1

Name: IPL65R065CFD7AUMA1
Brand: Infineon Technologies
SKU: IPL65R065CFD7AUMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPL65R065CFD7AUMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 4-PowerTSFN

Datasheet:: IPL65R065CFD7AUMA1.pdf

Description:: HIGH POWER_NEW

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPL65R065CFD7AUMA1 from Infineon is a 650 V, 65 mΩ ultra-fast body diode Superjunction MOSFET in ThinPAK 8x8 package, optimized for zero-voltage switching (ZVS) topologies including LLC and phase-shift full-bridge converters in server power supplies, telecom rectifiers, EV charging stations, and solar inverters.

For engineers reviewing the IPL65R065CFD7AUMA1 datasheet, IPL65R065CFD7AUMA1 pinout, IPL65R065CFD7AUMA1 application, or IPL65R065CFD7AUMA1 equivalent, key selection criteria include R_DS(on) temperature stability, di_F/dt rating of 1300 A/µs, E_oss of 9.5 µJ at 400 V, and gate charge Q_g of 68 nC - all critical for high-efficiency soft-switching design validation.

Technical Context

This CoolMOS™ CFD7 device implements a silicon-based superjunction structure with integrated fast-recovery body diode (t_rr = 156–234 ns, Q_rr = 0.86–1.72 µC), enabling robust hard commutation without external snubbers. Its low C_oss-related energy (E_oss = 9.5 µJ) and reduced Q_gd/Q_g ratio support precise ZVS timing control in resonant converters.

The MOSFET features a dedicated Driver Source (Pin 2) and Power Source (Pins 3,4) configuration to minimize source inductance asymmetry during paralleling. Gate threshold voltage (V_GS(th) = 3.5–4.5 V) and plateau voltage (V_plateau = 5.7 V) are tightly specified to ensure stable turn-on behavior across industrial temperature range (−40 °C to 150 °C).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	650 V - supports 400 V bus designs with 25% overvoltage margin for transient surges in telecom and EV charging applications
R_DS(on) max @ 150°C	65 mΩ - enables low conduction loss at full load while maintaining thermal stability in compact 1U server PSUs
Q_g typ	68 nC - determines gate drive power requirement and switching speed in 100–300 kHz LLC controllers
E_oss @ 400 V	9.5 µJ - directly defines turn-off energy loss and ZVS boundary condition in phase-shifted full-bridge topologies
di_F/dt max	1300 A/µs - guarantees reliable body diode commutation under hard-switching stress in asymmetric half-bridge configurations
t_rr typ	156 ns - limits reverse recovery overshoot and EMI generation during synchronous rectification transitions
R_thJC	0.64 °C/W - allows direct heatsink mounting for thermal management in high-power-density 3–5 kW industrial SMPS

Pinout & Package

Package: ThinPAK 8x8 (PG-VSON-4), surface-mount, thermally enhanced with exposed drain pad. Pin 1: Gate; Pin 2: Driver Source; Pins 3 & 4: Power Source (common-source connection); Drain connected to bottom thermal pad.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	Control input for MOSFET channel; requires low-inductance gate driver trace routing to minimize ringing during 121 ns t_d(off)
Pin 2	Driver Source	Reference node for gate driver IC feedback; separates gate loop from high-current source return to suppress common-mode noise
Pins 3 & 4	Power Source	High-current source return path; must be routed with wide copper pour to limit voltage drop during 139 A I_D,pulse
Drain (exposed pad)	Drain	Main high-side power terminal and primary thermal interface; soldered directly to PCB copper for R_thJC = 0.64 °C/W performance

Key Features

Feature	Design Value
Ultra-fast body diode	di_F/dt = 1300 A/µs and t_rr ≤ 234 ns enable reliable operation in hard-commutated PFC and asymmetrical bridge legs without external diodes
Low R_DS(on) temperature coefficient	R_DS(on) increases only ~1.8× from 25°C to 150°C - reduces thermal runaway risk in paralleled configurations
Optimized E_oss/Q_g ratio	9.5 µJ / 68 nC = 0.14 V - ensures ZVS capability down to light loads in LLC converters operating at 200–500 kHz
JEDEC-qualified industrial reliability	Qualified per JESD47 and JESD22-A108 for 150°C T_j continuous operation - validated for 10+ year field life in telecom rectifiers
Source pin segregation	Dedicated Driver Source (Pin 2) and Power Source (Pins 3,4) prevent gate oscillation and current imbalance when paralleling multiple devices

Applications

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switch in 3.3 kW LLC resonant converter for 1U rack-mounted server PSU.

IC Role / Device Role / Timing Role: High-side ZVS-switching MOSFET operating at 250 kHz with 400 V DC bus and 12 V output.

Use Value: 9.5 µJ E_oss enables >96% full-load efficiency and <150 mW no-load consumption due to low capacitive turn-off loss.

Use Scenario: Active clamp forward or phase-shift full-bridge switch in −48 V telecom rectifier with 380 V PFC front-end.

IC Role / Device Role / Timing Role: Main switching device handling 139 A pulsed drain current during burst-mode light-load operation.

Use Value: 1300 A/µs di_F/dt rating eliminates need for external snubbers during hard commutation at 100 kHz switching frequency.

