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Infineon Technologies IPLK60R600PFD7ATMA1

Part No.:
IPLK60R600PFD7ATMA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
8-PowerTDFN
Datasheet:
AetrixIPLK60R600PFD7ATMA1.pdf
Description:
MOSFET N-CH 600V 7A THIN-PAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,968

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Product details

Overview

IPLK60R600PFD7ATMA1 from Infineon Technologies is a 600 V, 600 mΩ superjunction MOSFET in ThinPAK 5x6 package with Kelvin source configuration, optimized for ZVS topologies in high-density chargers and adapters. It features 8.5 nC total gate charge, 1.1 µJ Eoss at 400 V, and 1300 A/µs diode commutation speed, enabling efficient operation above 100 kHz in slim form-factor power supplies.

For engineers reviewing the IPLK60R600PFD7ATMA1 datasheet, IPLK60R600PFD7ATMA1 pinout, IPLK60R600PFD7ATMA1 application, or IPLK60R600PFD7ATMA1 equivalent, key selection criteria include RDS(on) temperature stability, fast body diode recovery (trr = 47–71 ns), low Qg/Qgd ratio for gate drive simplicity, and thermal resistance (RthJC = 2.80 °C/W) for compact heatsink integration.

Technical Context

This CoolMOS™ PFD7 device implements a superjunction structure with integrated zener-protected gate and fast-recovery body diode. Its Kelvin source terminal (Pin 3) separates power and signal return paths to minimize source inductance-induced switching oscillation and improve gate control fidelity during hard commutation.

The MOSFET supports high dv/dt ruggedness (120 V/ns) and reverse diode dv/dt rating (70 V/ns), making it suitable for asymmetric half-bridge and LLC resonant converters where precise timing and voltage transient immunity are critical. Its 1.216 Ω RDS(on) at Tj = 150 °C ensures stable conduction loss across industrial temperature range.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 600 V - Maximum blocking voltage for primary-side switching in 400 V DC bus applications
RDS(on), max 600 mΩ at Tj = 25 °C - Enables low conduction loss in <10 W output adapter designs
Qg, typ 8.5 nC - Reduces gate driver power requirement and enables use of low-cost SOT-23 drivers
Eoss @ 400 V 1.1 µJ - Low stored output capacitance energy minimizes turn-on loss in ZVS circuits
diF/dt 1300 A/µs - Supports robust commutation in high-frequency resonant topologies without snubbers
trr 47–71 ns - Fast body diode recovery reduces dead-time losses and EMI in synchronous rectification
RthJC 2.80 °C/W - Allows direct mounting to small metal-core PCBs or heatsinks in space-constrained adapters

Pinout & Package

ThinPAK 5x6 surface-mount package with exposed drain pad (Pins 5–8), single gate (Pin 4), Kelvin source (Pin 3), and dual-source power terminals (Pins 1–2). Package height ≤ 1.0 mm enables ultra-slim power supply designs.

Pin/Terminal Circuit Role Design Meaning
1, 2 Power Source Main current return path for load current; connected to PCB ground plane for thermal and electrical conduction
3 Kelvin Source Reference node for gate driver feedback-isolated from power loop inductance to stabilize VGS control
4 Gate Control input requiring <10.2 Ω series resistance to damp ringing; driven by 5–10 V logic-level signals
5–8 Drain High-voltage switch node; soldered to large copper area for heat dissipation and low-inductance HV routing

Key Features

Feature Design Value
Superjunction architecture Enables 600 V rating with RDS(on) × Qg = 5.1 Ω·nC-reducing combined conduction/switching loss by >25% vs. planar MOSFETs
Integrated zener diode Clamps gate-source voltage to ±20 V static / ±30 V dynamic-eliminates need for external gate protection in cost-sensitive designs
Fast body diode 1.0 V VSD at 1.7 A and trr ≤ 71 ns-enables zero-voltage switching in LLC without external diode parallel
ESD ruggedness HBM Class 2 (≥2 kV)-ensures robust handling during SMT assembly and board test without special ESD protocols
Thermal performance RthJA = 35–62 °C/W on 40 mm × 40 mm FR4 PCB-supports >90% efficiency in 25 mm tall USB-C PD adapters

Applications

USB-C PD Adapters LED Driver Power Stages

Use Scenario: 65 W compact wall charger with 30 mm × 30 mm × 25 mm form factor using asymmetric half-bridge topology.

IC Role / Device Role / Timing Role: High-side primary switch operating at 150–200 kHz with ZVS turn-on enabled by low Eoss and fast body diode.

Use Value: Achieves >94% peak efficiency and 0.45 W/cm³ power density without forced air cooling.

Use Scenario: Constant-current LED driver for commercial downlights with 400 V DC bus and 100–200 kHz PWM dimming.

IC Role / Device Role / Timing Role: Primary-side MOSFET in flyback controller IC reference design, handling 7 A pulsed drain current.

Use Value: Eliminates external snubber due to 120 V/ns dv/dt ruggedness, reducing BOM count by 3 components.

