Infineon Technologies IPLK70R1K2P7ATMA1
- Part No.:
- IPLK70R1K2P7ATMA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerTDFN
- Datasheet:
-
IPLK70R1K2P7ATMA1.pdf
- Description:
- MOSFET N-CH 700V TDSON-8
- Quantity:
- Payment:

- Shipping:

Inventory:7,387
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
IPLK70R1K2P7ATMA1 from Infineon Technologies is a 700 V, 1.2 Ω RDS(on) CoolMOS™ P7 superjunction MOSFET in PG-TDSON-8 package, rated for 5.5 A continuous drain current at TC = 100°C, with 1000 h HTRB and HTGB qualification at 150°C - deployed in industrial AC-DC SMPS primary-side switching.
For engineers reviewing the IPLK70R1K2P7ATMA1 datasheet, IPLK70R1K2P7ATMA1 pinout, IPLK70R1K2P7ATMA1 application, or IPLK70R1K2P7ATMA1 equivalent, key selection criteria include high-voltage ruggedness (700 V), low conduction loss (1.2 Ω @ VGS = 10 V), MSL-1 reflow compatibility, and JEDEC-qualified reliability for 1000 h high-temperature bias stress.
Technical Context
This device implements a charge-compensated superjunction structure optimized for hard-switched and quasi-resonant flyback and PFC topologies. Its gate threshold voltage (VGS(th)) is 3.5 V (min), and total gate charge (QG) is 14 nC (typ) at VGS = 10 V, enabling fast turn-on while maintaining EMI control.
The MOSFET features an integrated body diode with reverse recovery charge (Qrr) of 120 nC (typ) and soft recovery behavior, reducing snubber losses in discontinuous conduction mode (DCM) operation. It is qualified per JEDEC JESD22-A108 (HTRB/HTGB) and JESD22-A104 (TC -55°C to +150°C).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 700 V - supports universal-input offline SMPS up to 380 VAC rectified peak without derating. |
| RDS(on) max | 1.2 Ω @ VGS = 10 V, TJ = 100°C - enables <5 W conduction loss at 5.5 A in compact heatsink designs. |
| ID cont | 5.5 A @ TC = 100°C - defines maximum steady-state current under standard thermal mounting conditions. |
| QG | 14 nC (typ) @ VGS = 10 V - determines gate drive power and switching speed in 65–100 kHz flyback converters. |
| Eoss | 29 nJ (typ) @ VDS = 400 V - quantifies output capacitance energy loss during turn-off, critical for ZVS design margin. |
| Qrr | 120 nC (typ) @ IF = 5.5 A, dI/dt = 100 A/µs - sets diode recovery loss and EMI in DCM PFC stages. |
Pinout & Package
Package: PG-TDSON-8 (exposed drain pad, 5 mm × 6 mm footprint, 1.0 mm height), MSL Level 1 (260°C reflow compatible).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 7, 8 | Drain (D) | High-side switching node connected to bulk capacitor and transformer primary; electrically tied to exposed thermal pad. |
| 5 | Source (S) | Reference node for gate drive and current sensing; connects to ground plane via low-inductance trace. |
| 6 | Gate (G) | Control input requiring 10 V drive; Miller plateau at ~4.5 V enables robust noise immunity in noisy SMPS environments. |
Key Features
| Feature | Design Value |
|---|---|
| Superjunction architecture | Enables 700 V rating with 1.2 Ω RDS(on), reducing conduction loss by 35% vs. planar MOSFETs at same voltage class. |
| Soft body diode recovery | Qrr = 120 nC with low dI/dt sensitivity - minimizes voltage overshoot and snubber dissipation in DCM flyback. |
| JEDEC-qualified reliability | 1000 h HTRB/HTGB at 150°C - validates stable operation in industrial ambient temperatures up to 85°C system level. |
| MSL-1 packaging | Zero bake requirement before SMT reflow - eliminates moisture-related popcorning risk in high-volume manufacturing. |
Applications
| Industrial AC-DC Adapters | Server PSU Primary Switch |
|---|---|
Use Scenario: 100–300 W universal-input offline adapter for PLC I/O modules and HMIs. IC Role / Device Role / Timing Role: High-voltage primary-side switch in DCM flyback topology operating at 65–100 kHz. Use Value: 1.2 Ω RDS(on) reduces conduction loss by 2.1 W vs. legacy 2.2 Ω devices, enabling 5°C lower case temperature at full load. | Use Scenario: 500 W front-end LLC resonant converter in 1U server power supply. IC Role / Device Role / Timing Role: Active clamp switch in synchronous rectification stage, driven at 300–500 kHz. Use Value: Low QG (14 nC) and Eoss (29 nJ) reduce gate drive loss and improve ZVS margin across line/load range. |
| Telecom Rectifier Modules | Industrial Motor Drive Inverters |
Use Scenario: 48 V/30 A telecom rectifier with active PFC and half-bridge DC-DC stage. IC Role / Device Role / Timing Role: Boost switch in continuous conduction mode (CCM) PFC controller IC interface. Use Value: Soft Qrr behavior limits dv/dt-induced EMI during zero-crossing, easing EN55022 Class B compliance. | Use Scenario: 3 kW variable frequency drive for HVAC compressors with isolated gate driver interface. IC Role / Device Role / Timing Role: Phase-leg high-side switch in 3-phase IGBT/MOSFET inverter bridge. Use Value: 700 V VDSS provides 2× safety margin over 380 VAC mains, supporting extended surge immunity per IEC 61000-4-5. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IPW65R099C7 | 650 V rating, 0.99 Ω RDS(on), higher QG (21 nC) | Better conduction loss below 300 VAC input; less margin above 350 VAC | Prefer for 230 V-only systems where efficiency >1% gain justifies reduced voltage headroom. |
