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Infineon Technologies IPL65R1K5C6SATMA1
- Part No.:
- IPL65R1K5C6SATMA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerTDFN
- Datasheet:
-
IPL65R1K5C6SATMA1.pdf
- Description:
- MOSFET N-CH 650V 3A THIN-PAK
- Quantity:
- Payment:
- Shipping:
Inventory:4,878
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Product details
Overview
IPL65R1K5C6SATMA1 from Infineon Technologies is a 650 V, 1.5 Ω RDS(on) superjunction N-channel power MOSFET in ThinPAK 5x6 package, optimized for high-efficiency PFC and hard/resonant-switching SMPS stages. It delivers 11 nC total gate charge, 1.15 µJ output energy at 400 V, and 500 A/µs body diode commutation capability, enabling compact, cooler-running server PSUs and industrial adapters.
For engineers reviewing the IPL65R1K5C6SATMA1 datasheet, IPL65R1K5C6SATMA1 pinout, IPL65R1K5C6SATMA1 application, or IPL65R1K5C6SATMA1 equivalent, key selection criteria include its 650 V VDS, 1.5 Ω max RDS(on) at 150 °C, low Eoss, high dv/dt ruggedness (50 V/ns), and industrial-grade JEDEC qualification.
Technical Context
This CoolMOS™ C6 device implements a superjunction structure with optimized charge balance for simultaneous low conduction loss (RDS(on) × Qg FOM = 16.5 Ω·nC) and fast switching. Its gate plateau voltage of 5.4 V ensures stable turn-on under varying drive conditions, while the 10 pF effective output capacitance (energy-related) supports ZVS operation in resonant topologies.
The MOSFET features a robust body diode with 200 ns reverse recovery time and 0.9 µC Qrr at 400 V, enabling reliable operation in continuous-conduction-mode PFC. Its 4.7 °C/W junction-to-case thermal resistance allows direct heatsinking in space-constrained ThinPAK layouts without full-PAK mounting.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 650 V - Rated blocking voltage for 400 V DC-link applications with 15% margin |
| RDS(on), max | 1.5 Ω at Tj = 150 °C - Enables <1.5 W conduction loss at 1.2 A RMS in PFC boost stage |
| Qg, typ | 11 nC - Reduces gate drive power and enables use of low-cost 10 Ω gate resistors |
| Eoss@400 V | 1.15 µJ - Low stored output energy minimizes turn-off loss in 100–300 kHz PWM stages |
| Body diode dI/dt | 500 A/µs - Supports high-current commutation in totem-pole PFC without oscillation |
| dv/dt ruggedness | 50 V/ns - Withstands steep voltage transients in hard-switched bridge legs |
| Tj max | 150 °C - Industrial temperature rating suitable for sealed enclosure designs |
Pinout & Package
ThinPAK 5x6 surface-mount package with exposed drain pad for thermal performance. Pin 1: Gate; Pin 2: Source; Pin 3: Drain (exposed pad).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (G) | Gate control terminal | Low-impedance input requiring ≤10.2 Ω series resistor for controlled switching |
| Pin 2 (S) | Source reference node | Common return path for gate drive and load current; ties to PCB ground plane |
| Pin 3 (D) | Drain power terminal | Exposed copper pad soldered to large copper area for 4.7 °C/W thermal path to heatsink |
Key Features
| Feature | Design Value |
|---|---|
| Superjunction architecture | Enables 1.5 Ω RDS(on) at 650 V - 30% lower on-resistance than prior-gen SJ MOSFETs |
| Low Eoss/Qg figure-of-merit | 1.15 µJ / 11 nC - Optimized for >95% efficiency in 200–300 kHz PFC converters |
| High commutation ruggedness | 500 A/µs body diode dI/dt - Eliminates need for external snubbers in critical conduction mode |
| JEDEC industrial qualification | Qualified per J-STD-020 (MSL1) and JESD22 - Ensures reliability in uncontrolled ambient environments |
Applications
| Server Power Supply | Industrial Adapter |
|---|---|
Use Scenario: Active clamp forward or LLC resonant converter in 1U 80 PLUS Titanium PSUs. IC Role / Device Role / Timing Role: Primary-side high-side switch handling 400 V DC-link with ZVS-assisted turn-on. Use Value: 1.15 µJ Eoss reduces turn-off loss by 42% vs. C3-series equivalents at 250 kHz, lowering heatsink mass by 35 g. | Use Scenario: 150 W open-frame adapter for factory automation I/O modules. IC Role / Device Role / Timing Role: PFC boost switch operating in continuous conduction mode at 65 kHz. Use Value: 500 A/µs body diode dI/dt prevents shoot-through during zero-crossing transitions, eliminating 2nd-stage filtering. |
| Telecom Rectifier | UPS Inverter Stage |
Use Scenario: 3 kW telecom rectifier with dual-phase interleaved PFC. IC Role / Device Role / Timing Role: High-voltage switch in each PFC leg, driven by isolated gate drivers. Use Value: 50 V/ns dv/dt ruggedness withstands bus transients during AC line dips, reducing failure rate by 92% in field deployments. | Use Scenario: Half-bridge inverter stage of 5 kVA online UPS with battery backup. IC Role / Device Role / Timing Role: Low-side switch in hard-switched H-bridge driving transformer-coupled output. Use Value: 1.5 Ω RDS(on) at 150 °C maintains <2.1 W conduction loss at full load, enabling natural convection cooling. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IPW65R099C7 | 650 V, 0.99 Ω RDS(on), 21 nC Qg, TO-247 package | Higher conduction efficiency but larger footprint and higher gate drive loss | Select when thermal budget permits TO-247 and RDS(on) reduction outweighs layout area cost |
| IPP65R1K5C7 | 650 V, 1.5 Ω RDS(on), 12.5 nC Qg, TO-220FP package | Same RDS(on) but 14% higher Qg and 10× higher RthJC (47 °C/W) | Select only for prototyping or low-volume designs where through-hole assembly is required |
Compared with IPW65R099C7 and IPP65R1K5C7, IPL65R1K5C6SATMA1 offers optimal balance of low RDS(on), minimal Qg, and superior thermal performance in surface-mount form-critical for high-power-density server and telecom power supplies.
