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Infineon Technologies IPL65R130CFD7AUMA1

Part No.:
IPL65R130CFD7AUMA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
4-PowerTSFN
Datasheet:
AetrixIPL65R130CFD7AUMA1.pdf
Description:
COOLMOS CFD7 SUPERJUNCTION MOSFE
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,362

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Product details

Overview

IPL65R130CFD7AUMA1 from Infineon is a 650 V, 130 mΩ ultra-fast body diode Superjunction MOSFET in ThinPAK 8x8 (PG-VSON-4) package, optimized for ZVS and LLC resonant topologies. It delivers 72 A pulsed drain current, 36 nC total gate charge, and 1300 A/µs diode commutation speed-enabling high-efficiency server power supplies, telecom rectifiers, and EV charging stages.

For engineers reviewing the IPL65R130CFD7AUMA1 datasheet, IPL65R130CFD7AUMA1 pinout, IPL65R130CFD7AUMA1 application, or IPL65R130CFD7AUMA1 equivalent, key selection criteria include hard commutation ruggedness (1300 A/µs diF/dt), low RDS(on) temperature coefficient, Eoss of 5.1 µJ at 400 V, and validated JEDEC industrial qualification.

Technical Context

This CoolMOS™ CFD7 device integrates an ultra-fast body diode with 104–156 ns reverse recovery time and 0.52–1.04 µC Qrr, enabling reliable zero-voltage switching without external snubbers. Its 64 pF energy-related output capacitance (Co(er)) and 661 pF time-related Co(tr) support precise timing control in phase-shift full-bridge converters.

The MOSFET features a 5.7 V gate plateau voltage and 8.5 Ω intrinsic gate resistance, ensuring stable drive behavior under high dv/dt (120 V/ns) and robust operation up to 150 °C junction temperature. Its 0.98 °C/W RthJC enables high-power-density thermal design on minimal PCB copper area.

Key Specifications

Parameter Value and Actual Design Meaning
VDS max 650 V - rated for 400 V bus applications with 1.6× safety margin against transient overvoltage
RDS(on) max @ 150°C 130 mΩ - stable conduction loss across industrial temperature range, enabling compact heatsink design
Qg typ 36 nC - low gate drive energy reduces controller IC loading and improves switching efficiency at 100–300 kHz
Eoss @ 400 V 5.1 µJ - minimized capacitive turn-on loss critical for high-frequency LLC primary-side switching
diF/dt max 1300 A/µs - supports hard commutation in asymmetric half-bridge and phase-shifted topologies without oscillation
Tj max 150 °C - fully qualified per JEDEC JESD47 for continuous industrial operation
RthJC 0.98 °C/W - enables >100 W dissipation with simple single-layer copper pad, no thermal vias required

Pinout & Package

ThinPAK 8x8 (PG-VSON-4) surface-mount package with exposed drain pad for thermal performance. Pin 1: Gate; Pin 2: Driver Source; Pin 3 & 4: Source (common); Drain connected to bottom thermal pad.

Pin/Terminal Circuit Role Design Meaning
Pin 1 Gate Control input requiring 10 V drive; 8.5 Ω internal RG limits ringing during fast edge transitions
Pin 2 Driver Source Reference node for gate driver return path; mandatory for stable switching in paralleled configurations
Pins 3 & 4 Source Main current return path; not interchangeable with Pin 2-swap causes gate loop instability and shoot-through risk
Drain (exposed pad) High-side power terminal Thermally coupled to PCB copper; requires solder mask defined 6 cm² copper area for 35–45 °C/W RthJA

Key Features

Feature Design Value
Ultra-fast body diode trr = 104–156 ns, Qrr = 0.52–1.04 µC - eliminates need for external anti-parallel SiC diodes in ZVS designs
Hard commutation ruggedness diF/dt = 1300 A/µs - withstands abrupt current reversal in phase-shift full-bridge without failure
Low RDS(on) tempco RDS(on) increases only ~1.8× from 25°C to 150°C - maintains predictable conduction loss in thermally stressed environments
Reduced Eoss 5.1 µJ @ 400 V - cuts turn-on switching loss by >30% vs. prior CFD2 generation in 200–500 kHz LLC operation
JEDEC industrial qualification Qualified per JESD47 - ensures long-term reliability in server PSUs, telecom rectifiers, and EVSE power stages

Applications

Server Power Supply Telecom Rectifier

Use Scenario: Primary-side switch in 3 kW LLC resonant DC-DC converter for AI server rack power distribution.

IC Role / Device Role / Timing Role: High-side ZVS-switching MOSFET operating at 250 kHz with 400 V bus and 12 V output.

Use Value: 1300 A/µs diF/dt and 5.1 µJ Eoss enable >97% peak efficiency while eliminating snubber losses.

Use Scenario: Active clamp forward or phase-shift full-bridge switch in 48 V telecom rectifier with 380 V PFC front-end.

IC Role / Device Role / Timing Role: Main switching element handling 72 A pulsed current during ZVS transitions.

Use Value: 130 mΩ RDS(on) at 125°C sustains full-load efficiency >96% without derating at 60°C ambient.