Industrial Motor Drives Smart Home Power Supplies

Use Scenario: 24 V/48 V BLDC inverter module for HVAC fans with integrated gate driver and thermal monitoring.

IC Role / Device Role / Timing Role: Low-side switch in three-phase inverter leg, leveraging Kelvin source for accurate current sensing.

Use Value: Enables <±1% current measurement accuracy over 0–100 °C ambient via isolated sense path.

Use Scenario: Dual-output (5 V + 12 V) SMPS for smart speaker base station with standby power <30 mW.

IC Role / Device Role / Timing Role: Active clamp switch in active-clamp forward converter, operating in discontinuous conduction mode.

Use Value: Reduces no-load consumption by 40% vs. standard QR flyback due to low IDSS (≤37 µA at 600 V).

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
IPAK60R600PFD7 Same die, TO-252-3 package; RthJC = 3.0 °C/W; no Kelvin source Lacks Kelvin source-unsuitable for high-accuracy current sensing or >150 kHz ZVS designs Select when cost sensitivity outweighs layout complexity and thermal margin is ≥5 °C/W higher
IPP60R600PFD7 Same die, TO-220FP package; RthJC = 2.5 °C/W; through-hole mounting Higher thermal performance but incompatible with automated SMT lines and slim enclosures Select for prototyping or low-volume industrial controls where manual assembly and heatsink access are available

Compared with IPAK60R600PFD7 and IPP60R600PFD7, IPLK60R600PFD7ATMA1 uniquely combines SMT compatibility, Kelvin source precision, and 2.80 °C/W thermal resistance-making it the only choice for production-grade, high-frequency, space-constrained consumer power supplies.

Availability

IPLK60R600PFD7ATMA1 is available at Aetrix Electronics and suitable for USB-C PD adapters, LED driver power stages, and smart home power supplies requiring stable component supply, full JEDEC industrial qualification, and long-term lifecycle support.

Supply support for IPLK60R600PFD7ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This part belongs to the CoolMOS™ PFD7 product line-designed specifically for cost-sensitive, high-efficiency AC-DC conversion in consumer electronics, emphasizing ease-of-use, integrated protection, and slim-form-factor thermal performance.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

The datasheet specifies 10.2 Ω gate resistor for characterization at 400 V and 1.7 A. For 600 V operation with 14 A pulse current, a 6.8–10 Ω non-inductive resistor is recommended to limit peak gate current to <2 A while maintaining <25 ns rise time. Ferrite beads are advised when paralleling multiple units to suppress gate oscillation.

Can IPLK60R600PFD7ATMA1 replace older CoolMOS™ P6 or C7 devices?

Yes-this PFD7 device offers lower RDS(on) × Qg (5.1 vs. 6.8 Ω·nC for P6) and improved Eoss (1.1 µJ vs. 1.8 µJ), enabling higher frequency operation without redesign. Pinout and gate threshold (4 V typical) are identical, allowing drop-in replacement in existing layouts with minor gate drive tuning.

Is the internal body diode suitable for synchronous rectification?

No-the internal body diode is optimized for commutation in ZVS topologies, not continuous conduction. Its 1.0 V forward voltage and 0.20 µC Qrr exceed typical synchronous rectifier MOSFET specs. Use external Schottky or dedicated SR controllers for secondary-side rectification.

What PCB layout practices maximize thermal performance?

Connect Pins 5–8 (drain) to ≥6 cm² of 70 µm copper on inner layer; isolate Kelvin source (Pin 3) from power ground with ≥0.3 mm clearance; place gate resistor within 2 mm of Pin 4; avoid vias under the exposed drain pad. Thermal simulation shows 2.80 °C/W junction-to-case is achievable only with full-pad solder coverage and no solder mask over copper.

IPLK60R600PFD7ATMA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
CoolMOS™ PFD7
Package/Case:
8-PowerTDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
600 V
Current - Continuous Drain (Id) @ 25°C:
7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
600mOhm @ 1.7A, 10V
Vgs(th) (Max) @ Id:
4.5V @ 80µA
Gate Charge (Qg) (Max) @ Vgs:
8.5 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
344 pF @ 400 V
FET Feature:
-
Power Dissipation (Max):
45W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-TDSON-8-52

IPLK60R600PFD7ATMA1 FAQ

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Please submit a Request for Quotation (RFQ) for IPLK60R600PFD7ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPLK60R600PFD7ATMA1 reliable?

The price and inventory of IPLK60R600PFD7ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPLK60R600PFD7ATMA1 is usually 5 days.

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We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPLK60R600PFD7ATMA1 transactions.

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IPLK60R600PFD7ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

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Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPLK60R600PFD7ATMA1?

For technical support, including IPLK60R600PFD7ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPLK60R600PFD7ATMA1 requirements.

6.How does Aetrix verify that IPLK60R600PFD7ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPLK60R600PFD7ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPLK60R600PFD7ATMA1 meets industry standards.

7.What is the process for return or replacement of IPLK60R600PFD7ATMA1?

All IPLK60R600PFD7ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPLK60R600PFD7ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPLK60R600PFD7ATMA1 part is unused and in its original packaging.

Return procedure for IPLK60R600PFD7ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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