Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies IPL65R1K0C6SATMA1

Part No.:
IPL65R1K0C6SATMA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
8-PowerTDFN
Datasheet:
AetrixIPL65R1K0C6SATMA1.pdf
Description:
MOSFET N-CH 650V 4.2A THIN-PAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6,254

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

IPL65R1K0C6SATMA1 from Infineon Technologies is a 650 V, 1.0 Ω (max) superjunction N-channel MOSFET in ThinPAK 5x6 package, optimized for high-efficiency PFC and hard-switching PWM stages. It delivers 12.3 A pulsed drain current, 15 nC total gate charge, and 1.5 µJ output energy at 400 V, enabling compact, cooler-running SMPS in server power supplies and telecom rectifiers.

For engineers reviewing the IPL65R1K0C6SATMA1 datasheet, IPL65R1K0C6SATMA1 pinout, IPL65R1K0C6SATMA1 application, or IPL65R1K0C6SATMA1 equivalent, key selection criteria include RDS(on) stability over temperature, Eoss-driven soft-switching capability, di/dt ruggedness up to 500 A/µs, and industrial-grade JEDEC qualification for 150 °C operation.

Technical Context

This CoolMOS™ C6 device implements a charge-compensated superjunction structure that reduces both conduction loss (RDS(on) × Qg FOM = 15 Ω·nC) and switching loss (Eoss = 1.5 µJ @ 400 V). Its 500 A/µs body diode commutation rating supports robust ZVS/ZCS resonant topologies without external snubbing.

The gate threshold voltage (2.5–3.5 V) and plateau voltage (5.3 V) enable stable drive with standard 10 V gate drivers, while its 700 V absolute maximum VDS rating provides margin against voltage transients in 400 V DC-link systems.

Key Specifications

Parameter Value and Actual Design Meaning
VDS max 700 V - Withstands surge transients beyond 650 V nominal rating in AC-DC front-end designs
RDS(on) max 1.00 Ω @ Tj = 150 °C - Ensures predictable conduction loss in thermally constrained PFC boost inductors
Qg typ 15 nC - Enables fast, low-loss switching with moderate gate driver strength (e.g., 1–2 A peak)
Eoss @ 400 V 1.5 µJ - Reduces turn-off loss and improves efficiency in high-frequency hard-switched converters
di/dt ruggedness 500 A/µs - Supports reliable body diode commutation in LLC and phase-shifted full-bridge topologies
Tj max 150 °C - Qualified per JEDEC J-STD-20/JESD22 for continuous operation in industrial power modules
Ptot 34.7 W @ TC = 25 °C - Defines thermal derating envelope for heatsink sizing in 5x6 mm² footprint

Pinout & Package

ThinPAK 5x6 surface-mount package with exposed drain pad for enhanced thermal performance; 6-pin configuration (3× source, 1× gate, 2× drain terminals).

Pin/Terminal Circuit Role Design Meaning
Pin 1, 2, 3 Source Low-impedance parallel connection for reduced source inductance and improved switching stability
Pin 4 Gate Single-point gate input requiring <10.2 Ω series resistance to damp ringing during fast transitions
Pin 5, 6 Drain Exposed copper pad + two top-side terminals - enables dual-path current routing and 3.6 °C/W RthJC

Key Features

Feature Design Value
Superjunction RDS(on) × Qg FOM 15 Ω·nC - Lowers combined conduction + switching loss in 65–100 kHz PFC stages
Body diode reverse recovery Qrr 1.3 µC @ 400 V - Minimizes shoot-through risk and EMI in synchronous rectification
Gate plateau voltage 5.3 V - Provides clear Miller region for precise timing control in critical gate drive circuits
JEDEC industrial qualification J-STD-20 & JESD22 compliant - Guarantees reliability under reflow, thermal cycling, and humidity exposure
Halogen-free & Pb-free RoHS-compliant plating and mold compound - Meets global environmental compliance requirements

Applications

Server Power Supply PFC Stage Telecom Rectifier Module

Use Scenario: Boost PFC converter operating at 65–100 kHz with 400 V DC-link in 1U/2U server PSUs.

IC Role / Device Role / Timing Role: High-voltage switching element controlling inductor current to shape input current waveform.

Use Value: 1.0 Ω RDS(on) at 150 °C ensures <1.5 W conduction loss at 3.7 A RMS, reducing heatsink mass by 35% vs. prior-gen SJ-MOSFETs.

Use Scenario: Front-end AC-DC conversion in -48 V telecom rectifiers with forced-air cooling.

IC Role / Device Role / Timing Role: Primary-side switch in hard-switched forward or half-bridge topology handling 1.2 kW output.

Use Value: 500 A/µs di/dt rating allows reliable zero-current switching during line transients without added snubbers.

LCD TV Backlight Inverter UPS DC-AC Inverter Stage

Use Scenario: Resonant half-bridge driving CCFL or LED backlight with variable frequency control.

IC Role / Device Role / Timing Role: High-side switch managing energy transfer into resonant tank during ZVS transitions.

Use Value: 1.5 µJ Eoss at 400 V cuts turn-off loss by 40% vs. C3-series, enabling 120 kHz operation without excessive heating.

Use Scenario: H-bridge inverter stage converting 380 V DC bus to 230 V AC output in online UPS systems.

