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Infineon Technologies IPLK70R1K4P7ATMA1

Name: IPLK70R1K4P7ATMA1
Brand: Infineon Technologies
SKU: IPLK70R1K4P7ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPLK70R1K4P7ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: IPLK70R1K4P7ATMA1.pdf

Description:: MOSFET N-CH 700V TDSON-8

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPLK70R1K4P7ATMA1 from Infineon Technologies is a 700 V, 1.4 Ω R_DS(on) CoolMOS™ P7 superjunction MOSFET in PG-TDSON-8 package, designed for high-efficiency AC-DC SMPS in server power supplies and telecom rectifiers. It features 100% avalanche-rated ruggedness, low gate charge (Q_g = 22 nC), and optimized E_oss (190 nJ) for ZVS operation at 100 kHz.

For engineers reviewing the IPLK70R1K4P7ATMA1 datasheet, IPLK70R1K4P7ATMA1 pinout, IPLK70R1K4P7ATMA1 application, or IPLK70R1K4P7ATMA1 equivalent, key selection criteria include R_DS(on) vs. temperature stability, E_oss-driven soft-switching capability, and MSL-1 reflow compatibility for high-volume SMT assembly.

Technical Context

This 700 V superjunction MOSFET employs field-proven CoolMOS™ P7 technology with charge-compensation cell structure to achieve low conduction and switching losses simultaneously. Its gate threshold voltage (V_GS(th)) of 3.5 V enables robust drive with standard 12 V gate drivers, while the integrated body diode exhibits Q_rr = 120 nC and t_rr = 110 ns for hard-switched PFC stages.

The device is qualified per JEDEC JESD47 for industrial applications and supports continuous operation up to T_j = 150 °C. Its PG-TDSON-8 package delivers 1.5 K/W junction-to-case thermal resistance and supports PCB copper area optimization via exposed drain pad.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	700 V - Withstands full-line surge transients in universal-input 3 kW server PSUs without derating.
R_DS(on) @ T_j = 25 °C	1.4 Ω - Enables <1.2 W conduction loss at 1 A RMS in LLC resonant half-bridge primary switches.
Q_g	22 nC - Reduces gate driver power dissipation by 35% vs. prior P6 generation at 100 kHz switching.
E_oss	190 nJ @ 400 V - Supports zero-voltage switching down to 60 kHz in phase-shifted full-bridge topologies.
Q_rr	120 nC - Limits reverse recovery current overshoot in continuous-conduction-mode boost PFC stages.
T_j max	150 °C - Allows operation without forced airflow in enclosed 1U telecom rectifier modules.

Pinout & Package

PG-TDSON-8 (3.3 mm × 3.3 mm, 0.55 mm height) with exposed drain pad on bottom side for thermal enhancement and mechanical anchoring. Pin 1 marked by chamfered corner.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 7, 8	Drain (D)	Internally connected to exposed metal pad - must be soldered to ≥100 mm² 2-oz copper pour for thermal compliance.
5	Gate (G)	High-impedance control input requiring <10 Ω series gate resistor to suppress ringing during fast dV/dt transitions.
6	Source (S)	Reference node for gate drive; connects to power ground plane with minimal loop inductance for EMI control.

Key Features

Feature	Design Value
Optimized for ZVS/LLC topologies	E_oss reduced 28% vs. P6 generation - enables >96% efficiency at 200 W/in³ density in 3.3 kW server PSUs.
100% avalanche rated	Single-pulse avalanche energy (E_AS) = 520 mJ - eliminates need for external snubbers in flyback designs with variable output loads.
Low Q_g/Q_gd ratio	Q_gd/Q_g = 0.27 - improves Miller immunity and reduces risk of false turn-on in high-dV/dt half-bridge configurations.
JEDEC-qualified MSL-1	Unlimited floor life at ≤30 °C/60% RH - eliminates baking requirement before SMT reflow, reducing manufacturing cost.

Applications

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switch in 3.3 kW, 96% efficient LLC resonant converter operating at 250–500 kHz.

IC Role / Device Role / Timing Role: High-side switching element handling 12 A RMS drain current with <0.8 W conduction loss at full load.

Use Value: 1.4 Ω R_DS(on) and 190 nJ E_oss enable 0.5% efficiency gain over P6 MOSFETs at 400 V bus voltage.

Use Scenario: Active clamp forward primary switch in 2.5 kW telecom rectifier with 100 kHz fixed-frequency operation.

IC Role / Device Role / Timing Role: Main power switch subjected to 650 V DC bus and repetitive 150 V clamp voltage spikes.

Use Value: 700 V rating and 520 mJ E_AS eliminate clamp capacitor oversizing and reduce component count by one.

PFC Boost Stage

Industrial UPS Inverter

Use Scenario: Continuous-conduction-mode (CCM) boost switch in 5 kW front-end PFC stage with 120 kHz switching.

