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Infineon Technologies IPL65R165CFDAUMA2

Part No.:
IPL65R165CFDAUMA2
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
4-PowerTSFN
Datasheet:
AetrixIPL65R165CFDAUMA2.pdf
Description:
MOSFET N-CH 650V 21.3A 4VSON
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:7,242

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Product details

Overview

IPL65R165CFDAUMA2 from Infineon Technologies is a 650 V, 21.3 A (TC = 25 °C) N-channel superjunction MOSFET in ThinPAK 8x8 package, featuring RDS(on) = 0.165 Ω (max), Qg = 86 nC (typ), and ultra-fast body diode with dIF/dt = 900 A/µs - engineered for high-efficiency resonant LLC and PFC stages in server power supplies and telecom rectifiers.

For engineers reviewing the IPL65R165CFDAUMA2 datasheet, IPL65R165CFDAUMA2 pinout, IPL65R165CFDAUMA2 application, or IPL65R165CFDAUMA2 equivalent, key selection criteria include commutation ruggedness (dIF/dt = 900 A/µs), low Eoss (6.8 µJ @ 400 V), fast trr (140 ns), and industrial-grade JEDEC qualification - all critical for zero-voltage switching reliability and thermal stability in high-density SMPS designs.

Technical Context

This CoolMOS™ CFD2 device implements a charge-compensated superjunction structure enabling simultaneous reduction of conduction (RDS(on) × Qg FOM = 14.2 Ω·nC) and switching losses (Eoss = 6.8 µJ @ 400 V). Its optimized gate charge profile (Qgd/Qg = 55%) supports clean hard-switching transitions with minimal voltage overshoot.

The integrated ultra-fast body diode delivers 140 ns reverse recovery time and 8.8 A peak recovery current under 400 V/14 A conditions, eliminating need for external SiC Schottky catch diodes in half-bridge resonant topologies. Drain-source avalanche rating (EAS = 614 mJ) ensures single-pulse robustness in overvoltage events.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 650 V - rated blocking voltage for primary-side switching in 400 V DC-link telecom/server PSUs
RDS(on) 0.165 Ω (max @ Tj = 150 °C) - enables <2.3 W conduction loss at 12 A continuous drain current
Qg 86 nC (typ) - determines gate drive power requirement (~1.1 W @ 100 kHz, 13 V swing)
Eoss 6.8 µJ @ 400 V - directly reduces turn-on loss in ZVS circuits; 3× lower than standard SJ MOSFETs
trr 140 ns - supports >500 kHz resonant operation without diode-induced shoot-through risk
dIF/dt 900 A/µs - sustains high di/dt during LLC magnetizing current reversal without oscillation or failure
Ptot 195 W @ TC = 25 °C - enables compact heatsink design with RthJC = 0.64 °C/W

Pinout & Package

ThinPAK 8x8 (PG-VSON-4) is a leadless surface-mount package with 1 mm profile and 64 mm² footprint - 57% smaller area and 77% lower height than D²PAK. Drain is exposed on bottom side; terminals are arranged for minimal loop inductance in high-frequency layouts.

Pin/Terminal Circuit Role Design Meaning
Pin 1 (Gate) Control input Receives 10–13 V gate drive; RG = 1.5 Ω internal gate resistance limits dv/dt during switching
Pin 2 (Source) Driver return path Low-inductance connection to driver IC ground; shared with power source return in half-bridge layout
Pin 3 & 4 (Power Source) Main current return Parallel-source configuration reduces RDS(on) temperature coefficient and improves current sharing
Pin 5 (Drain) High-voltage output node Exposed drain pad on bottom provides thermal path to PCB copper and electrical connection to HV rail

Key Features

Feature Design Value
Ultra-fast body diode trr = 140 ns, Qrr = 0.7 µC - eliminates need for external anti-parallel diode in LLC synchronous rectification
Commutation ruggedness dIF/dt = 900 A/µs - withstands rapid current reversal in resonant tank without failure or voltage ringing
Low energy-related capacitance Co(er) = 90 pF - minimizes turn-on loss in ZVS applications where Eoss dominates switching loss
Industrial qualification JEDEC J-STD-020 MSL2a, JESD22-A108 - supports reflow soldering at 260 °C and long-term reliability in 85/85 environments
Thermal efficiency RthJC = 0.64 °C/W - enables >150 W dissipation with minimal heatsink on 6 cm² PCB copper area

Applications

Server Power Supply Telecom Rectifier

Use Scenario: Primary-side switch in 3.3 kW LLC resonant converter for AI server rack PSU.

IC Role / Device Role / Timing Role: High-side switching element operating at 300–500 kHz with ZVS; body diode conducts magnetizing current during dead time.

Use Value: 6.8 µJ Eoss and 140 ns trr reduce total switching loss by 22% vs. legacy SJ MOSFETs, enabling 96.3% peak efficiency.

Use Scenario: Active clamp forward or phase-shifted full-bridge stage in -48 V telecom rectifier.

IC Role / Device Role / Timing Role: Main switch handling 400 V DC bus; body diode recirculates leakage inductance energy during clamp cycle.

Use Value: 900 A/µs dIF/dt prevents diode-induced voltage spikes during fast clamp transitions, improving EMI and reliability.

LCD TV Power Board Industrial Lighting Driver

Use Scenario: PFC boost switch in 300 W slim-form factor LCD TV power board.