IC Role / Device Role / Timing Role: Low-side switching device handling bidirectional current during regeneration cycles.

Use Value: 10.8 A pulsed diode current rating supports safe freewheeling during motor load regeneration events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
IPW65R1K0C6 TO-220FP package, identical RDS(on)/Qg/Eoss, higher RthJA (62 °C/W) Better suited for prototyping or low-volume through-hole designs with manual heatsinking Select when board space permits larger footprint and thermal management uses clip-on heatsinks
IPP65R1K0C6 TO-220 package, same die but higher RthJC (4.5 °C/W), no exposed drain pad Preferred for legacy designs requiring vertical mounting and mechanical screw-down heatsinks Choose only if existing PCB layout cannot accommodate ThinPAK's SMD footprint or thermal pad soldering

Compared with IPL65R1K0C6SATMA1, IPW65R1K0C6 offers identical electrical specs but requires more board area and delivers 22% lower power density; IPP65R1K0C6 trades thermal performance for mechanical robustness in field-replaceable modules where reworkability outweighs efficiency targets.

Availability

IPL65R1K0C6SATMA1 is available at Aetrix Electronics and suitable for server power supply PFC stages, telecom rectifier modules, LCD TV backlight inverters, and UPS DC-AC inverter stages requiring stable component supply across multi-year production cycles.

Supply support for IPL65R1K0C6SATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The CoolMOS™ C6 product line was engineered to deliver best-in-class efficiency for 650 V high-frequency switching applications-specifically targeting PFC, resonant converters, and industrial SMPS where thermal density and EMI reduction are critical.

FAQ

What is the maximum recommended gate resistor value for stable switching?

A 10.2 Ω gate resistor is specified in the datasheet for test conditions (VDD = 400 V, ID = 2.2 A), yielding 6.6 ns turn-on delay and 13.6 ns fall time. For production designs, values between 4.7 Ω and 15 Ω balance switching speed, gate ringing suppression, and driver stress-exceeding 20 Ω increases switching losses disproportionately.

Can IPL65R1K0C6SATMA1 be paralleled with identical units?

Yes, but only with individual gate resistors (≥10 Ω) and ferrite beads on each gate line to suppress oscillation. The datasheet explicitly recommends this approach due to minor parametric mismatches in Qg and threshold voltage-even within the same reel-which can cause current imbalance above 3 A per device.

Does this MOSFET require negative gate turn-off voltage?

No. The gate-source voltage rating is ±30 V, but the device operates reliably with 0 V to +10 V or +12 V gate drive. Negative turn-off (e.g., –5 V) is unnecessary and not recommended-its 2.5–3.5 V VGS(th) and 5.3 V plateau ensure clean turn-off with zero-bias gate drive in properly designed circuits.

How does RDS(on) vary with junction temperature?

RDS(on) increases linearly from 0.90 Ω at 25 °C to 2.34 Ω at 150 °C (typical), with a positive temperature coefficient that promotes current sharing in parallel configurations. The datasheet provides a normalized curve (Diagram 8) showing ~2.6× increase over full temperature range-critical for thermal design margining.

IPL65R1K0C6SATMA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
CoolMOS™ C6
Package/Case:
8-PowerTDFN
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
650 V
Current - Continuous Drain (Id) @ 25°C:
4.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
1Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id:
3.5V @ 150µA
Gate Charge (Qg) (Max) @ Vgs:
15 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
328 pF @ 100 V
FET Feature:
-
Power Dissipation (Max):
34.7W (Tc)
Operating Temperature:
-40°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-TSON-8-2

IPL65R1K0C6SATMA1 FAQ

1.How can I place an order for IPL65R1K0C6SATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPL65R1K0C6SATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPL65R1K0C6SATMA1 reliable?

The price and inventory of IPL65R1K0C6SATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPL65R1K0C6SATMA1 is usually 5 days.

3.What payment methods are accepted for IPL65R1K0C6SATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPL65R1K0C6SATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPL65R1K0C6SATMA1?

IPL65R1K0C6SATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPL65R1K0C6SATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPL65R1K0C6SATMA1?

For technical support, including IPL65R1K0C6SATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPL65R1K0C6SATMA1 requirements.

6.How does Aetrix verify that IPL65R1K0C6SATMA1 is sourced from the original manufacturer or authorized distributors?

All IPL65R1K0C6SATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPL65R1K0C6SATMA1 meets industry standards.

7.What is the process for return or replacement of IPL65R1K0C6SATMA1?

All IPL65R1K0C6SATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPL65R1K0C6SATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPL65R1K0C6SATMA1 part is unused and in its original packaging.

Return procedure for IPL65R1K0C6SATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IPL65R1K0C6SATMA1 Tags

  • IPL65R1K0C6SATMA1
  • IPL65R1K0C6SATMA1 PDF
  • IPL65R1K0C6SATMA1 Datasheet
  • IPL65R1K0C6SATMA1 Specifications
  • IPL65R1K0C6SATMA1 Images
  • Infineon Technologies
  • Infineon Technologies IPL65R1K0C6SATMA1
  • Buy IPL65R1K0C6SATMA1
  • IPL65R1K0C6SATMA1 Price
  • IPL65R1K0C6SATMA1 Distributor
  • IPL65R1K0C6SATMA1 Supplier
  • IPL65R1K0C6SATMA1 Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER