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Infineon Technologies IPLK80R1K2P7ATMA1

Part No.:
IPLK80R1K2P7ATMA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
8-PowerTDFN
Datasheet:
AetrixIPLK80R1K2P7ATMA1.pdf
Description:
MOSFET 800V TDSON-8
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,872

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Product details

Overview

IPLK80R1K2P7ATMA1 from Infineon is an 800V superjunction N-channel MOSFET in ThinPAK 5x6 package, featuring Kelvin source configuration, 1.2 Ω max RDS(on) at 10 V VGS, 11 nC total gate charge, and integrated Zener ESD protection. It serves as a high-voltage switching device in flyback converters for low-power AC/DC adapters and chargers.

For engineers reviewing the IPLK80R1K2P7ATMA1 datasheet, IPLK80R1K2P7ATMA1 pinout, IPLK80R1K2P7ATMA1 application, or IPLK80R1K2P7ATMA1 equivalent, key selection criteria include its 3 V gate threshold with ±0.5 V variation, 800 V VDS rating, Kelvin-source layout for accurate current sensing, and JEDEC-qualified industrial reliability.

Technical Context

This CoolMOS™ P7 device uses charge compensation technology to achieve best-in-class figure-of-merit (RDS(on) × Eoss) of 1.2 Ω × 1.0 µJ. Its internal Kelvin source (Pin 3) separates sense and power return paths, enabling precise gate drive control and minimizing source inductance effects during fast switching.

The MOSFET integrates a Zener diode for ESD protection (HBM Class 2), supports hard and soft switching topologies, and exhibits 100 V/ns dv/dt ruggedness. Thermal resistance is 2.9 °C/W (junction-to-case), optimized for PCB-mounted thermal management with 6 cm² copper area.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 800 V - Withstands full mains-referenced DC link voltages up to 800 V in offline SMPS designs.
RDS(on), max 1.2 Ω @ Tj=25°C - Enables low conduction loss in 4.5 A continuous drain applications.
Qg, typ 11 nC - Reduces gate driver power requirement and enables efficient 100+ kHz switching.
VGS(th), typ 3 V with ±0.5 V variation - Ensures consistent turn-on across temperature and production lot.
Eoss @ 500 V 1.0 µJ - Low output energy reduces turn-off losses and improves light-load efficiency.
Ciss, typ 300 pF - Supports stable gate drive design with minimal Miller feedback in flyback circuits.
Tj max 150 °C - Rated for continuous operation in industrial ambient environments up to 100 °C case temperature.

Pinout & Package

ThinPAK 5x6 surface-mount package with exposed drain pad for thermal performance. Pin numbering follows standard top-view orientation: Pins 5–8 = Drain (common), Pin 4 = Gate, Pin 3 = Kelvin Source (sense), Pins 1–2 = Power Source (return).

Pin/Terminal Circuit Role Design Meaning
1,2 Power Source Main current return path; carries full load current to ground plane.
3 Kelvin Source Dedicated low-inductance sense node for gate driver reference; not interchangeable with Pins 1–2.
4 Gate Control input; driven by isolated gate driver with recommended resistor placement at driver source.
5–8 Drain High-voltage switch node; connected to primary winding and bulk capacitor in flyback topology.

Key Features

Feature Design Value
Integrated Zener ESD protection HBM Class 2 (≥2 kV) - Reduces external protection components and field failure risk.
Kelvin source configuration Separate sense and power source terminals - Eliminates source inductance impact on gate control loop stability.
Low VGS(th) variation ±0.5 V tolerance - Enables reliable parallel operation without individual gate bias trimming.
Optimized dynamic parameters Ciss/Coss ratio and Qgd/Qg = 4.5/11 ≈ 41% - Improves switching speed control and reduces voltage overshoot.
JEDEC industrial qualification Qualified per JESD47 - Validated for long-term reliability in uncontrolled ambient conditions.

Applications

USB-C PD Adapters Smartphone Wall Chargers

Use Scenario: 30–65 W offline flyback converter operating at 65–130 kHz with quasi-resonant control.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch regulating energy transfer via duty cycle modulation.

Use Value: 1.2 Ω RDS(on) and 1.0 µJ Eoss enable >90% efficiency at 230 VAC input while meeting CoC Tier 2 requirements.

Use Scenario: Compact 18–25 W universal-input charger with integrated synchronous rectification feedback.

IC Role / Device Role / Timing Role: Main switching transistor handling peak currents up to 11 A in discontinuous conduction mode.

Use Value: 3 V VGS(th) ensures robust turn-on with low-voltage gate drivers, reducing BOM cost versus higher-threshold alternatives.

Industrial IoT Power Supplies LED Driver Auxiliary Supplies

Use Scenario: DIN-rail mounted 12 V/1 A auxiliary supply for PLC I/O modules operating continuously at 60 °C ambient.

IC Role / Device Role / Timing Role: High-side switch in self-oscillating flyback with integrated overtemperature protection.