EV Charging Station Solar Inverter Auxiliary Stage

Use Scenario: Isolated DC-DC stage in 22 kW AC-to-DC on-board charger (OBC) for Level 2 EV charging.

IC Role / Device Role / Timing Role: Resonant tank switch in bidirectional CLLC topology operating at 200–300 kHz.

Use Value: Ultra-fast body diode (104 ns trr) enables clean reverse conduction during bidirectional power flow.

Use Scenario: Auxiliary SMPS supply powering gate drivers and control logic in 10 kW string solar inverter.

IC Role / Device Role / Timing Role: Primary-side switch in 650 V flyback or active-clamp forward converter.

Use Value: 700 V VDS@Tj,max provides 150 V headroom above 400 V PV string voltage, preventing avalanche stress.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage resonant switching applications.

Alternative Part Technical Difference Application Difference Selection Advice
IPW65R130CFD7XKSA1 TO-247-3L package; higher RthJC (0.55 °C/W) but same die and electrical specs Better suited for forced-air-cooled industrial UPS where mechanical mounting dominates thermal path Select when board space allows TO-247 and thermal interface material can be applied directly to case
IPP65R130CFD7XKSA1 TO-220FP package; 127 W Ptot rating limited by RthJC = 0.75 °C/W and plastic isolation Targeted at cost-sensitive 1–2 kW offline SMPS where lower power density is acceptable Choose for legacy through-hole assembly or when reflow compatibility is not required

Compared with IPW65R130CFD7XKSA1 and IPP65R130CFD7XKSA1, IPL65R130CFD7AUMA1 offers superior power density via ThinPAK's 0.98 °C/W RthJC and SMD manufacturability-critical for high-volume server and telecom modules where PCB real estate and automated assembly drive BOM decisions.

Availability

IPL65R130CFD7AUMA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and EV charging stations requiring stable component supply, JEDEC-qualified reliability, and high-frequency ZVS capability.

Supply support for IPL65R130CFD7AUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive MCUs, and industrial sensors, with global manufacturing and quality systems certified to ISO 9001 and IATF 16949.

This part belongs to the CoolMOS™ CFD7 Superjunction MOSFET product line, engineered specifically for soft-switching industrial power conversion-emphasizing ultra-fast body diode performance, hard commutation robustness, and high power density in resonant topologies.

FAQ

What is the maximum recommended gate resistor value for stable switching?

The datasheet specifies a 10.2 Ω external gate resistor for characterization. For stable operation, use 5–15 Ω depending on layout parasitics; values below 5 Ω increase risk of gate oscillation due to 8.5 Ω internal RG, while >15 Ω degrades switching speed and increases losses. Always verify with oscilloscope measurement of VGS ringing.

Can Pins 3 and 4 be used interchangeably with Pin 2 (Driver Source)?

No-Pins 3 and 4 are main source terminals carrying full load current, while Pin 2 is the dedicated Driver Source for gate driver return. Swapping them introduces ground loop imbalance, causing erratic switching, increased EMI, and potential shoot-through. The datasheet explicitly warns that exchange may lead to malfunction.

Is this MOSFET suitable for hard-switched PFC boost stages?

No-it is optimized for soft-switching topologies (LLC, phase-shift full-bridge) where its ultra-fast body diode and low Eoss deliver benefit. In hard-switched PFC, its 130 mΩ RDS(on) and moderate Ciss (1694 pF) result in higher conduction and switching losses versus dedicated PFC MOSFETs like the IPA65R115CFD7.

What PCB layout guidance applies to the exposed drain pad?

The drain pad must connect to ≥6 cm² of 70 µm thick copper on a 40 mm × 40 mm FR4 board, vertically mounted without airflow. Use thermal vias (≥8× 0.3 mm diameter) under the pad if multilayer routing is needed, but avoid splitting the copper area-interruptions raise RthJA beyond the specified 35–45 °C/W range.

IPL65R130CFD7AUMA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
CoolMOS™
Package/Case:
4-PowerTSFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
650 V
Current - Continuous Drain (Id) @ 25°C:
21A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
130mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id:
4.5V @ 420µA
Gate Charge (Qg) (Max) @ Vgs:
36 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1694 pF @ 400 V
FET Feature:
-
Power Dissipation (Max):
127W (Tc)
Operating Temperature:
-40°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-VSON-4

IPL65R130CFD7AUMA1 FAQ

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Please submit a Request for Quotation (RFQ) for IPL65R130CFD7AUMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

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The price and inventory of IPL65R130CFD7AUMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPL65R130CFD7AUMA1 is usually 5 days.

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IPL65R130CFD7AUMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

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5.How can I obtain technical support or documentation for IPL65R130CFD7AUMA1?

For technical support, including IPL65R130CFD7AUMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPL65R130CFD7AUMA1 requirements.

6.How does Aetrix verify that IPL65R130CFD7AUMA1 is sourced from the original manufacturer or authorized distributors?

All IPL65R130CFD7AUMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPL65R130CFD7AUMA1 meets industry standards.

7.What is the process for return or replacement of IPL65R130CFD7AUMA1?

All IPL65R130CFD7AUMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPL65R130CFD7AUMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPL65R130CFD7AUMA1 part is unused and in its original packaging.

Return procedure for IPL65R130CFD7AUMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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