EV Charging Station

Solar Inverter

Use Scenario: Secondary-side synchronous rectifier or primary-side switch in 11 kW on-board charger using dual-phase LLC topology.

IC Role / Device Role / Timing Role: Fast-recovery body diode conducts reverse current during ZVS dead-time in bidirectional AC/DC conversion.

Use Value: 156 ns t_rr minimizes reverse recovery losses and EMI, supporting CISPR-22 Class B compliance without added filtering.

Use Scenario: DC-link switch in 5 kW string inverter with unidirectional boost + H-bridge inversion stages.

IC Role / Device Role / Timing Role: High-voltage switching element rated for 650 V blocking and 33 A continuous current at 100°C case temperature.

Use Value: 0.64 °C/W R_thJC enables direct heatsink mounting on aluminum chassis, reducing thermal interface layers and system cost.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW65R041CFD7	Lower R_DS(on) (41 mΩ), higher Q_g (95 nC), same 650 V rating and CFD7 technology	Better conduction loss but increased gate drive loss and E_oss (13.2 µJ) limits ZVS range at light loads	Select when full-load efficiency dominates design priority and gate drive capability supports 95 nC charge
IPP65R095C7	CFD2-generation device; higher R_DS(on) (95 mΩ), lower Q_g (42 nC), no di_F/dt spec beyond 600 A/µs	Reduced hard commutation ruggedness and higher conduction loss limit use in high-frequency ZVS topologies	Acceptable for fixed-frequency hard-switched PFC where cost sensitivity outweighs efficiency targets

Compared with IPW65R041CFD7 and IPP65R095C7, IPL65R065CFD7AUMA1 delivers optimal balance of conduction loss (65 mΩ), switching loss (68 nC, 9.5 µJ), and diode ruggedness (1300 A/µs), making it the preferred choice for next-generation 200–500 kHz resonant converters requiring both efficiency and reliability.

Availability

IPL65R065CFD7AUMA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and EV charging stations requiring stable component supply, JEDEC-qualified industrial reliability, and consistent parametric performance across production lots.

Supply support for IPL65R065CFD7AUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and qualification infrastructure.

This device belongs to the CoolMOS™ CFD7 superjunction MOSFET product line, engineered specifically for high-efficiency, high-power-density resonant switching topologies such as LLC and phase-shift full-bridge converters in industrial and telecom power systems.

FAQ

Can IPL65R065CFD7AUMA1 replace IPL65R095C7 in an existing design?

No direct replacement is recommended without re-evaluation. IPL65R065CFD7AUMA1 has lower R_DS(on) (65 mΩ vs. 95 mΩ) and higher Q_g (68 nC vs. ~42 nC), altering gate drive requirements and ZVS behavior. Its faster body diode (1300 A/µs vs. ~600 A/µs) also changes commutation stress. Layout, driver strength, and dead-time settings must be verified.

What is the maximum continuous drain current at 100°C case temperature?

The maximum continuous drain current is 23 A at T_C = 100°C, as specified in Table 2 of the datasheet. This rating assumes proper PCB copper area (6 cm² drain pad on 40 mm × 40 mm FR4 board) and ambient cooling conditions. Exceeding this value risks junction temperature exceeding 150°C.

Is the Driver Source (Pin 2) interchangeable with Power Source (Pins 3,4)?

No - the source pins are not interchangeable. Pin 2 (Driver Source) is electrically isolated from Pins 3 and 4 (Power Source) internally. Swapping them causes gate drive loop instability, inaccurate current sensing, and potential device failure. The datasheet explicitly warns against exchange due to functional separation.

Does IPL65R065CFD7AUMA1 support paralleling, and what layout guidance applies?

Yes, it supports paralleling with proper layout: place gate resistors on the Driver Source (Pin 2), not the Gate (Pin 1), to equalize gate loop inductance; use symmetrical, low-inductance source and drain traces; and ensure matched thermal paths via identical copper pour area under each device's drain pad.

IPL65R065CFD7AUMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ CFD7

Package/Case:: 4-PowerTSFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 33A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 65mOhm @ 16.4A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 860µA

Gate Charge (Qg) (Max) @ Vgs:: 68 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3288 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 195W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-VSON-4-1

IPL65R065CFD7AUMA1 FAQ

1.How can I place an order for IPL65R065CFD7AUMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPL65R065CFD7AUMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPL65R065CFD7AUMA1 reliable?

The price and inventory of IPL65R065CFD7AUMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPL65R065CFD7AUMA1 is usually 5 days.

3.What payment methods are accepted for IPL65R065CFD7AUMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPL65R065CFD7AUMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPL65R065CFD7AUMA1?

IPL65R065CFD7AUMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPL65R065CFD7AUMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPL65R065CFD7AUMA1?

For technical support, including IPL65R065CFD7AUMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPL65R065CFD7AUMA1 requirements.

6.How does Aetrix verify that IPL65R065CFD7AUMA1 is sourced from the original manufacturer or authorized distributors?

All IPL65R065CFD7AUMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPL65R065CFD7AUMA1 meets industry standards.

7.What is the process for return or replacement of IPL65R065CFD7AUMA1?

All IPL65R065CFD7AUMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPL65R065CFD7AUMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPL65R065CFD7AUMA1 part is unused and in its original packaging.

Return procedure for IPL65R065CFD7AUMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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