Infineon Technologies IPL65R1K5C6SE8211ATMA1

Overview

IPL65R1K5C6SE8211ATMA1 from Infineon Technologies is a 650 V, 1.5 Ω R_DS(on) CoolMOS™ C6 superjunction N-channel power MOSFET in ThinPAK 5x6 package, optimized for high-efficiency PFC and hard/resonant-switching SMPS. It delivers 11 nC total gate charge, 1.15 µJ output energy at 400 V, and 500 A/µs body diode commutation speed. Used in server PSUs, telecom rectifiers, and LCD TV power stages.

For engineers reviewing the IPL65R1K5C6SE8211ATMA1 datasheet, IPL65R1K5C6SE8211ATMA1 pinout, IPL65R1K5C6SE8211ATMA1 application, or IPL65R1K5C6SE8211ATMA1 equivalent, key selection criteria include R_DS(on) vs. temperature stability, E_oss-driven switching loss, gate drive simplicity, and industrial-grade ruggedness under repetitive avalanche and high dv/dt stress.

Technical Context

This device implements Infineon's superjunction architecture with optimized charge balancing for low conduction and switching losses simultaneously. Its 700 V V_DS rating at T_j,max enables robust operation in 400 V DC-link systems with margin, while the 5.4 V gate plateau voltage ensures stable Miller region control during turn-off.

The 1.35 Ω typical R_DS(on) at 25°C and 3.51 Ω max at 150°C reflects strong thermal stability; its 225 pF C_iss and 18 pF C_oss support fast, predictable switching with minimal gate drive power. Body diode reverse recovery (Q_rr = 0.9 µC, t_rr = 200 ns) is engineered for snubberless operation in critical conduction mode (CRM) PFC.

Key Specifications

Pinout & Package

ThinPAK 5x6 surface-mount package (JEDEC MO-263 variant), thermally enhanced with exposed drain pad on bottom side for PCB copper thermal spreading. Pin 1 = Gate, Pin 2 = Source, Pin 3 = Drain (exposed pad electrically connected to Drain).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Compared with IPW65R099C6 and STP65N6F6, IPL65R1K5C6SE8211ATMA1 offers optimal balance of low Q_g-driven switching loss, compact ThinPAK thermal performance, and industrial reliability-making it superior for high-density, high-efficiency 200–500 kHz power stages.

Availability

IPL65R1K5C6SE8211ATMA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and LCD TV backlight inverters requiring stable component supply, JEDEC-qualified industrial reliability, and consistent parametric performance across production lots.

Supply support for IPL65R1K5C6SE8211ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and R&D infrastructure.

This part belongs to the CoolMOS™ C6 superjunction MOSFET product line, designed specifically for high-efficiency, high-power-density AC/DC and DC/DC conversion in industrial, computing, and telecom infrastructure.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IPL65R1K5C6SE8211ATMA1 supports 1.9 A continuous drain current at T_C = 100°C, per Table 2 of the Rev. 2.0 datasheet. This rating assumes proper PCB copper area (6 cm² drain pad) and vertical mounting without forced air cooling. Derating is not required below this temperature.

Does this MOSFET require a gate resistor, and what value is recommended?

Yes-a gate resistor is mandatory for EMI control and oscillation suppression. The datasheet specifies 10.2 Ω for characterization (Table 5), and Infineon recommends 5–15 Ω for most 1–3 kW PFC and resonant applications. Lower values increase switching speed but raise EMI risk; higher values reduce dv/dt stress on gate driver.

Can IPL65R1K5C6SE8211ATMA1 be paralleled with identical units?

Yes, but only with gate ferrite beads (e.g., 100 Ω @ 100 MHz) on each unit's gate line, as explicitly noted in the datasheet's application note. Without individual gate damping, unequal dynamic current sharing occurs due to layout parasitics and minor parameter spread, risking thermal runaway.

Is the ThinPAK 5x6 package lead-free and RoHS-compliant?

Yes-the device uses Pb-free plating and halogen-free mold compound, fully compliant with RoHS Directive 2011/65/EU and JEDEC J-STD-020 moisture sensitivity level 1 (MSL1). Reflow profile follows IPC/JEDEC J-STD-020D, with peak temperature ≤260°C for 30 seconds.