Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPLK80R900P7ATMA1

Name: IPLK80R900P7ATMA1
Brand: Infineon Technologies
SKU: IPLK80R900P7ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IPLK80R900P7ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: IPLK80R900P7ATMA1.pdf

Description:: MOSFET 800V TDSON-8

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:2,159

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IPLK80R900P7ATMA1 from Infineon is an 800V superjunction N-channel MOSFET in ThinPAK 5x6 package, featuring R_DS(on) max 0.90 Ω, Q_g typ 15 nC, and V_GS(th) typ 3 V with ±0.5 V variation. It integrates Kelvin source and ESD-protected gate, optimized for hard/soft-switching flyback converters in low-power chargers and adapters.

For engineers reviewing the IPLK80R900P7ATMA1 datasheet, IPLK80R900P7ATMA1 pinout, IPLK80R900P7ATMA1 application, or IPLK80R900P7ATMA1 equivalent, key selection criteria include its 800V V_DS, low E_oss (1.4 µJ @ 500V), high dv/dt ruggedness (100 V/ns), and dedicated Kelvin source for accurate gate drive control in high-efficiency SMPS designs.

Technical Context

This CoolMOS™ P7 device employs superjunction architecture to achieve best-in-class figure-of-merit (R_DS(on) × E_oss) while maintaining tight V_GS(th) distribution (2.5–3.5 V) and low input/output capacitances (C_iss = 350 pF, C_oss = 6 pF). Its internal Zener-protected gate and Kelvin source configuration enable robust ESD immunity (HBM Class 2) and precise current-sensing capability.

The ThinPAK 5x6 package supports high thermal performance (R_thJC = 2.3 °C/W) and features isolated drain (pins 5–8), gate (pin 4), Kelvin source (pin 3), and main source (pins 1–2). The non-interchangeable source/sense-source pins enforce correct PCB layout to prevent malfunction during paralleling or high-frequency operation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	800 V - Enables direct use in 400 V DC-link applications with ≥2× voltage margin for surge and ringing.
R_DS(on), max	0.90 Ω @ T_j = 25°C - Delivers low conduction loss at 6 A continuous drain current (T_C = 25°C).
Q_g, typ	15 nC - Reduces gate drive power and enables fast switching with standard 13 V gate drivers.
E_oss	1.4 µJ @ 500 V - Low stored output energy minimizes turn-off losses in high-frequency flyback topologies.
V_GS(th), typ	3 V with ±0.5 V variation - Ensures consistent turn-on behavior across temperature and production lots.
dv/dt ruggedness	100 V/ns - Supports reliable operation in noisy, high-dv/dt environments without false triggering.
ESD rating	HBM Class 2 - Integrated Zener diode eliminates need for external gate protection in assembly.

Pinout & Package

ThinPAK 5x6 surface-mount package (5 mm × 6 mm × 0.9 mm), thermally enhanced with exposed drain pad. Pin numbering follows JEDEC MO-263AB outline; pins 5–8 are internally connected to drain, enabling low-inductance parallel connection.

Pin/Terminal	Circuit Role	Design Meaning
1, 2	Main Source	Carries full load current; connects to PCB ground plane for thermal and electrical return path.
3	Kelvin Source	Provides isolated sense path for gate driver feedback-must not be connected to main source or ground.
4	Gate	Control terminal for MOSFET switching; driven via series resistor referenced to Kelvin source for stable V_GS.
5–8	Drain	High-voltage power terminal; all four pins bonded to common drain metallization for low inductance and thermal spreading.

Key Features

Feature	Design Value
Best-in-class R_DS(on) × E_oss	Enables >90% efficiency in 30–65 W flyback adapters without active snubbers or complex gate tuning.
Integrated Zener ESD protection	Eliminates external gate protection components and reduces BOM count and assembly cost.
Kelvin source configuration	Allows precise gate-to-source voltage control under high di/dt, improving switching consistency and reducing shoot-through risk.
Tight V_GS(th) distribution (±0.5 V)	Reduces binning requirements and improves yield in mass production of universal-input AC/DC supplies.
Optimized for paralleling	Low gate resistance (1.4 Ω) and symmetric drain pinout simplify multi-device layouts with minimal gate loop inductance.

Applications

USB-C PD Charger

Industrial IoT Power Supply

Use Scenario: 45 W USB-C Power Delivery adapter operating at 100 kHz with quasi-resonant flyback topology.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch handling 400 V DC-link and delivering regulated 9/15/20 V outputs.

Use Value: Low E_oss and fast turn-off (t_f = 20 ns) reduce switching losses by 18% vs. prior-gen 800 V MOSFETs, enabling smaller heatsinks.

Use Scenario: DIN-rail mounted 24 V/2 A auxiliary supply for PLC I/O modules in factory automation.

IC Role / Device Role / Timing Role: Main switching element in isolated flyback converter meeting IEC 61000-4-5 surge immunity requirements.