Use Value: 150 °C Tj max and 2.9 °C/W RthJC support derating-free operation under sustained load and elevated ambient.

Use Scenario: Isolated 5 V/0.5 A standby supply powering LED driver MCU and communication interface.

IC Role / Device Role / Timing Role: Low-duty-cycle switching element activated only during system wake-up events.

Use Value: 10 mJ single-pulse avalanche energy rating provides margin against line transients and startup surges.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage flyback switching applications.

Alternative Part Technical Difference Application Difference Selection Advice
IPAK80R1K2P7 Same die, DPAK-3L package; no Kelvin source; RDS(on) identical but higher source inductance. Lacks Kelvin sensing; unsuitable for tightly regulated or paralleled designs requiring precise gate control. Select when board space permits larger DPAK and Kelvin-source benefits are unnecessary.
IPP65R1K2CFD7 650V rating, TO-220FP package, 1.2 Ω RDS(on), no Kelvin source, CFD7 body diode. Lower voltage rating limits use to 230 VAC-only designs; improved diode recovery but reduced safety margin. Choose for cost-sensitive 650V systems where 800V margin is not required and TO-220 mounting is preferred.

Compared with IPAK80R1K2P7 and IPP65R1K2CFD7, IPLK80R1K2P7ATMA1 uniquely delivers 800V capability with Kelvin-source precision in a compact SMD footprint-enabling higher power density, tighter regulation, and simplified EMI filtering in universal-input adapters.

Availability

IPLK80R1K2P7ATMA1 is available at Aetrix Electronics and suitable for USB-C PD adapters, smartphone wall chargers, and industrial IoT power supplies requiring stable component supply, long-lifecycle assurance, and JEDEC-qualified reliability.

Supply support for IPLK80R1K2P7ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to the CoolMOS™ P7 superjunction MOSFET product line, engineered specifically for high-efficiency, high-density offline SMPS in consumer and industrial power conversion.

FAQ

What is the purpose of the Kelvin source pin (Pin 3) on IPLK80R1K2P7ATMA1?

Pin 3 is the Kelvin source terminal, providing a dedicated low-inductance connection for gate driver reference and current sensing. It must be routed separately from the main source pins (1 and 2) to avoid voltage drop errors in the gate loop. Interchanging it with Pins 1–2 causes unstable switching and potential device failure.

Can IPLK80R1K2P7ATMA1 be used in continuous conduction mode (CCM) flyback designs?

Yes-it supports CCM operation up to 4.5 A continuous drain current at 25°C case temperature. Derating is required above 25°C; at 100°C case, rated ID drops to 3.1 A. Its low Qg and optimized Coss make it suitable for high-frequency CCM designs with active clamp or QR control.

Does IPLK80R1K2P7ATMA1 require external gate resistors for paralleling?

Yes-when paralleling multiple units, Infineon recommends placing individual gate resistors at the driver source (not at the gate pin) to minimize loop inductance and ensure balanced turn-on. The internal gate resistance is 1.5 Ω, but external series resistance is needed for stability and current sharing.

Is the internal body diode suitable for synchronous rectification in secondary-side applications?

No-the internal body diode is optimized for freewheeling, not synchronous rectification. Its reverse recovery charge (Qrr = 4.4 µC) and time (trr = 750 ns) are higher than dedicated SR MOSFETs. For secondary-side synchronous rectification, use a dedicated low-VF, low-Qrr MOSFET instead.

IPLK80R1K2P7ATMA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
CoolMOS™ P7
Package/Case:
8-PowerTDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
-
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
800 V
Current - Continuous Drain (Id) @ 25°C:
-
Drive Voltage (Max Rds On, Min Rds On):
-
Rds On (Max) @ Id, Vgs:
-
Vgs(th) (Max) @ Id:
-
Gate Charge (Qg) (Max) @ Vgs:
-
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
-
FET Feature:
-
Power Dissipation (Max):
-
Operating Temperature:
-
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-TDSON-8

IPLK80R1K2P7ATMA1 FAQ

1.How can I place an order for IPLK80R1K2P7ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPLK80R1K2P7ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

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The price and inventory of IPLK80R1K2P7ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPLK80R1K2P7ATMA1 is usually 5 days.

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IPLK80R1K2P7ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPLK80R1K2P7ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPLK80R1K2P7ATMA1?

For technical support, including IPLK80R1K2P7ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPLK80R1K2P7ATMA1 requirements.

6.How does Aetrix verify that IPLK80R1K2P7ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPLK80R1K2P7ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPLK80R1K2P7ATMA1 meets industry standards.

7.What is the process for return or replacement of IPLK80R1K2P7ATMA1?

All IPLK80R1K2P7ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPLK80R1K2P7ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPLK80R1K2P7ATMA1 part is unused and in its original packaging.

Return procedure for IPLK80R1K2P7ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IPLK80R1K2P7ATMA1 Tags

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