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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPN65R1K5CEATMA1

Name: IPN65R1K5CEATMA1
Brand: Infineon Technologies
SKU: IPN65R1K5CEATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPN65R1K5CEATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-261-4, TO-261AA

Datasheet:: IPN65R1K5CEATMA1.pdf

Description:: MOSFET N-CH 650V 5.2A SOT223

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Product details

Overview

IPN65R1K5CEATMA1 from Infineon Technologies is a 650 V, 1.5 Ω R_DS(on) CoolMOS™ CE superjunction power MOSFET in PG-SOT223 package, optimized for high-efficiency, cost-sensitive offline SMPS in adapters and LED lighting. It delivers 10.5 nC gate charge, 1.2 µJ output energy at 400 V, and supports 9.2 A pulsed drain current with 500 A/µs body diode commutation speed.

For engineers reviewing the IPN65R1K5CEATMA1 datasheet, IPN65R1K5CEATMA1 pinout, IPN65R1K5CEATMA1 application, or IPN65R1K5CEATMA1 equivalent, key selection criteria include its low FOM (R_DS(on) × Q_g), high dv/dt ruggedness (50 V/ns), and thermal resistance of 23.8 °C/W (junction-to-solder point), critical for compact, thermally constrained designs.

Technical Context

This CoolMOS™ CE device implements a superjunction structure enabling high-voltage blocking (650 V) with significantly reduced conduction and switching losses versus planar MOSFETs. Its 1.5 Ω max R_DS(on) at 10 V_GS and 150 °C, combined with 10.5 nC total gate charge, balances efficiency and drive simplicity in 65–100 kHz flyback and resonant converters.

The integrated fast-recovery body diode exhibits 200 ns reverse recovery time and 0.9 µC Q_rr at 400 V, supporting hard-switched and quasi-resonant topologies without external snubbing. Gate plateau voltage is fixed at 5.4 V, ensuring stable turn-on behavior under varying drive conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	650 V - Enables direct connection to 400 V DC bus in universal-input offline SMPS without derating.
R_DS(on) max	1.5 Ω @ 10 V_GS, 150 °C - Sets conduction loss floor in 5–7 W adapter designs with <1.5 A RMS drain current.
Q_g typ	10.5 nC - Allows use of low-power gate drivers (e.g., 100 mA peak) while maintaining <20 ns rise/fall times at 13 V drive.
E_oss @ 400 V	1.2 µJ - Reduces turn-off switching loss by ~35% vs. comparable 600 V planar MOSFETs in 65 kHz flyback.
Body diode dI/dt	500 A/µs - Supports ZVS/ZCS operation in LLC resonant converters without diode-induced shoot-through risk.
T_j max	150 °C - Permits operation in sealed LED driver enclosures with ambient up to 85 °C and minimal heatsinking.

Pinout & Package

Package: PG-SOT223 (standard SOT-223 outline with exposed drain pad for thermal enhancement). Pin 1 = Gate, Pin 2 = Drain, Pin 3 = Source - verified per Infineon Rev. 2.0 datasheet Figure 11 (Package Outlines).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control input terminal	Receives 10 V logic-level drive; 6.5 Ω internal gate resistance limits ringing and simplifies layout.
Pin 2 (Drain)	High-voltage power output	Connected to primary winding and bulk capacitor; exposed pad provides low-thermal-path junction-to-board interface.
Pin 3 (Source)	Reference node for gate drive and current sensing	Serves as return path for gate loop and enables low-side current monitoring via sense resistor.

Key Features

Feature	Design Value
Ultra-low figure-of-merit (R_DS(on) × Q_g)	15.75 Ω·nC - Enables >90% efficiency in 5 W USB-C adapters at full load without active cooling.
High commutation ruggedness	50 V/ns dv/dt rating - Eliminates need for external RC snubbers in high-noise industrial lighting ballasts.
Pb-free plating & halogen-free mold compound	Meets RoHS 2011/65/EU and JEDEC J-STD-020 MSL3 - Supports lead-free reflow assembly and environmental compliance.
Optimized for cost-sensitive applications	Targeted at consumer adapters and LED drivers - achieves 650 V capability at price point previously limited to 500 V devices.

Applications

Adapter Power Supply

LED Lighting Driver

Use Scenario: Universal-input (90–264 V_AC) 5–12 W flyback converter for USB wall chargers.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch operating at 65 kHz with DCM control.

Use Value: 1.2 µJ E_oss reduces no-load consumption to <30 mW, meeting DOE Level VI and EU CoC Tier 2 requirements.

Use Scenario: Non-isolated buck-boost LED driver for commercial downlights (24–48 V_OUT, 350–700 mA).

IC Role / Device Role / Timing Role: High-side switch in constant-current regulator with 100 kHz PWM dimming.

Use Value: 500 A/µs body diode dI/dt ensures clean current reversal during dimming transitions, eliminating audible coil noise.

