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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPLK80R2K0P7ATMA1

Name: IPLK80R2K0P7ATMA1
Brand: Infineon Technologies
SKU: IPLK80R2K0P7ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPLK80R2K0P7ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: IPLK80R2K0P7ATMA1.pdf

Description:: MOSFET 800V TDSON-8

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPLK80R2K0P7ATMA1 from Infineon is an 800V superjunction N-channel MOSFET in ThinPAK 5x6 package, featuring Kelvin source configuration, R_DS(on) max 2.0 Ω at 10 V_GS, Q_g typ 9 nC, and integrated Zener ESD protection. It serves as a primary-side switching device in high-efficiency flyback converters for USB PD chargers up to 30 W.

For engineers reviewing the IPLK80R2K0P7ATMA1 datasheet, IPLK80R2K0P7ATMA1 pinout, IPLK80R2K0P7ATMA1 application, or IPLK80R2K0P7ATMA1 equivalent, key selection criteria include its 3 A continuous drain current at T_C = 25°C, 800 V blocking capability, low E_oss (0.85 µJ @ 500 V), 3 V gate threshold with ±0.5 V variation, and Kelvin source architecture enabling precise gate drive control in high-frequency hard-switching topologies.

Technical Context

This CoolMOS™ P7 device employs charge compensation technology with optimized cell pitch and trench depth to achieve best-in-class R_DS(on) × E_oss figure-of-merit. Its Kelvin source pin (Pin 3) separates sensing and power return paths, decoupling gate loop inductance from source inductance to suppress oscillation during fast switching.

The MOSFET integrates a robust body diode with t_rr = 650 ns and Q_rr = 3.2 µC at 400 V reverse voltage, and features 1C HBM ESD rating via on-chip Zener diode. Gate plateau voltage is 4.5 V, supporting reliable turn-on with standard 5 V logic drivers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	800 V - Supports universal AC input (85–265 V_AC) with ≥2× safety margin in offline flyback designs
R_DS(on), max	2.0 Ω @ T_j = 25°C - Enables low conduction loss in 3 A continuous operation at ambient temperatures ≤60°C
Q_g, typ	9 nC - Reduces gate driver power demand and enables >200 kHz switching without excessive driver heating
E_oss	0.85 µJ @ 500 V - Low output energy minimizes turn-off losses and improves efficiency in discontinuous conduction mode (DCM)
V_GS(th), typ	3 V with ±0.5 V variation - Ensures consistent turn-on across production lots and simplifies bias network design
Thermal R_thJC	4.5 °C/W - Allows 28 W power dissipation at T_C = 25°C, supporting compact heatsinkless PCB layouts

Pinout & Package

ThinPAK 5x6 SMD package (7.5 mm × 6.0 mm × 0.9 mm), thermally enhanced with exposed drain pad occupying Pins 5–8. Pin 3 is dedicated Kelvin source terminal; Pins 1–2 are main power source terminals. Gate (Pin 4) and Drain (Pins 5–8) are isolated by internal mold compound.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1, 2	Main Source	High-current return path for load current; must be routed with wide copper pour to minimize IR drop
Pin 3	Kelvin Source	Low-current sense node for gate driver feedback; requires separate trace to driver IC ground to avoid noise coupling
Pin 4	Gate	Control input; driven via series resistor (recommended on driver side) to damp ringing from parasitic inductance
Pins 5–8	Drain	High-voltage power input; electrically and thermally connected to exposed pad for optimal heat transfer to PCB

Key Features

Feature	Design Value
Integrated Zener ESD protection	1C HBM rating eliminates need for external TVS on gate, reducing BOM count and layout area
Kelvin source architecture	Enables stable gate drive under high di/dt conditions, preventing false turn-off during hard switching
Low C_iss/C_oss ratio	C_iss = 175 pF, C_oss = 4.0 pF - Improves Miller immunity and reduces gate drive energy requirement
Optimized for flyback topology	Specified E_oss, Q_rr, and t_rr values validated under 400 V DC-link and 50 A/µs commutation conditions

Applications

USB PD Wall Adapters

Industrial IoT Power Supplies

Use Scenario: 27 W USB-C charger operating in DCM flyback with 90–265 V_AC input and 9 V/3 A output.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch controlling energy transfer timing and regulating output via optocoupler feedback.

Use Value: 2.0 Ω R_DS(on) and 0.85 µJ E_oss enable >90% efficiency at full load while maintaining thermal rise <25°C on 4-layer FR4 PCB.

Use Scenario: DIN-rail mounted 24 V/1 A auxiliary supply powering PLC I/O modules in factory automation cabinets.

IC Role / Device Role / Timing Role: Isolated primary-side switch providing reinforced insulation barrier and meeting IEC 62368-1 creepage requirements.

Use Value: 800 V rating ensures 2× overvoltage margin against 300 V_DC surges per EN 61000-4-5, and Kelvin source supports stable operation under 100 kHz burst-mode light-load regulation.

Smart Home Hub Power

Medical Grade Low-Power SMPS

Use Scenario: Compact 12 V/1.5 A flyback converter inside Wi-Fi mesh node enclosure with strict EMI limits.

