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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPN50R650CEATMA1

Name: IPN50R650CEATMA1
Brand: Infineon Technologies
SKU: IPN50R650CEATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPN50R650CEATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-261-4, TO-261AA

Datasheet:: IPN50R650CEATMA1.pdf

Description:: MOSFET N-CH 500V 9A SOT223

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPN50R650CEATMA1 from Infineon Technologies is a 500 V, 0.65 Ω R_DS(on) CoolMOS™ CE superjunction N-channel power MOSFET in PG-SOT223 package, rated for 9 A continuous drain current at T_C = 25°C and optimized for high-efficiency, cost-sensitive offline SMPS in adapters and LED lighting. It delivers 15 nC total gate charge, 1.69 µJ output energy at 400 V, and supports fast switching with 6 ns turn-on delay and 13 ns fall time.

For engineers reviewing the IPN50R650CEATMA1 datasheet, IPN50R650CEATMA1 pinout, IPN50R650CEATMA1 application, or IPN50R650CEATMA1 equivalent, key selection criteria include its 500 V V_(BR)DSS, low R_DS(on) × Q_g figure-of-merit, high commutation ruggedness (500 A/µs di/dt), and SOT223 thermal performance (R_thJS = 22.5 °C/W).

Technical Context

This CoolMOS™ CE device implements a superjunction structure enabling high-voltage blocking (500 V) with significantly reduced conduction and switching losses versus planar MOSFETs. Its gate threshold voltage (2.5–3.5 V) and plateau voltage (5.3 V) support standard 12 V gate drive, while the low C_iss (342 pF) and C_oss (26 pF) minimize drive power and improve EMI behavior in hard-switched flyback and buck converters.

The integrated body diode exhibits 0.84 V forward voltage at 2.3 A and 162 ns reverse recovery time, enabling reliable operation in discontinuous conduction mode (DCM) topologies without external snubbers. Its 102 mJ single-pulse avalanche energy rating ensures robustness against transient overvoltage events in unregulated input stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_(BR)DSS	500 V - Withstands full rectified mains voltage (e.g., 375 V DC link) with margin for surge and ringing.
R_DS(on),max	0.65 Ω @ T_j = 150°C - Enables <1.5 W conduction loss at 9 A, suitable for thermally constrained SOT223 layouts.
Q_g,typ	15 nC - Low gate drive requirement allows use of small gate drivers or integrated controller outputs without buffering.
E_oss @ 400 V	1.69 µJ - Reduces turn-off loss in high-frequency flyback designs operating above 65 kHz.
I_D,pulse	19 A - Supports peak current handling during startup or overload in adapter primary-side switching.
dV/dt ruggedness	50 V/ns - Ensures immunity to false triggering during high-slew-rate switching transients in compact PCB layouts.
R_thJS	22.5 °C/W - Defines junction-to-solder-point thermal path; enables accurate thermal design when mounted on copper pour.

Pinout & Package

Package: PG-SOT223 (TO-261AA), surface-mount, single-drain-tab configuration with exposed drain pad for thermal conduction.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Receives gate drive signal; low input capacitance (342 pF C_iss) reduces driver loading.
Pin 2 (Drain)	High-voltage power terminal	Connected to primary-side high-voltage rail; tab is electrically tied to drain for thermal and electrical integration.
Pin 3 (Source)	Reference and return path	Serves as local ground reference for gate drive and current sensing; connects to source of control IC or shunt resistor.

Key Features

Feature	Design Value
Extremely low FOM (R_DS(on) × Q_g)	0.65 Ω × 15 nC = 9.75 Ω·nC - Delivers best-in-class efficiency trade-off for sub-20 W offline converters.
High commutation ruggedness	500 A/µs di/dt rating - Supports reliable operation in DCM flyback without external diode snubbing or gate damping.
Easy gate drive compatibility	V_GS(th) = 2.5–3.5 V and V_plateau = 5.3 V - Works directly with standard PWM controllers (e.g., ICE2QS03, LNK306) without level-shifting.
Pb-free and halogen-free construction	RoHS-compliant plating and mold compound - Meets IEC 61249-2-21 and JEDEC J-STD-020 reflow requirements for industrial and consumer production.

Applications

LED Driver Power Stage

USB-C Adapter Primary Switch

Use Scenario: Constant-current LED driver operating from universal AC input (85–265 V_AC) in quasi-resonant flyback topology.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch controlling energy transfer to secondary; operates at 65–130 kHz with zero-voltage switching assist.

Use Value: Low E_oss (1.69 µJ) and fast turn-off (13 ns) reduce switching loss by ~18% vs. legacy 650 V MOSFETs, enabling >90% efficiency at 15 W output.

Use Scenario: Compact 30 W USB-C PD adapter using integrated QR flyback controller with primary-side regulation.

IC Role / Device Role / Timing Role: Main power switch in primary-side high-voltage leg; synchronized with controller's valley detection for ZVS operation.

Use Value: 0.65 Ω R_DS(on) limits conduction loss to <0.5 W at full load, allowing full-power operation within SOT223 thermal limits without heatsink.

Smart Home Lighting Ballast

Industrial AC-DC Auxiliary Supply

Use Scenario: Dimmable smart bulb with TRIAC-dimmable front-end and isolated flyback for MCU + LED string supply.

