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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPLK80R1K4P7ATMA1

Name: IPLK80R1K4P7ATMA1
Brand: Infineon Technologies
SKU: IPLK80R1K4P7ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPLK80R1K4P7ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: IPLK80R1K4P7ATMA1.pdf

Description:: MOSFET 800V TDSON-8

Quantity:: RFQ Add To RFQ list

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Inventory:3,510

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Product details

Overview

IPLK80R1K4P7ATMA1 from Infineon is an 800V superjunction N-channel MOSFET in ThinPAK 5x6 package with Kelvin source configuration, featuring R_DS(on) max 1.4 Ω at V_GS = 10 V, Q_g typ 10 nC, and integrated Zener ESD protection (HBM Class 2). It delivers low E_oss (0.9 µJ @ 500 V) and tight V_GS(th) (3 V ±0.5 V), optimized for high-efficiency flyback converters in low-power chargers and adapters.

For engineers reviewing the IPLK80R1K4P7ATMA1 datasheet, IPLK80R1K4P7ATMA1 pinout, IPLK80R1K4P7ATMA1 application, or IPLK80R1K4P7ATMA1 equivalent, key selection criteria include its Kelvin-source layout for accurate gate drive control, dv/dt ruggedness (100 V/ns), and thermal resistance (R_thJC = 3.4 °C/W), critical for stable operation in compact, thermally constrained AC/DC designs.

Technical Context

This CoolMOS™ P7 device uses charge compensation technology to achieve best-in-class figure-of-merit (R_DS(on) × E_oss) among 800V superjunction MOSFETs. Its internal Kelvin source (Pin 3) separates sensing from power return, enabling precise gate voltage control independent of source inductance during switching transitions.

The integrated Zener diode provides on-chip ESD protection (HBM Class 2), while its 100 V/ns dv/dt ruggedness ensures reliable operation under fast voltage transients in hard-switched topologies. The device is fully qualified per JEDEC for industrial applications and supports parallel operation with gate resistor placement on driver-side source.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	800 V - Withstands DC link voltages up to 800 V in offline SMPS without derating.
R_DS(on), max	1.4 Ω @ V_GS = 10 V, T_j = 25°C - Enables low conduction loss in <4 A continuous drain current applications.
Q_g, typ	10 nC - Reduces gate drive power and simplifies driver selection for 65–100 kHz flyback designs.
E_oss	0.9 µJ @ 500 V - Low output energy enables efficient soft-switching behavior and reduced turn-off losses.
V_GS(th)	3 V ±0.5 V - Tight threshold distribution improves production yield and reduces gate drive margin requirements.
R_thJC	3.4 °C/W - Supports high power density by enabling effective heat transfer from junction to heatsink via drain pad.
ESD Class	HBM Class 2 - Integrated Zener protection mitigates assembly-line ESD failures without external components.

Pinout & Package

Package: ThinPAK 5×6 SMD, single-die MOSFET with exposed drain pad (Pins 5–8), Kelvin source (Pin 3), gate (Pin 4), and main source (Pins 1–2). Not interchangeable: source and Kelvin source pins serve distinct roles and must not be swapped.

Pin/Terminal	Circuit Role	Design Meaning
Pins 1, 2	Main Source	Carries full load current return path; connects to PCB ground plane for thermal and electrical conduction.
Pin 3	Kelvin Source	Provides dedicated low-inductance feedback path to gate driver for accurate V_GS regulation during switching.
Pin 4	Gate	Controls channel conduction; requires low-impedance drive due to 10 nC total gate charge.
Pins 5–8	Drain	Exposed copper pad for high-current DC link connection and primary thermal dissipation path to PCB.

Key Features

Feature	Design Value
Kelvin source configuration	Enables stable gate drive under high di/dt by eliminating source inductance impact on V_GS control loop.
Integrated Zener ESD protection	Eliminates need for external gate protection components, reducing BOM count and board area in charger designs.
Tight V_GS(th) tolerance (±0.5 V)	Reduces gate drive design margin and improves consistency across production batches in multi-unit OEM assemblies.
Low C_iss (250 pF) and C_oss (6.5 pF)	Minimizes capacitive switching losses and improves controllability in high-frequency flyback topologies.
JEDEC industrial qualification	Validated for continuous operation from –55°C to +150°C ambient, supporting long-lifecycle industrial power supplies.

Applications

USB-C Wall Charger

Smart Home Power Adapter

Use Scenario: 30 W USB-C PD adapter operating in discontinuous conduction mode (DCM) flyback with 65 kHz switching frequency and universal AC input (90–264 VAC).

IC Role / Device Role / Timing Role: Primary-side high-voltage switch regulating energy transfer into secondary winding; operates as synchronous rectifier driver interface in some configurations.

Use Value: 1.4 Ω R_DS(on) and 0.9 µJ E_oss reduce no-load power and improve efficiency across load range, meeting DOE VI and CoC Tier 2 standards.

Use Scenario: 24 W isolated AC/DC module powering Wi-Fi routers, smart speakers, and IoT hubs with tight space constraints and thermal limits.

IC Role / Device Role / Timing Role: Main power switch in quasi-resonant (QR) flyback topology; handles peak drain voltage up to 720 V during line surges.

Use Value: Kelvin source and 100 V/ns dv/dt rating prevent false triggering during transient overvoltage events, improving field reliability in unregulated mains environments.

