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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPLK60R1K5PFD7ATMA1

Name: IPLK60R1K5PFD7ATMA1
Brand: Infineon Technologies
SKU: IPLK60R1K5PFD7ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPLK60R1K5PFD7ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: IPLK60R1K5PFD7ATMA1.pdf

Description:: MOSFET N-CH 600V 3.8A THIN-PAK

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Product details

Overview

IPLK60R1K5PFD7ATMA1 from Infineon Technologies is a 600 V superjunction (SJ) N-channel power MOSFET in ThinPAK 5x6 package, featuring R_DS(on) = 1.5 Ω (max), Q_g = 4.6 nC (typ), and E_oss = 0.5 µJ @ 400 V. It integrates a fast body diode (dI_F/dt = 1300 A/µs) and zener-protected gate, optimized for ZVS topologies in high-density AC-DC adapters and LED drivers.

For engineers reviewing the IPLK60R1K5PFD7ATMA1 datasheet, IPLK60R1K5PFD7ATMA1 pinout, IPLK60R1K5PFD7ATMA1 application, or IPLK60R1K5PFD7ATMA1 equivalent, key selection criteria include its low R_DS(on)×Q_g figure-of-merit, 150 °C junction rating, Kelvin source configuration for gate drive stability, and JEDEC-qualified industrial reliability.

Technical Context

This CoolMOS™ PFD7 device implements a charge-compensated superjunction structure enabling high-voltage blocking (600 V) with significantly reduced conduction and switching losses versus planar MOSFETs. Its internal Kelvin source terminal (Pin 3) separates power and signal return paths to minimize gate loop inductance and suppress oscillation during hard commutation.

The integrated fast-recovery body diode (t_rr = 40–59 ns, Q_rr = 0.06–0.12 µC) and high dI_F/dt capability (1300 A/µs) support robust zero-voltage switching in resonant converters. The 5.0 °C/W R_thJC thermal resistance enables high-power operation on compact PCB layouts with minimal copper area.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Rated blocking voltage for primary-side switching in universal-input offline SMPS up to 400 V DC bus.
R_DS(on)	1.5 Ω max @ T_j = 150 °C - Enables <3.8 A continuous drain current at 100 °C case temperature with low conduction loss.
Q_g	4.6 nC typ - Low gate charge reduces driver power requirement and supports >300 kHz switching in ZVS designs.
E_oss	0.5 µJ @ 400 V - Minimizes turn-on energy loss and eases soft-switching implementation in LLC and PSFB topologies.
dI_F/dt	1300 A/µs - Ensures reliable body diode commutation under high di/dt stress without failure in asymmetric half-bridge configurations.
R_thJC	5.0 °C/W - Allows 25 W power dissipation with only 125 °C junction-to-case temperature rise, supporting high-density thermal design.
V_GS(th)	3.5–4.5 V - Compatible with standard 5 V or 10 V gate drivers; avoids false turn-on with typical noise margins.

Pinout & Package

ThinPAK 5x6 surface-mount package (3.3 mm height), thermally enhanced with exposed drain pad. Pin numbering per JEDEC MO-263AB: Pins 5–8 = Drain (common), Pin 4 = Gate, Pin 3 = Kelvin Source, Pins 1–2 = Power Source.

Pin/Terminal	Circuit Role	Design Meaning
1,2	Power Source	Main current return path for load current; connects to PCB ground plane with low-inductance layout.
3	Kelvin Source	Dedicated sense connection for gate driver feedback; isolates source inductance from gate loop to stabilize switching edge.
4	Gate	Control input for MOSFET channel; requires series gate resistor (RG ≈ 10 Ω) to damp ringing per datasheet recommendation.
5–8	Drain	High-voltage switch node; electrically and thermally connected to large copper pour for heat dissipation and EMI control.

Key Features

Feature	Design Value
Ultra-low R_DS(on) × Q_g FOM	Reduces combined conduction + switching loss, enabling >94% efficiency in 65 W adapter designs at 200 kHz.
Integrated zener-protected gate	Withstands ±30 V dynamic gate-source transients, eliminating need for external gate clamp in cost-sensitive consumer applications.
Fast body diode with soft recovery	Q_rr ≤ 0.12 µC and t_rr ≤ 59 ns minimize voltage overshoot and EMI during hard commutation in flyback and QR PFC stages.
Kelvin source configuration	Enables precise gate drive referencing independent of power source inductance, critical for stable operation above 150 kHz.
JEDEC industrial qualification	Validated for continuous operation at T_j = 150 °C, supporting extended lifetime in sealed lighting and motor drive enclosures.

Applications

USB-C PD Adapters

Smart LED Drivers

Use Scenario: 65 W GaN-assisted active-clamp flyback with ZVS operation at 200–300 kHz.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch managing 400 V DC bus and delivering regulated 20 V output.

Use Value: Low E_oss and fast body diode enable >95% peak efficiency while maintaining <10 mm board height.

Use Scenario: High-PF, dimmable constant-current LED driver for commercial downlights (30–100 W).

IC Role / Device Role / Timing Role: Critical switch in interleaved boost PFC stage operating at 70 kHz with CRM control.

Use Value: 1.5 Ω R_DS(on) minimizes conduction loss at 1.2 A RMS, reducing heatsink size by 40% vs. legacy SJ MOSFETs.