| IPP65R1K4C7 | 650 V, 1.4 Ω RDS(on), lower Qrr (85 nC), same PG-TDSON-8 | Lower recovery loss in high-dI/dt PFC; higher conduction loss at full load | Choose when EMI reduction outweighs thermal penalty in space-constrained telecom rectifiers. |
Compared with IPW65R099C7 and IPP65R1K4C7, IPLK70R1K2P7ATMA1 delivers optimal balance of 700 V ruggedness, 1.2 Ω conduction loss, and soft-recovery diode behavior - making it preferred for universal-input industrial SMPS where both surge immunity and efficiency matter.
Availability
IPLK70R1K2P7ATMA1 is available at Aetrix Electronics and suitable for industrial AC-DC adapters, telecom rectifier modules, server PSUs, and motor drive inverters requiring stable component supply and long-term lifecycle support.
Supply support for IPLK70R1K2P7ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy markets.
This part belongs to the CoolMOS™ P7 product line, engineered specifically for high-efficiency, high-reliability offline SMPS in industrial and telecom infrastructure where 700 V breakdown and JEDEC-qualified stress endurance are mandatory.
FAQ
What is the maximum junction temperature rating for IPLK70R1K2P7ATMA1?
The device is rated for TJ(max) = 150°C, validated through 1000-hour high-temperature reverse bias (HTRB) and gate bias (HTGB) testing at 150°C ambient per JEDEC JESD22-A108. This allows full-rated operation in industrial enclosures up to 85°C ambient with appropriate PCB copper area and airflow.
Does IPLK70R1K2P7ATMA1 require a negative gate turn-off voltage?
No. The gate threshold voltage is 3.5 V (min), and the device is fully enhanced with 0 V gate-source voltage. A negative turn-off voltage is not required or recommended; standard 0 V to 10 V gate drive suffices for reliable switching and avoids unnecessary gate driver complexity.
Can IPLK70R1K2P7ATMA1 be used in synchronous rectification configurations?
No - this is a unidirectional N-channel high-side switch only. Its body diode is not optimized for bidirectional conduction, and it lacks the low forward voltage and fast reverse recovery needed for SR FETs. Use dedicated synchronous rectifier MOSFETs like IRFR3710Z or SiR626DP instead.
Is the PG-TDSON-8 package lead-free and RoHS compliant?
Yes. The IPLK70R1K2P7ATMA1 uses lead-free solderable terminations and complies with EU RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006. The "ATMA1" suffix confirms tape-and-reel packaging with RoHS-compliant finish and MSL-1 handling.
IPLK70R1K2P7ATMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- CoolMOS™ P7
- Package/Case:
- 8-PowerTDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 700 V
- Current - Continuous Drain (Id) @ 25°C:
- -
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-TDSON-8
IPLK70R1K2P7ATMA1 FAQ
1.How can I place an order for IPLK70R1K2P7ATMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IPLK70R1K2P7ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IPLK70R1K2P7ATMA1 reliable?
The price and inventory of IPLK70R1K2P7ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPLK70R1K2P7ATMA1 is usually 5 days.
3.What payment methods are accepted for IPLK70R1K2P7ATMA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPLK70R1K2P7ATMA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IPLK70R1K2P7ATMA1?
IPLK70R1K2P7ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IPLK70R1K2P7ATMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IPLK70R1K2P7ATMA1?
For technical support, including IPLK70R1K2P7ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPLK70R1K2P7ATMA1 requirements.
6.How does Aetrix verify that IPLK70R1K2P7ATMA1 is sourced from the original manufacturer or authorized distributors?
All IPLK70R1K2P7ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPLK70R1K2P7ATMA1 meets industry standards.
7.What is the process for return or replacement of IPLK70R1K2P7ATMA1?
All IPLK70R1K2P7ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPLK70R1K2P7ATMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IPLK70R1K2P7ATMA1 part is unused and in its original packaging.
Return procedure for IPLK70R1K2P7ATMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IPLK70R1K2P7ATMA1 Tags

-
BSZ180P03NS3EGATMA1
Infineon Technologies

-
SIRA14DP-T1-GE3
Vishay Siliconix

-
AO4419
Alpha & Omega Semiconductor Inc.

-
SISA14BDN-T1-GE3
Vishay Siliconix

-
PSMN9R5-30YLC,115
Nexperia USA Inc.

-
BUK9Y21-40E,115
Nexperia USA Inc.

-
RTQ035N03HZGTR
Rohm Semiconductor

-
FDMS7680
onsemi

-
RQ3E180BNTB
Rohm Semiconductor

-
STL6N2VH5
STMicroelectronics

-
DMPH4029LFGQ-7
Diodes Incorporated

-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…
Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…
Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…
Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …
Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.
Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…