IC Role / Device Role / Timing Role: High-side switch in primary-side circuit; handles phase-cut waveform transients and maintains regulation across dimming range.

Use Value: 50 V/ns dV/dt ruggedness prevents spurious turn-on during leading-edge dimmer transitions, eliminating flicker under 10% dimming.

Use Scenario: 5 V/1 A auxiliary supply for PLC I/O modules powered from 24–48 V DC bus with wide input tolerance.

IC Role / Device Role / Timing Role: Primary switch in buck-derived isolated converter; operates in CCM with fixed 100 kHz frequency.

Use Value: 102 mJ single-pulse avalanche rating absorbs inductive kickback from relay coils or solenoid loads without clamping diodes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP5NK50ZFP	500 V, 1.5 Ω R_DS(on), 25 nC Q_g, TO-220FP package	Higher conduction loss, larger footprint, lower switching speed (C_iss = 520 pF)	Preferred where thermal mass outweighs size constraints and cost sensitivity is lower than efficiency targets.
IPP60R099C6	600 V, 0.099 Ω R_DS(on), 47 nC Q_g, TO-220 package	Lower R_DS(on) but higher Q_g and larger die; requires gate driver buffering	Selected only for >30 W designs needing ultra-low conduction loss and accepting higher drive complexity.

Compared with STP5NK50ZFP and IPP60R099C6, IPN50R650CEATMA1 offers the optimal balance of low R_DS(on) × Q_g, SOT223 form factor, and cost for sub-25 W consumer-grade offline converters-without requiring gate driver augmentation or sacrificing board space.

Availability

IPN50R650CEATMA1 is available at Aetrix Electronics and suitable for USB-C adapters, LED lighting ballasts, and smart home power supplies requiring stable component supply, RoHS compliance, and long-term manufacturability in high-volume consumer electronics.

Supply support for IPN50R650CEATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and ISO 14001.

This part belongs to the CoolMOS™ CE family-a cost-optimized superjunction MOSFET platform targeting high-efficiency, high-density offline SMPS in consumer and lighting applications where price-performance ratio is critical.

FAQ

Is IPN50R650CEATMA1 suitable for paralleling in high-current designs?

Yes, but with specific layout precautions: gate resistors must be placed close to each device, and ferrite beads on individual gate lines are recommended to suppress oscillation. The datasheet specifies that paralleling requires matched gate drive paths and thermal coupling to ensure current sharing-uneven temperature rise causes imbalance due to negative R_DS(on) temperature coefficient.

What is the maximum safe operating frequency for IPN50R650CEATMA1 in a flyback converter?

Based on measured dynamic parameters (15 nC Q_g, 1.69 µJ E_oss, 13 ns t_f), the device supports stable operation up to 130 kHz in quasi-resonant flyback designs with proper gate drive strength (≥1 A peak) and PCB layout minimizing loop inductance. Above this, switching losses increase nonlinearly, requiring derating of I_D or active cooling.

Does IPN50R650CEATMA1 require a gate resistor, and what value is recommended?

Yes-a gate resistor is mandatory to damp ringing and limit peak gate current. For standard 12 V gate drive, a 5.3 Ω resistor is used in the datasheet test conditions and provides optimal trade-off between switching speed (t_d(off) = 27 ns) and EMI suppression. Values below 3.3 Ω risk overshoot; above 10 Ω increases switching loss disproportionately.

How does the body diode performance impact design in DCM flyback topologies?

The body diode has 0.84 V V_SD at 2.3 A and 162 ns t_rr, enabling clean commutation without external snubbers in DCM. However, its Q_rr of 1 µC contributes to turn-on loss during ZVS transitions-designers should verify that controller dead-time accommodates t_rr to avoid shoot-through, especially below 20% load.

IPN50R650CEATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ CE

Package/Case:: TO-261-4, TO-261AA

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 9A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 13V

Rds On (Max) @ Id, Vgs:: 650mOhm @ 1.8A, 13V

Vgs(th) (Max) @ Id:: 3.5V @ 150µA

Gate Charge (Qg) (Max) @ Vgs:: 15 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 342 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 5W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-SOT223-3

IPN50R650CEATMA1 FAQ

1.How can I place an order for IPN50R650CEATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPN50R650CEATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPN50R650CEATMA1 reliable?

The price and inventory of IPN50R650CEATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPN50R650CEATMA1 is usually 5 days.

3.What payment methods are accepted for IPN50R650CEATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPN50R650CEATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPN50R650CEATMA1?

IPN50R650CEATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPN50R650CEATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPN50R650CEATMA1?

For technical support, including IPN50R650CEATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPN50R650CEATMA1 requirements.

6.How does Aetrix verify that IPN50R650CEATMA1 is sourced from the original manufacturer or authorized distributors?

All IPN50R650CEATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPN50R650CEATMA1 meets industry standards.

7.What is the process for return or replacement of IPN50R650CEATMA1?

All IPN50R650CEATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPN50R650CEATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPN50R650CEATMA1 part is unused and in its original packaging.

Return procedure for IPN50R650CEATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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