BLDC Motor Controllers

Industrial Power Supplies

Use Scenario: 24 V/300 W sensored BLDC inverter with 3-phase bridge and 10 kHz PWM.

IC Role / Device Role / Timing Role: Low-side switch in half-bridge leg handling 15 A peak phase current and reverse recovery stress.

Use Value: 1300 A/µs dI_F/dt rating prevents diode failure during regenerative braking commutation events.

Use Scenario: 48 V/500 W telecom rectifier with dual-active-bridge isolation and 1 MHz switching.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in LLC resonant converter with 400 V input.

Use Value: Kelvin source pin ensures clean gate drive timing across wide temperature range (−40 to +125 °C ambient).

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPAK60R1K5PFD7XKSA1	Same die, TO-252-3 (DPAK) package; R_thJA = 62 °C/W vs. 35–62 °C/W (SMD); no Kelvin source.	Limited to lower-frequency (<100 kHz), higher-thermal-margin designs due to higher thermal resistance and lack of Kelvin sensing.	Select when board space allows DPAK footprint and gate drive layout does not require Kelvin source isolation.
IPP60R1K5PFD7XKSA1	Same die, TO-220FP package; R_thJC = 3.5 °C/W but through-hole mounting; no Kelvin source.	Suitable for high-power (>60 W), forced-air-cooled industrial supplies where mechanical robustness outweighs SMD density needs.	Choose for legacy through-hole production lines or when thermal derating margin must exceed 40 W at 100 °C case.

Compared with IPAK60R1K5PFD7XKSA1 and IPP60R1K5PFD7XKSA1, IPLK60R1K5PFD7ATMA1 delivers superior high-frequency performance via Kelvin source and lower R_thJA in SMD form, making it optimal for ultra-slim consumer power electronics where layout-induced gate oscillation and thermal density are critical constraints.

Availability

IPLK60R1K5PFD7ATMA1 is available at Aetrix Electronics and suitable for USB-C PD adapters, smart LED drivers, BLDC motor controllers, and industrial power supplies requiring stable component supply and JEDEC-qualified reliability.

Supply support for IPLK60R1K5PFD7ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This part belongs to the CoolMOS™ PFD7 superjunction MOSFET product line, engineered specifically for cost-sensitive, high-efficiency AC-DC conversion in consumer chargers, adapters, and lighting-balancing performance, ruggedness, and manufacturability.

FAQ

What is the purpose of the Kelvin source pin (Pin 3) on IPLK60R1K5PFD7ATMA1?

The Kelvin source pin provides a dedicated low-inductance reference for the gate driver's source node, decoupling it from the main power source path (Pins 1–2). This eliminates voltage spikes induced by source inductance during fast switching, preventing false turn-off and improving gate drive stability-especially critical above 150 kHz in ZVS topologies.

Can IPLK60R1K5PFD7ATMA1 be paralleled with identical units?

Yes, but with strict layout requirements: each unit must use individual gate resistors and ferrite beads (as recommended in the datasheet), and all drain/source/Kelvin connections must be symmetrically routed. Mismatched parasitics can cause current imbalance; thermal coupling via shared copper area is advised to maintain uniform junction temperature across paralleled devices.

How does the integrated zener diode protect the gate?

The internal gate-source zener clamps transient overvoltage to ±20 V (typical), protecting against ESD events (HBM Class 2) and switching-induced dv/dt coupling. It eliminates the need for external TVS diodes in most consumer-grade designs, reducing BOM count while maintaining gate oxide integrity under repetitive 30 V dynamic gate stress.

Is IPLK60R1K5PFD7ATMA1 suitable for hard-switched PFC stages?

No-it is optimized for soft-switched (ZVS) topologies like LLC and active-clamp flyback. In hard-switched boost PFC, its relatively high Q_gd/Q_g ratio and body diode recovery characteristics increase switching loss and EMI. For hard-switched PFC, Infineon recommends CFD7 or CE-H series MOSFETs with tailored Q_rr and Co(tr) profiles.

IPLK60R1K5PFD7ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ PFD7

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 3.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.5Ohm @ 700mA, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 40µA

Gate Charge (Qg) (Max) @ Vgs:: 4.6 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 169 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 25W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TDSON-8-52

IPLK60R1K5PFD7ATMA1 FAQ

1.How can I place an order for IPLK60R1K5PFD7ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPLK60R1K5PFD7ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPLK60R1K5PFD7ATMA1 reliable?

The price and inventory of IPLK60R1K5PFD7ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPLK60R1K5PFD7ATMA1 is usually 5 days.

3.What payment methods are accepted for IPLK60R1K5PFD7ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPLK60R1K5PFD7ATMA1 transactions.

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4.How is shipping managed for IPLK60R1K5PFD7ATMA1?

IPLK60R1K5PFD7ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPLK60R1K5PFD7ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPLK60R1K5PFD7ATMA1?

For technical support, including IPLK60R1K5PFD7ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPLK60R1K5PFD7ATMA1 requirements.

6.How does Aetrix verify that IPLK60R1K5PFD7ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPLK60R1K5PFD7ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPLK60R1K5PFD7ATMA1 meets industry standards.

7.What is the process for return or replacement of IPLK60R1K5PFD7ATMA1?

All IPLK60R1K5PFD7ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPLK60R1K5PFD7ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPLK60R1K5PFD7ATMA1 part is unused and in its original packaging.

Return procedure for IPLK60R1K5PFD7ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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