IC Role / Device Role / Timing Role: Continuous conduction mode (CCM) boost switch operating at 65 kHz; handles 12 A RMS input current.

Use Value: 0.165 Ω RDS(on) and low Qg enable >95% PFC efficiency at full load while maintaining <65 °C case temperature.

Use Scenario: High-frequency buck-boost LED driver for 150 W streetlight with DALI dimming.

IC Role / Device Role / Timing Role: Synchronous rectifier switch in secondary-side topology; body diode replaces discrete Schottky.

Use Value: Integrated diode with VSD = 0.9 V @ 14 A eliminates 0.4 W diode conduction loss and simplifies BOM by one component.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage resonant switching applications.

Alternative Part Technical Difference Application Difference Selection Advice
IPW65R099CFD7 RDS(on) = 0.099 Ω (lower), Qg = 115 nC (higher), same ThinPAK 8x8 package Better conduction loss but higher gate drive loss; requires stronger driver for 500 kHz+ operation Select when thermal budget allows larger gate driver; avoid if gate drive capability limited to <2 A peak
STP65N6F6 RDS(on) = 0.085 Ω, Qg = 105 nC, TO-220FP package, no enhanced body diode Higher Eoss (12 µJ), trr > 250 ns - unsuitable for ZVS above 200 kHz without snubbers Acceptable only in hard-switched PFC or lower-frequency flyback; not recommended for LLC or phase-shifted bridges

Compared with IPW65R099CFD7 and STP65N6F6, IPL65R165CFDAUMA2 offers optimal balance of low Qg, ultra-fast diode, and industrial qualification - making it the preferred choice for space-constrained, high-frequency resonant converters where driver strength and diode performance are limiting factors.

Availability

IPL65R165CFDAUMA2 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and industrial LED drivers requiring stable component supply, long-lifecycle support, and traceable sourcing for production ramp-up.

Supply support for IPL65R165CFDAUMA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This part belongs to the CoolMOS™ CFD2 product line - designed specifically for high-efficiency, high-frequency resonant and soft-switching power conversion in datacenter, telecom, and industrial power systems.

FAQ

What is the maximum continuous drain current for IPL65R165CFDAUMA2 at 100 °C case temperature?

The maximum continuous drain current is 13.5 A at TC = 100 °C, as specified in Table 2 of the Rev. 2.1 datasheet. This value accounts for thermal derating due to junction-to-case thermal resistance (0.64 °C/W) and maximum junction temperature limit of 150 °C. Operation above this current requires active cooling or reduced ambient temperature.

Does IPL65R165CFDAUMA2 require a negative gate turn-off voltage?

No - the device operates with 0 V to +10 V or +13 V gate drive; negative turn-off voltage is not required or recommended. The gate threshold voltage is 3.5–4.5 V, and the maximum allowable gate-source voltage is ±30 V. Standard CMOS or dedicated gate drivers (e.g., 1EDN7512B) provide sufficient control without negative bias.

Can IPL65R165CFDAUMA2 replace older CoolMOS™ CFD parts in existing designs?

Yes - IPL65R165CFDAUMA2 is a direct replacement for IPL65R165CFD (same marking "65F6165", identical ThinPAK 8x8 package, and compatible pinout). Electrical specs are unchanged; the "AUMA2" suffix denotes tape-and-reel packaging per AEC-Q200-compliant logistics - no circuit or layout modifications needed.

What is the safe operating area (SOA) limitation at 80 °C case temperature?

At TC = 80 °C, the SOA is defined by thermal limits rather than avalanche or secondary breakdown. For DC operation, maximum VDS is ~320 V at 10 A (per Diagram 3); pulse operation up to 10 ms supports 400 V at 5 A. Derating follows the Ptot curve: 195 W at 25 °C linearly decreases to ~125 W at 80 °C case temperature.

IPL65R165CFDAUMA2 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
CoolMOS™ CFD2
Package/Case:
4-PowerTSFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
650 V
Current - Continuous Drain (Id) @ 25°C:
21.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
165mOhm @ 9.3A, 10V
Vgs(th) (Max) @ Id:
4.5V @ 900µA
Gate Charge (Qg) (Max) @ Vgs:
86 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
2340 pF @ 100 V
FET Feature:
-
Power Dissipation (Max):
195W (Tc)
Operating Temperature:
-40°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-VSON-4

IPL65R165CFDAUMA2 FAQ

1.How can I place an order for IPL65R165CFDAUMA2 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPL65R165CFDAUMA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPL65R165CFDAUMA2 reliable?

The price and inventory of IPL65R165CFDAUMA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPL65R165CFDAUMA2 is usually 5 days.

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IPL65R165CFDAUMA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPL65R165CFDAUMA2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPL65R165CFDAUMA2?

For technical support, including IPL65R165CFDAUMA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPL65R165CFDAUMA2 requirements.

6.How does Aetrix verify that IPL65R165CFDAUMA2 is sourced from the original manufacturer or authorized distributors?

All IPL65R165CFDAUMA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPL65R165CFDAUMA2 meets industry standards.

7.What is the process for return or replacement of IPL65R165CFDAUMA2?

All IPL65R165CFDAUMA2 units undergo pre-shipment inspection (PSI). If there is an issue with IPL65R165CFDAUMA2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPL65R165CFDAUMA2 part is unused and in its original packaging.

Return procedure for IPL65R165CFDAUMA2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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