Infineon Technologies IPL65R650C6SATMA1

Overview

IPL65R650C6SATMA1 from Infineon Technologies is a 650 V, 0.65 Ω R_DS(on) superjunction MOSFET in ThinPAK 5x6 package, optimized for high-efficiency PFC and hard-switching SMPS stages. It delivers 23 nC total gate charge, 2 µJ output energy at 400 V, and 500 A/µs body diode commutation capability, enabling compact, cool-running power supplies in server PSUs and telecom rectifiers.

For engineers reviewing the IPL65R650C6SATMA1 datasheet, IPL65R650C6SATMA1 pinout, IPL65R650C6SATMA1 application, or IPL65R650C6SATMA1 equivalent, key selection criteria include its low R_DS(on) × Q_g figure-of-merit (0.65 Ω × 23 nC), rugged 700 V V_DS rating at T_j,max, and validated performance in 400 V DC-link resonant converters with <13 ns fall time.

Technical Context

This CoolMOS™ C6 device implements a charge-compensated superjunction structure that reduces both conduction and switching losses simultaneously. Its 21 nC typical gate charge and 11 nC gate-to-drain charge enable fast turn-on/off with minimal Miller-induced oscillation under 400 V bus conditions.

The MOSFET features a robust body diode with 270 ns reverse recovery time and 13 A peak reverse recovery current at 100 A/µs di/dt, supporting reliable operation in continuous conduction mode (CCM) PFC without external snubbing in most designs.

Key Specifications

Pinout & Package

ThinPAK 5x6 surface-mount package (3.3 mm height, 5.0 mm × 6.0 mm footprint) with exposed drain pad for enhanced thermal transfer. Pin 1 = Gate, Pin 2 = Source, Pin 3 = Drain (exposed pad).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Compared with IPW65R095C6 and STP65N6F6, IPL65R650C6SATMA1 offers optimal balance of low-profile packaging, moderate gate charge, and industry-leading commutation ruggedness-making it uniquely suited for high-density, high-reliability PFC and resonant converter designs where board space and transient immunity are prioritized over absolute lowest R_DS(on).

Availability

IPL65R650C6SATMA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and UPS inverters requiring stable component supply and long-term industrial-grade availability.

Supply support for IPL65R650C6SATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to the CoolMOS™ C6 superjunction MOSFET product line, engineered specifically for high-efficiency, high-power-density AC-DC conversion in datacenter, telecom, and industrial power systems.

FAQ

What is the maximum recommended gate resistor value for IPL65R650C6SATMA1 in a 100 kHz PFC application?

The datasheet specifies 6.8 Ω gate resistor for dynamic characterization at 400 V bus. For 100 kHz PFC, a 10–15 Ω non-inductive SMD resistor balances switching loss reduction and gate oscillation suppression. Higher values increase turn-on delay and reduce dV/dt stress but raise conduction loss due to prolonged linear region operation.

Does IPL65R650C6SATMA1 require a gate driver with negative turn-off capability?

No. The device's 3.5 V maximum gate threshold voltage and 17.5 Ω internal gate resistance allow reliable turn-off with 0 V gate drive. Negative turn-off is not required, though a –2 V to –5 V pull-down improves noise immunity in high-dV/dt environments like multi-phase interleaved PFC.

Can IPL65R650C6SATMA1 be paralleled with identical units without gate ferrite beads?

No. The datasheet explicitly recommends ferrite beads on each gate line or individual totem-pole drivers when paralleling. Without them, unequal gate loop inductance causes current imbalance and thermal runaway due to the device's positive temperature coefficient of R_DS(on).

What is the thermal resistance from junction to case (R_thJC) and how should it be used in PCB layout?

R_thJC is 2.2 °C/W, measured from die to the exposed drain pad. To achieve this value, the PCB must use ≥6 cm² of 70 µm thick copper connected directly to the drain pad via ≥4 thermal vias (0.3 mm diameter, 0.8 mm pitch). Insufficient copper area increases effective R_thJC by up to 40 %.