Infineon Technologies IPLK70R900P7ATMA1

Overview

IPLK70R900P7ATMA1 from Infineon Technologies is a 700 V, 0.9 Ω R_DS(on) CoolMOS™ P7 superjunction power MOSFET in ThinPAK 5x6 package, featuring Kelvin source pinout, integrated ESD protection (HBM Class 1C), and optimized for high-frequency flyback converters in AC/DC adapters and chargers.

For engineers reviewing the IPLK70R900P7ATMA1 datasheet, IPLK70R900P7ATMA1 pinout, IPLK70R900P7ATMA1 application, or IPLK70R900P7ATMA1 equivalent, key selection criteria include its 6.8 nC total gate charge, 0.9 µJ E_oss at 400 V, 12.8 A pulsed drain current, and thermal resistance of 3.9 °C/W (junction-to-case), critical for slim, high-efficiency power supply designs.

Technical Context

This MOSFET implements Infineon's CoolMOS™ P7 superjunction architecture with split-source Kelvin configuration to minimize gate loop inductance and suppress oscillation during fast switching. Its low R_DS(on) × Q_g figure-of-merit (0.9 Ω × 6.8 nC) enables high efficiency at 100–300 kHz switching frequencies typical in compact offline SMPS.

The device integrates an ESD diode (HBM Class 1C) and body diode with 298 ns reverse recovery time and 0.7 µC Q_rr, supporting quasi-resonant and CCM flyback operation while maintaining dv/dt ruggedness up to 100 V/ns in hard-switched conditions.

Key Specifications

Pinout & Package

ThinPAK 5x6 SMD package (7.5 mm × 6.0 mm × 0.9 mm), surface-mount, lead-free, MSL1 rated. Features isolated Kelvin source terminal for accurate gate control and reduced switching losses.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage flyback switch applications.

Compared with IPD70R900P7SAUMA1 and IPP65R950C7XKSA1, IPLK70R900P7ATMA1 delivers superior power density via its ThinPAK 5x6 footprint and Kelvin source, enabling smaller adapters with higher efficiency at 200+ kHz-critical for next-generation USB-C PD designs.

Availability

IPLK70R900P7ATMA1 is available at Aetrix Electronics and suitable for USB-C wall adapters, LED driver power supplies, smartphone chargers, and TV standby power supplies requiring stable component supply, JEDEC-qualified reliability, and high-volume manufacturability.

Supply support for IPLK70R900P7ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This part belongs to the CoolMOS™ P7 superjunction MOSFET product line, engineered specifically for cost-sensitive, high-efficiency offline SMPS in consumer electronics-including adapters, chargers, lighting, and displays-where slim form factor and >90% efficiency are mandatory.

FAQ

What is the maximum recommended gate resistor value for stable switching?

The datasheet specifies 5.3 Ω for all dynamic timing measurements (e.g., t_r = 4.7 ns). Using >10 Ω increases switching time and E_on/E_off, risking thermal overstress at >150 kHz. For noise immunity in noisy environments, add a 100 Ω gate stopper close to the package, but keep the main series resistor ≤5.3 Ω.

Can IPLK70R900P7ATMA1 be paralleled with identical units?

Yes, but only with gate ferrite beads (e.g., 600 Ω @ 100 MHz) on each gate line to suppress oscillation, and individual gate resistors. The Kelvin source configuration improves current sharing accuracy, but mismatched PCB trace inductance remains a risk-layout symmetry is mandatory per Infineon AN-2017-07.

Does the internal body diode support ZVS operation in QR flyback?

Yes-the body diode has 298 ns t_rr and 7 A I_rrm, enabling zero-voltage switching in quasi-resonant flyback when paired with appropriate transformer leakage inductance (5 µH typical). However, its soft recovery is less ideal than dedicated SiC diodes for >300 kHz operation.

Is the ThinPAK 5x6 package compatible with standard reflow profiles?

Yes-it is MSL1 rated and qualified for peak reflow temperatures up to 260 °C (per J-STD-020). Use standard lead-free profile with ramp rate ≤3 °C/s, peak hold at 245–260 °C for 20–40 s, and avoid thermal shock from rapid cooling to prevent solder joint voiding in the exposed drain paddle.