IC Role / Device Role / Timing Role: High-frequency switching element enabling spread-spectrum frequency jittering and low EMI filter component count.

Use Value: Low C_oss (4.0 pF) and controlled dv/dt (100 V/ns) reduce common-mode noise generation, easing CISPR-32 Class B compliance.

Use Scenario: 5 V/2 A isolated power supply for patient-monitoring front-end sensors requiring 2× MOPP isolation.

IC Role / Device Role / Timing Role: Safety-critical primary switch certified to JEDEC industrial qualification standards and supporting 15-year field reliability targets.

Use Value: Fully qualified per JEDEC JESD47 and JEP148, with guaranteed 150°C T_j operation and <10 ppm annual failure rate in medical-grade burn-in screening.

Equivalent & Alternatives

The following parts are listed as comparable options for similar 800 V superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPAK80R1K2P7	R_DS(on) max = 1.2 Ω, higher Q_g = 14 nC, same ThinPAK 5x6 package and Kelvin source	Better conduction loss but higher gate drive loss; suited for lower-frequency (<100 kHz), higher-power (≥45 W) designs	Select when optimizing for full-load efficiency over light-load performance and thermal footprint
IPW80R1K4P7	TO-220FP package, no Kelvin source, R_DS(on) max = 1.4 Ω, Q_g = 11 nC	Lacks Kelvin sensing; requires careful gate loop layout to avoid instability in high-dv/dt flyback; better for cost-sensitive non-miniaturized designs	Choose when board space is unconstrained and thermal management uses external heatsink

Compared with IPAK80R1K2P7 and IPW80R1K4P7, IPLK80R2K0P7ATMA1 delivers optimal balance of gate drive simplicity (low Q_g, Kelvin source), thermal performance (4.5 °C/W R_thJC), and system-level EMI control-making it the preferred choice for miniaturized, high-frequency, safety-certified flyback converters below 30 W.

Availability

IPLK80R2K0P7ATMA1 is available at Aetrix Electronics and suitable for USB PD adapters, industrial IoT power supplies, smart home hub power, and medical-grade low-power SMPS requiring stable component supply and long-term lifecycle support.

Supply support for IPLK80R2K0P7ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs, with global R&D and manufacturing infrastructure.

This device belongs to the CoolMOS™ P7 family-designed specifically for high-efficiency, high-density offline AC/DC conversion in consumer and industrial power supplies operating up to 30 W.

FAQ

What is the purpose of the Kelvin source pin (Pin 3) on IPLK80R2K0P7ATMA1?

The Kelvin source pin provides a dedicated low-current reference path for the gate driver's source node, isolating it from high di/dt power return currents flowing through Pins 1–2. This prevents voltage spikes induced by source inductance from falsely turning off the MOSFET during fast switching transitions, ensuring stable operation in high-frequency flyback converters.

Can IPLK80R2K0P7ATMA1 be paralleled with identical units?

Yes, but only with strict layout symmetry: matched gate resistor placement on the driver-side (not gate-side), individual ferrite beads on each gate line, and identical trace lengths from Kelvin source pins to driver ground. The datasheet explicitly warns that swapping main source (Pins 1–2) and Kelvin source (Pin 3) will cause malfunction and must be avoided.

Does IPLK80R2K0P7ATMA1 require an external gate resistor?

Yes-an external gate resistor is mandatory for stable switching. The recommended placement is between the driver IC output and the gate (Pin 4), not between gate and source. Typical values range from 10 Ω to 33 Ω depending on switching frequency and layout parasitics; values below 5 Ω risk gate oscillation due to low gate resistance and high dv/dt.

How does the integrated Zener ESD protection affect PCB layout?

The on-chip Zener diode provides 1C HBM ESD protection (≥1 kV), eliminating the need for external gate protection components. Layout must still maintain clean gate routing-avoid running gate traces near noisy nodes (e.g., drain or transformer windings)-and use short, direct connections to the driver IC to preserve the benefit of integrated protection without introducing coupling paths.

IPLK80R2K0P7ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ P7

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: -

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TDSON-8

IPLK80R2K0P7ATMA1 FAQ

1.How can I place an order for IPLK80R2K0P7ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPLK80R2K0P7ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPLK80R2K0P7ATMA1 reliable?

The price and inventory of IPLK80R2K0P7ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPLK80R2K0P7ATMA1 is usually 5 days.

3.What payment methods are accepted for IPLK80R2K0P7ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPLK80R2K0P7ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPLK80R2K0P7ATMA1?

IPLK80R2K0P7ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPLK80R2K0P7ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPLK80R2K0P7ATMA1?

For technical support, including IPLK80R2K0P7ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPLK80R2K0P7ATMA1 requirements.

6.How does Aetrix verify that IPLK80R2K0P7ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPLK80R2K0P7ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPLK80R2K0P7ATMA1 meets industry standards.

7.What is the process for return or replacement of IPLK80R2K0P7ATMA1?

All IPLK80R2K0P7ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPLK80R2K0P7ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPLK80R2K0P7ATMA1 part is unused and in its original packaging.

Return procedure for IPLK80R2K0P7ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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