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Infineon Technologies IPN50R3K0CEATMA1
- Part No.:
- IPN50R3K0CEATMA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-261-4, TO-261AA
- Datasheet:
-
IPN50R3K0CEATMA1.pdf
- Description:
- MOSFET N-CH 500V 2.6A SOT223
- Quantity:
- Payment:
- Shipping:
Inventory:6,541
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Product details
Overview
IPN50R3K0CEATMA1 from Infineon Technologies is a 500 V, 3.0 Ω RDS(on) CoolMOS™ CE superjunction power MOSFET in PG-SOT223 package, rated for 2.6 A continuous drain current at TC = 25°C and optimized for high-efficiency, cost-sensitive offline SMPS in adapters and LED lighting. It delivers 4.3 nC total gate charge, 0.49 µJ output switching energy at 400 V, and supports fast commutation with 500 A/µs diode dI/dt capability.
For engineers reviewing the IPN50R3K0CEATMA1 datasheet, IPN50R3K0CEATMA1 pinout, IPN50R3K0CEATMA1 application, or IPN50R3K0CEATMA1 equivalent, key selection criteria include its low FOM (RDS(on) × Qg), high dv/dt ruggedness (50 V/ns), 150°C max junction temperature, and SOT223 thermal performance (RthJS = 25.4 °C/W).
Technical Context
This CoolMOS™ CE device implements a superjunction structure enabling high-voltage blocking (500 V V(BR)DSS) with significantly reduced conduction and switching losses versus planar MOSFETs. Its gate threshold voltage (2.5–3.5 V) and plateau voltage (5.3 V) support standard 12 V gate drive while maintaining noise immunity.
It integrates an intrinsic body diode with 99 ns reverse recovery time and 0.3 µC Qrr, enabling hard-switched flyback and buck-derived topologies. The device is characterized for operation up to 150°C with derated current and exhibits 18 mJ single-pulse avalanche energy at 50 V.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS max | 500 V - Supports 400 V DC-link designs with 25% margin for surge and ringing |
| RDS(on) max @ 150°C | 3.0 Ω - Enables thermally robust operation in compact, unventilated lighting adapters |
| Qg typ | 4.3 nC - Reduces gate driver power loss and enables use of low-cost, low-current drivers |
| Eoss @ 400 V | 0.49 µJ - Low stored output capacitance energy minimizes turn-on switching loss |
| dI/dt rating | 500 A/µs - Ensures reliable diode commutation in discontinuous conduction mode (DCM) flyback |
| RthJS | 25.4 °C/W - Enables direct PCB copper pad cooling without heatsink in ≤5 W applications |
| Avalanche EAS | 18 mJ - Provides single-pulse robustness against inductive switching transients |
Pinout & Package
Package: PG-SOT223 (standard SOT-223 outline with exposed drain pad for thermal conduction). Pin 1: Gate (G); Pin 2: Drain (D); Pin 3: Source (S).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Gate) | Control electrode | Low-impedance input requiring <5.3 Ω series gate resistor for stable switching; referenced to source |
| Pin 2 (Drain) | High-voltage power terminal | Connected to primary-side DC bus; electrically and thermally tied to large copper area on PCB |
| Pin 3 (Source) | Power return and reference node | Serves as gate drive reference and current sense point; must be low-inductance path to ground |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low figure-of-merit (RDS(on) × Qg) | 12.9 Ω·nC - Delivers best-in-class efficiency for 5–15 W offline SMPS without complex gate drive |
| High commutation ruggedness | 500 A/µs dI/dt + 15 V/ns reverse diode dv/dt - Enables reliable operation in DCM flyback without snubbers |
| Easy gate drive compatibility | VGS(th) = 2.5–3.5 V, Vplateau = 5.3 V - Works with standard 12 V logic-level drivers and avoids shoot-through risk |
| Pb-free and halogen-free construction | RoHS-compliant plating and mold compound - Meets IEC 61249-2-21 and JEDEC J-STD-020 MSL3 requirements |
Applications
| LED Driver (Non-Dimmable) | USB-C Adapter (≤30 W) |
|---|---|
|
Use Scenario: Constant-voltage LED driver for commercial downlights operating from 85–265 V AC input. IC Role / Device Role / Timing Role: Primary-side switch in quasi-resonant flyback converter, switching at 65–100 kHz. Use Value: 3.0 Ω RDS(on) and 0.49 µJ Eoss enable >88% efficiency at full load without active cooling. |
Use Scenario: Compact wall-mounted USB-C PD adapter delivering 5 V/3 A and 9 V/3 A outputs. IC Role / Device Role / Timing Role: Main power switch in primary-side controlled flyback with integrated controller. Use Value: 4.3 nC Qg allows direct drive from low-power PWM controller, reducing BOM count and layout complexity. |
| Smart Home Power Supply | Industrial Sensor Node PSU |
|
Use Scenario: Always-on 5 V/1 A auxiliary supply for Wi-Fi/BLE gateways in residential HVAC systems. IC Role / Device Role / Timing Role: High-side switch in offline buck-derived topology with valley-switching control. Use Value: 150°C Tj,max and 25.4 °C/W RthJS ensure reliability in sealed enclosures with no airflow. |
Use Scenario: Field-powered 3.3 V/200 mA supply for wireless vibration sensors mounted on motors. IC Role / Device Role / Timing Role: Primary switch in ultra-low standby flyback with burst-mode operation. Use Value: 10 µA IDSS at 500 V and 150°C enables <30 mW no-load consumption meeting Energy Star Tier 2. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP5NK50ZFP | 500 V, 4.4 Ω RDS(on), 12 nC Qg, TO-220FP package | Higher conduction loss and larger footprint; requires heatsink above 2 W | Select when legacy TO-220 layout reuse is required and efficiency >85% suffices |
| FDPF5N50NZ | 500 V, 3.6 Ω RDS(on), 7.2 nC Qg, TO-220F package | Higher Qg increases gate drive loss; lacks specified dI/dt rating | Prefer only if existing TO-220F thermal design exists and cost is primary constraint |
Compared with STP5NK50ZFP and FDPF5N50NZ, IPN50R3K0CEATMA1 offers superior RDS(on) × Qg FOM, SOT223 thermal integration, and verified 500 A/µs diode commutation-making it optimal for space-constrained, high-efficiency adapter and lighting designs where gate drive simplicity and thermal headroom are critical.