Use Value: 100 V/ns dv/dt ruggedness prevents false turn-on during 2 kV surge events, eliminating need for additional clamping networks.

Smart Home Gateway Adapter

Medical Grade Wall Adapter

Use Scenario: Compact 15 W wall adapter powering Wi-Fi 6 gateways with no-fan cooling and <100 mW no-load consumption.

IC Role / Device Role / Timing Role: High-voltage switch in primary-side regulated flyback with integrated controller feedback.

Use Value: 3 V V_GS(th) enables reliable start-up down to 85 V_AC, supporting universal input range without auxiliary winding.

Use Scenario: 30 W Class II medical adapter certified to IEC 60601-1 with reinforced isolation and <250 µA patient leakage.

IC Role / Device Role / Timing Role: Primary-side switching transistor in transformer-isolated flyback with Y-capacitor constrained layout.

Use Value: HBM Class 2 ESD rating and fully qualified JEDEC industrial reliability ensure zero field returns due to gate oxide failure over 10-year service life.

Equivalent & Alternatives

The following parts are listed as comparable options for similar 800 V superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPAK80R900P7XKSA1	Same die, TO-252 (DPAK) package; higher R_thJA (62 °C/W), no Kelvin source.	Limited to lower-power (<25 W), non-paralleled designs where PCB space allows larger footprint.	Select when cost sensitivity outweighs efficiency targets and Kelvin sensing is unnecessary.
IPP65R950C7XKSA1	650 V rating, 0.95 Ω R_DS(on), no Kelvin source, higher Q_g (18 nC).	Suitable only for 230 V_AC-only inputs; requires derating for 400 V DC-link operation.	Choose only if system DC-link never exceeds 350 V and design prioritizes legacy compatibility over efficiency.

Compared with IPAK80R900P7XKSA1 and IPP65R950C7XKSA1, IPLK80R900P7ATMA1 delivers superior power density through its Kelvin source-enabled gate control, lower E_oss, and optimized thermal resistance-making it the preferred choice for compact, high-reliability 400 V DC-link flyback converters.

Availability

IPLK80R900P7ATMA1 is available at Aetrix Electronics and suitable for USB-C PD chargers, industrial IoT power supplies, smart home gateway adapters, and medical-grade wall adapters requiring stable component supply and long-term lifecycle support.

Supply support for IPLK80R900P7ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The CoolMOS™ P7 product line was engineered specifically for high-efficiency, high-reliability AC/DC conversion in consumer and industrial power supplies-emphasizing ease of use, low EMI, and robustness in real-world surge and thermal conditions.

FAQ

Can IPLK80R900P7ATMA1 be used without connecting the Kelvin source pin?

No. The Kelvin source (pin 3) must be connected directly to the gate driver's source reference node. Leaving it unconnected or tying it to main source (pins 1–2) disrupts gate control accuracy, causing inconsistent switching behavior and potential thermal runaway under load. This configuration is mandatory per Infineon's layout guidelines.

What is the maximum recommended gate resistor value for single-device operation?

For stable switching at 100 kHz with 13 V gate drive, a 10 Ω gate resistor is recommended. Higher values (>15 Ω) increase turn-on delay and reduce dv/dt immunity; lower values (<5 Ω) risk gate oscillation due to parasitic inductance in the Kelvin source loop. Layout-dependent optimization is required for >200 kHz operation.

Is IPLK80R900P7ATMA1 compliant with RoHS and REACH regulations?

Yes. IPLK80R900P7ATMA1 meets RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006, including SVHC screening. Lead-free reflow profile complies with J-STD-020D, with peak temperature ≤260 °C (MSL1 rating). Full compliance documentation is available via Infineon's product portal.

How does the internal body diode perform in synchronous rectification mode?

The integrated body diode has t_rr = 840 ns and Q_rr = 6.2 µC at 400 V reverse bias, making it unsuitable for synchronous rectification. It is designed solely for freewheeling in flyback operation. For SR applications, external Schottky or GaN FETs must be used on the secondary side.

IPLK80R900P7ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ P7

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: -

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TDSON-8

IPLK80R900P7ATMA1 FAQ

1.How can I place an order for IPLK80R900P7ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPLK80R900P7ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPLK80R900P7ATMA1 reliable?

The price and inventory of IPLK80R900P7ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPLK80R900P7ATMA1 is usually 5 days.

3.What payment methods are accepted for IPLK80R900P7ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPLK80R900P7ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPLK80R900P7ATMA1?

IPLK80R900P7ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPLK80R900P7ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPLK80R900P7ATMA1?

For technical support, including IPLK80R900P7ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPLK80R900P7ATMA1 requirements.

6.How does Aetrix verify that IPLK80R900P7ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPLK80R900P7ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPLK80R900P7ATMA1 meets industry standards.

7.What is the process for return or replacement of IPLK80R900P7ATMA1?

All IPLK80R900P7ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPLK80R900P7ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPLK80R900P7ATMA1 part is unused and in its original packaging.

Return procedure for IPLK80R900P7ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.