Industrial AC-DC Module

Smart Home Power Adapter

Use Scenario: 15 W open-frame AC-DC module for PLC I/O modules with wide ambient range (−40 to +85 °C).

IC Role / Device Role / Timing Role: Main switching transistor in quasi-resonant flyback with valley switching.

Use Value: 150 °C T_j max and 23.8 °C/W R_thJS allow full power operation without heatsink in confined 25 mm × 25 mm PCB area.

Use Scenario: Compact 10 W USB-PD adapter with dual-port output and adaptive voltage regulation.

IC Role / Device Role / Timing Role: Primary-side switch in active-clamp flyback topology operating up to 120 kHz.

Use Value: 10.5 nC Q_g enables efficient gate driving with integrated controller's 200 mA driver, reducing BOM count by one external transistor.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP6NK60ZFP	600 V, 1.2 Ω R_DS(on), 25 nC Q_g, TO-220FP package	Higher conduction loss at high T_j; requires larger heatsink in same footprint	Prefer where higher R_DS(on) tolerance exists and TO-220 mechanical mounting is required.
FDPF15N60NZ	600 V, 0.42 Ω R_DS(on), 42 nC Q_g, TO-220F package	Lower R_DS(on) but 4× higher Q_g increases drive loss and EMI filtering complexity	Select when continuous 15 A current handling is mandatory and board space allows larger gate driver.

Compared with STP6NK60ZFP and FDPF15N60NZ, IPN65R1K5CEATMA1 offers superior cost-per-watt in sub-12 W adapters due to its optimized R_DS(on)/Q_g trade-off and SOT-223 thermal performance-enabling smaller PCB area and lower system-level BOM cost.

Availability

IPN65R1K5CEATMA1 is available at Aetrix Electronics and suitable for adapter power supplies, LED lighting drivers, and industrial AC-DC modules requiring stable component supply and long-term production continuity.

Supply support for IPN65R1K5CEATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and ISO 14001.

This part belongs to the CoolMOS™ CE series-a cost-optimized superjunction MOSFET platform targeting high-efficiency, high-volume consumer and lighting applications where price sensitivity and thermal constraints coexist.

FAQ

What is the maximum continuous drain current for IPN65R1K5CEATMA1 at 100 °C case temperature?

The maximum continuous drain current is 3.3 A at T_C = 100 °C, as specified in Table 2 of the Infineon datasheet Rev. 2.0. This value accounts for thermal derating due to junction-to-case thermal resistance (23.8 °C/W) and maximum junction temperature (150 °C), making it suitable for thermally constrained SOT-223 layouts without forced airflow.

Can IPN65R1K5CEATMA1 be used in parallel configurations?

Yes, but Infineon recommends using ferrite beads on individual gate lines or separate totem-pole drivers to ensure balanced dynamic current sharing. The device's positive temperature coefficient for R_DS(on) (shown in Diagram 8) supports inherent static current sharing, yet mismatched gate delays can cause transient imbalance at turn-on/turn-off.

What is the typical reverse recovery charge (Q_rr) of the integrated body diode?

The typical reverse recovery charge is 0.9 µC at V_R = 400 V, I_F = 1.5 A, and di_F/dt = 100 A/µs, per Table 7. This low Q_rr minimizes switching loss and EMI in hard-switched topologies and enables reliable operation in quasi-resonant converters without external diode replacement.

Does IPN65R1K5CEATMA1 require a negative gate voltage for reliable turn-off?

No. The device has a gate threshold voltage (V_GS(th)) of 2.5–3.5 V and is fully enhanced at 10 V_GS. A gate drive range of 0 V to +10 V is sufficient for robust switching; negative bias is not required or recommended, as the absolute maximum V_GS is ±30 V and no benefit is observed in dv/dt immunity or switching speed.

IPN65R1K5CEATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ CE

Package/Case:: TO-261-4, TO-261AA

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 5.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.5Ohm @ 1A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 10.5 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 225 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 5W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-SOT223

IPN65R1K5CEATMA1 FAQ

1.How can I place an order for IPN65R1K5CEATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPN65R1K5CEATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPN65R1K5CEATMA1 reliable?

The price and inventory of IPN65R1K5CEATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPN65R1K5CEATMA1 is usually 5 days.

3.What payment methods are accepted for IPN65R1K5CEATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPN65R1K5CEATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPN65R1K5CEATMA1?

IPN65R1K5CEATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPN65R1K5CEATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPN65R1K5CEATMA1?

For technical support, including IPN65R1K5CEATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPN65R1K5CEATMA1 requirements.

6.How does Aetrix verify that IPN65R1K5CEATMA1 is sourced from the original manufacturer or authorized distributors?

All IPN65R1K5CEATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPN65R1K5CEATMA1 meets industry standards.

7.What is the process for return or replacement of IPN65R1K5CEATMA1?

All IPN65R1K5CEATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPN65R1K5CEATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPN65R1K5CEATMA1 part is unused and in its original packaging.

Return procedure for IPN65R1K5CEATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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