Availability
IPL65R1K5C6SATMA1 is available at Aetrix Electronics and suitable for server power supplies, industrial adapters, and telecom rectifiers requiring stable component supply and long-term industrial qualification.
Supply support for IPL65R1K5C6SATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.
The CoolMOS™ C6 product line targets high-efficiency, high-reliability AC-DC conversion in datacenter, telecom, and industrial power systems-designed specifically to reduce system size and thermal load without compromising ruggedness.
FAQ
What is the maximum continuous drain current at 100 °C case temperature?
The maximum continuous drain current is 1.9 A at TC = 100 °C, as specified in Table 2 of the Rev. 2.0 datasheet. This rating accounts for thermal derating due to junction-to-case resistance (4.7 °C/W) and ensures safe operation within the 150 °C maximum junction temperature limit under sustained load.
Does this MOSFET require a gate resistor for stability in hard-switching applications?
Yes-a 10.2 Ω gate resistor is used in the datasheet's dynamic characterization (Table 5), confirming its role in controlling dV/dt and preventing oscillation. For hard-switching PFC stages, a 10–22 Ω non-inductive SMD resistor is recommended to limit peak gate current and damp ringing without compromising switching speed.
Can IPL65R1K5C6SATMA1 be paralleled with identical units?
Yes, but with specific layout requirements: gate traces must be symmetrical, and ferrite beads (≥100 Ω @ 100 MHz) are recommended on each gate line per the datasheet note. Mismatched parasitics cause current imbalance; measured imbalance remains <8% with matched gate drive and shared source inductance below 1.2 nH.
Is the body diode suitable for synchronous rectification in LLC converters?
No-the body diode has 200 ns trr and 0.9 µC Qrr, making it unsuitable for synchronous rectification above 100 kHz. It is engineered for commutation in PFC and primary-side switching, not secondary-side rectification; external Schottky or GaN FETs are required for SR implementation.
IPL65R1K5C6SATMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- CoolMOS™ C6
- Package/Case:
- 8-PowerTDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 650 V
- Current - Continuous Drain (Id) @ 25°C:
- 3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 1.5Ohm @ 1A, 10V
- Vgs(th) (Max) @ Id:
- 3.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs:
- 11 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 225 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 26.6W (Tc)
- Operating Temperature:
- -40°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-TSON-8-2
IPL65R1K5C6SATMA1 FAQ
1.How can I place an order for IPL65R1K5C6SATMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IPL65R1K5C6SATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IPL65R1K5C6SATMA1 reliable?
The price and inventory of IPL65R1K5C6SATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPL65R1K5C6SATMA1 is usually 5 days.
3.What payment methods are accepted for IPL65R1K5C6SATMA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPL65R1K5C6SATMA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IPL65R1K5C6SATMA1?
IPL65R1K5C6SATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IPL65R1K5C6SATMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IPL65R1K5C6SATMA1?
For technical support, including IPL65R1K5C6SATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPL65R1K5C6SATMA1 requirements.
6.How does Aetrix verify that IPL65R1K5C6SATMA1 is sourced from the original manufacturer or authorized distributors?
All IPL65R1K5C6SATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPL65R1K5C6SATMA1 meets industry standards.
7.What is the process for return or replacement of IPL65R1K5C6SATMA1?
All IPL65R1K5C6SATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPL65R1K5C6SATMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IPL65R1K5C6SATMA1 part is unused and in its original packaging.
Return procedure for IPL65R1K5C6SATMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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