Infineon Technologies IPN50R950CEATMA1

Overview

IPN50R950CEATMA1 from Infineon Technologies is a 500 V, 0.95 Ω R_DS(on) CoolMOS™ CE superjunction N-channel power MOSFET in PG-SOT223 package, rated for 6.6 A continuous drain current at T_C = 25°C and optimized for high-efficiency, cost-sensitive offline SMPS in adapters and LED lighting. It delivers 10.5 nC total gate charge, 1.28 µJ output switching energy at 400 V, and supports fast commutation with 500 A/µs diode dI/dt capability.

For engineers reviewing the IPN50R950CEATMA1 datasheet, IPN50R950CEATMA1 pinout, IPN50R950CEATMA1 application, or IPN50R950CEATMA1 equivalent, key selection criteria include its low FOM (R_DS(on) × Q_g), high dv/dt ruggedness (50 V/ns), and thermal resistance of 23.7 °C/W (junction-to-solder point), critical for compact, thermally constrained flyback and buck-boost converters.

Technical Context

This CoolMOS™ CE device implements a superjunction structure enabling significantly lower conduction and switching losses than planar MOSFETs at 500 V rating. Its gate threshold voltage (2.5–3.5 V) and plateau voltage (5.4 V) support robust drive with standard 12 V gate drivers while maintaining noise immunity.

The integrated body diode exhibits 0.83 V forward voltage at 1.6 A and 140 ns reverse recovery time under 100 A/µs di/dt - enabling reliable operation in discontinuous conduction mode (DCM) flybacks without external snubbers. Its 68 mJ single-pulse avalanche energy rating ensures robustness against transient overvoltage events.

Key Specifications

Pinout & Package

Package: PG-SOT223 (standard SOT-223 outline with exposed drain pad for thermal enhancement). Pin 1 = Gate, Pin 2 = Drain, Pin 3 = Source - confirmed per Infineon Rev. 2.1 datasheet, Figure 11 (Package Outlines) and Table 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Compared with STP5NK50ZFP and IPP60R099C6, IPN50R950CEATMA1 offers the optimal balance of low gate charge, moderate R_DS(on), and SOT-223 thermal performance - making it uniquely suited for space- and efficiency-constrained sub-30 W offline converters where board area and passive cooling are critical.

Availability

IPN50R950CEATMA1 is available at Aetrix Electronics and suitable for LED bulb drivers, USB-C adapter primary stages, and smart home auxiliary power supplies requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.

Supply support for IPN50R950CEATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

The CoolMOS™ CE product line targets cost-sensitive, high-efficiency offline power conversion in consumer and lighting applications - delivering superjunction performance in standard packages without premium pricing or complex drive requirements.

FAQ

Is IPN50R950CEATMA1 suitable for paralleling in high-current designs?

Yes, but with specific layout precautions: Infineon recommends using ferrite beads on individual gate lines or separate totem-pole drivers to ensure balanced dynamic current sharing. The device's matched threshold voltage (2.5–3.5 V) and low gate resistance (3 Ω) support stable parallel operation when gate loop inductances are minimized and source connections are symmetrical.

What is the maximum recommended gate resistor value for reliable switching?

For standard 12 V gate drivers, a 5.3 Ω gate resistor is used in Infineon's characterization (Rev. 2.1, Table 5), yielding 7 ns turn-on delay and 19.5 ns fall time at 400 V. Values up to 10 Ω maintain safe SOA margins but increase switching losses by ~18%; values below 3 Ω risk ringing and overshoot due to PCB trace inductance.

Does IPN50R950CEATMA1 require a negative gate turn-off voltage?

No. The device is fully compatible with 0 V to +12 V or +15 V gate drive. Its gate oxide is rated for ±30 V, and the specified V_GS range (−20 V to +20 V) accommodates minor undershoot without degradation. Negative turn-off is unnecessary and adds complexity without benefit in this CE-series implementation.

How does the body diode performance compare to standard silicon MOSFETs?

Its body diode achieves 0.83 V V_SD at 1.6 A and 140 ns t_rr - significantly faster and lower forward drop than planar MOSFETs of similar voltage class. This reduces diode conduction loss and eliminates need for external Schottky catch diodes in DCM flyback, directly improving light-load efficiency and reducing bill-of-materials cost.