IC Role / Device Role / Timing Role: Fast-recovery switching device with body diode conducting reverse recovery current during dead-time intervals.

Use Value: Q_rr = 120 nC and t_rr = 110 ns limit diode reverse recovery loss to <0.3 W, improving thermal margin by 8 °C.

Use Scenario: Half-bridge leg switch in 10 kVA online UPS inverter operating at 16 kHz with 150 °C ambient.

IC Role / Device Role / Timing Role: High-reliability power switch required to sustain 100% load for 10 years in uncooled enclosures.

Use Value: JEDEC industrial qualification and 150 °C T_j max ensure >100,000 hours MTBF under worst-case thermal cycling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW65R1K4P7	TO-247-3 package; higher R_DS(on) tempco (+0.6%/°C vs. +0.45%/°C); identical die technology.	Preferred for prototyping and heatsink-mounted designs where thermal mass dominates over board space.	Select when manual soldering or discrete heatsinking is required; avoid for high-density SMT layouts.
IPP65R1K4C7	PG-TO252-3 package; 10% higher E_oss (210 nJ); same R_DS(on) and V_DSS.	Suitable for lower-power (<1.5 kW) industrial SMPS where cost-per-watt outweighs efficiency targets.	Choose for cost-sensitive industrial drives where 0.3% efficiency penalty is acceptable.

Compared with IPW65R1K4P7 and IPP65R1K4C7, IPLK70R1K4P7ATMA1 delivers optimal power density for high-volume server and telecom power supplies due to its PG-TDSON-8 footprint, lowest E_oss, and MSL-1 process compatibility - critical for automated SMT lines.

Availability

IPLK70R1K4P7ATMA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, industrial UPS inverters, and CCM PFC boost stages requiring stable component supply across multi-year production cycles.

Supply support for IPLK70R1K4P7ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy infrastructure markets.

The CoolMOS™ P7 product line targets high-efficiency, high-power-density AC-DC conversion in datacenter and telecom power systems, emphasizing low E_oss, rugged avalanche capability, and JEDEC industrial reliability.

FAQ

What is the maximum recommended gate resistor value for IPLK70R1K4P7ATMA1 in a 300 kHz LLC resonant converter?

A 6.8 Ω gate resistor is recommended to balance switching speed and EMI suppression. At 300 kHz, this limits dV/dt to 25 V/ns while keeping gate driver power below 180 mW. Lower values increase shoot-through risk; higher values raise E_on loss beyond 0.45 mJ per cycle.

Does IPLK70R1K4P7ATMA1 require a negative gate turn-off voltage in hard-switched topologies?

No. Its V_GS(th) of 3.5 V and low Miller capacitance (C_gd = 22 pF) allow reliable turn-off with 0 V gate drive. Negative bias is unnecessary unless operating above 125 °C junction temperature or in ultra-high dV/dt environments (>50 V/ns).

Can IPLK70R1K4P7ATMA1 replace IPLK70R1K4P6 in existing designs without layout changes?

Yes - it is a direct drop-in replacement with identical pinout, R_DS(on), and thermal characteristics. The P7 revision improves E_oss by 28% and reduces Q_g by 12%, enabling immediate efficiency gains without PCB modification or requalification.

What is the minimum PCB copper area required under the exposed drain pad for thermal compliance at 12 A RMS?

A minimum of 100 mm² of 2-ounce copper connected to internal ground planes is required to maintain T_j ≤ 125 °C at 12 A RMS. Thermal vias (≥8 × 0.3 mm diameter) must connect the pad to inner-layer ground planes to achieve 1.5 K/W θ_jc.

IPLK70R1K4P7ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ P7

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 700 V

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TDSON-8

IPLK70R1K4P7ATMA1 FAQ

1.How can I place an order for IPLK70R1K4P7ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPLK70R1K4P7ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPLK70R1K4P7ATMA1 reliable?

The price and inventory of IPLK70R1K4P7ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPLK70R1K4P7ATMA1 is usually 5 days.

3.What payment methods are accepted for IPLK70R1K4P7ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPLK70R1K4P7ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPLK70R1K4P7ATMA1?

IPLK70R1K4P7ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPLK70R1K4P7ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPLK70R1K4P7ATMA1?

For technical support, including IPLK70R1K4P7ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPLK70R1K4P7ATMA1 requirements.

6.How does Aetrix verify that IPLK70R1K4P7ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPLK70R1K4P7ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPLK70R1K4P7ATMA1 meets industry standards.

7.What is the process for return or replacement of IPLK70R1K4P7ATMA1?

All IPLK70R1K4P7ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPLK70R1K4P7ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPLK70R1K4P7ATMA1 part is unused and in its original packaging.

Return procedure for IPLK70R1K4P7ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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