Availability
IPN50R3K0CEATMA1 is available at Aetrix Electronics and suitable for LED drivers, USB-C adapters, smart home power supplies, and industrial sensor node PSUs requiring stable component supply across multi-year production cycles.
Supply support for IPN50R3K0CEATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.
This part belongs to the CoolMOS™ CE family-designed specifically for cost-sensitive, high-efficiency offline SMPS in consumer and lighting applications, balancing performance, ease of use, and manufacturability.
FAQ
Is IPN50R3K0CEATMA1 suitable for paralleling in higher-power designs?
Yes, but with strict layout controls: gate resistors must be individually placed close to each MOSFET gate, and ferrite beads are recommended on each gate line to suppress oscillation. The datasheet explicitly advises this for paralleling due to inherent parameter spread and gate loop inductance sensitivity.
What is the maximum recommended gate resistor value for stable switching?
The datasheet specifies RG = 5.3 Ω for dynamic characterization. For stable EMI-controlled operation, 10–22 Ω is typical; values above 47 Ω may cause excessive switching time and increased conduction loss. Thermal testing at full load is required if using >33 Ω.
Does this MOSFET require a negative gate turn-off voltage?
No. The device has a gate threshold voltage of 2.5–3.5 V and is fully compatible with 0 V to 12 V gate drive. Negative turn-off is unnecessary and not supported by the absolute maximum rating (VGS = ±30 V), which permits only static or AC-coupled negative bias under specific transient conditions.
Can IPN50R3K0CEATMA1 replace older CoolMOS™ C3 or C6 parts in existing designs?
Direct replacement is not guaranteed: CE series features lower Qg and different gate charge distribution than C3/C6, potentially altering switching timing and EMI behavior. Layout review and re-validation of gate drive strength, snubber values, and thermal margin are required before substitution.
IPN50R3K0CEATMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- CoolMOS™ CE
- Package/Case:
- TO-261-4, TO-261AA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 500 V
- Current - Continuous Drain (Id) @ 25°C:
- 2.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 13V
- Rds On (Max) @ Id, Vgs:
- 3Ohm @ 400mA, 13V
- Vgs(th) (Max) @ Id:
- 3.5V @ 30µA
- Gate Charge (Qg) (Max) @ Vgs:
- 4.3 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 84 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 5W (Tc)
- Operating Temperature:
- -40°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-SOT223-3
IPN50R3K0CEATMA1 FAQ
1.How can I place an order for IPN50R3K0CEATMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IPN50R3K0CEATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IPN50R3K0CEATMA1 reliable?
The price and inventory of IPN50R3K0CEATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPN50R3K0CEATMA1 is usually 5 days.
3.What payment methods are accepted for IPN50R3K0CEATMA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPN50R3K0CEATMA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IPN50R3K0CEATMA1?
IPN50R3K0CEATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IPN50R3K0CEATMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IPN50R3K0CEATMA1?
For technical support, including IPN50R3K0CEATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPN50R3K0CEATMA1 requirements.
6.How does Aetrix verify that IPN50R3K0CEATMA1 is sourced from the original manufacturer or authorized distributors?
All IPN50R3K0CEATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPN50R3K0CEATMA1 meets industry standards.
7.What is the process for return or replacement of IPN50R3K0CEATMA1?
All IPN50R3K0CEATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPN50R3K0CEATMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IPN50R3K0CEATMA1 part is unused and in its original packaging.
Return procedure for IPN50R3K0CEATMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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