Industrial Sensor Power Supply

LED Driver Auxiliary Supply

Use Scenario: 15 W auxiliary supply for PLC I/O modules, operating continuously at 70°C ambient with >10-year lifetime requirement.

IC Role / Device Role / Timing Role: Primary-side switch in fixed-frequency flyback delivering isolated 12 V/1.25 A output with reinforced insulation.

Use Value: R_thJC = 3.4 °C/W and JEDEC industrial qualification ensure thermal stability and long-term parametric drift within spec over full temperature range.

Use Scenario: 12 W constant-voltage auxiliary supply for smart LED drivers, co-located with high-power LED stage on same PCB.

IC Role / Device Role / Timing Role: High-side switch in flyback converter providing isolated bias for gate drivers and MCU logic rails.

Use Value: Integrated ESD protection (HBM Class 2) prevents damage during automated assembly, reducing post-solder test failures in high-volume LED lighting production.

Equivalent & Alternatives

The following parts are listed as comparable options for similar 800V superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPAK80R1K4P7XKSA1	DPAK package (TO-252), no Kelvin source, higher R_thJA (62 °C/W vs. 35–45 °C/W), same R_DS(on) and Q_g.	Limited to lower-power (<20 W) or forced-air-cooled designs; lacks Kelvin source for precision gate control.	Select when cost-sensitive DPAK footprint is required and gate drive stability under high di/dt is not critical.
IPW80R1K4P7FKSA1	TO-220FP package, no Kelvin source, higher R_thJC (4.5 °C/W), identical electrical specs but larger thermal mass.	Suitable for prototyping or low-volume industrial supplies where heatsink mounting is preferred over SMD thermal pads.	Choose for manual assembly or legacy board layouts requiring through-hole mounting and discrete heatsinking.

Compared with IPAK80R1K4P7XKSA1 and IPW80R1K4P7FKSA1, IPLK80R1K4P7ATMA1 offers superior thermal performance in SMD form factor and unique Kelvin-source capability-critical for high-density, high-reliability flyback designs where gate drive fidelity and board-level thermal management are prioritized.

Availability

IPLK80R1K4P7ATMA1 is available at Aetrix Electronics and suitable for USB-C wall chargers, smart home power adapters, and industrial sensor power supplies requiring stable component supply, long-lifecycle support, and consistent parametric performance across manufacturing lots.

Supply support for IPLK80R1K4P7ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global R&D and manufacturing infrastructure.

This part belongs to the CoolMOS™ P7 series-a family of 800V superjunction MOSFETs engineered specifically for high-efficiency, high-power-density offline SMPS in consumer and industrial charging applications.

FAQ

What is the purpose of the Kelvin source pin (Pin 3) on IPLK80R1K4P7ATMA1?

The Kelvin source pin (Pin 3) provides a dedicated low-inductance return path for the gate driver's reference, decoupling gate control from main source current flow. This prevents V_GS distortion caused by source inductance during high di/dt switching, ensuring accurate turn-on/turn-off timing and preventing spurious oscillation or shoot-through in flyback controllers.

Can IPLK80R1K4P7ATMA1 be paralleled with other MOSFETs, and what layout guidance applies?

Yes, it supports paralleling-but gate resistors must be placed on the driver-side source (not gate) to balance dynamic current sharing. The Kelvin source must remain isolated from main source traces; mixing these paths invalidates the gate control benefit and risks instability. PCB layout must maintain symmetric thermal and electrical paths for all paralleled units to avoid current imbalance.

Is the internal body diode suitable for synchronous rectification in flyback topologies?

No-the internal body diode is not rated for continuous synchronous rectification. Its reverse recovery charge (Q_rr = 5.7 µC) and trr (710 ns) indicate slow recovery unsuitable for high-frequency SR control. This device is intended solely as a primary-side switch; secondary-side synchronous rectification requires dedicated low-V_F, fast-recovery MOSFETs or controllers.

What is the maximum recommended gate resistor value for driving IPLK80R1K4P7ATMA1 in a 65 kHz flyback?

For 65 kHz operation with typical gate drivers (e.g., UCC28780), a gate resistor of 10–22 Ω is recommended. This balances switching speed (to minimize E_oss-dominated losses) against EMI and gate ringing. Values above 33 Ω increase turn-on time excessively, raising conduction loss; below 5 Ω may cause overshoot and require tighter layout control to suppress oscillation.

IPLK80R1K4P7ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ P7

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: -

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TDSON-8

IPLK80R1K4P7ATMA1 FAQ

1.How can I place an order for IPLK80R1K4P7ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPLK80R1K4P7ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPLK80R1K4P7ATMA1 reliable?

The price and inventory of IPLK80R1K4P7ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPLK80R1K4P7ATMA1 is usually 5 days.

3.What payment methods are accepted for IPLK80R1K4P7ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPLK80R1K4P7ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPLK80R1K4P7ATMA1?

IPLK80R1K4P7ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPLK80R1K4P7ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPLK80R1K4P7ATMA1?

For technical support, including IPLK80R1K4P7ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPLK80R1K4P7ATMA1 requirements.

6.How does Aetrix verify that IPLK80R1K4P7ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPLK80R1K4P7ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPLK80R1K4P7ATMA1 meets industry standards.

7.What is the process for return or replacement of IPLK80R1K4P7ATMA1?

All IPLK80R1K4P7ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPLK80R1K4P7ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPLK80R1K4P7ATMA1 part is unused and in its original packaging.

Return procedure for IPLK80R1K4P7ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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