Infineon Technologies IPN70R1K0CEATMA1

Overview

IPN70R1K0CEATMA1 from Infineon Technologies is a 700 V, 1.0 Ω R_DS(on) CoolMOS™ CE superjunction N-channel power MOSFET in PG-SOT223 package, rated for 7.4 A continuous drain current at T_C = 25°C and optimized for high-efficiency, cost-sensitive offline SMPS in adapters and LED lighting. It delivers 15.2 nC typical gate charge, 1.5 µJ E_oss at 400 V, and 500 A/µs body diode di/dt capability.

For engineers reviewing the IPN70R1K0CEATMA1 datasheet, IPN70R1K0CEATMA1 pinout, IPN70R1K0CEATMA1 application, or IPN70R1K0CEATMA1 equivalent, key selection criteria include its 700 V V_(BR)DSS, low FOM (R_DS(on) × Q_g), high commutation ruggedness, and SOT223 thermal performance in compact AC/DC flyback and buck-derived topologies.

Technical Context

This CoolMOS™ CE device implements a superjunction structure enabling significantly lower conduction and switching losses than planar MOSFETs at 700 V. Its gate threshold voltage of 2.5–3.5 V ensures stable turn-on under wide supply conditions, while the 5.5 V gate plateau voltage supports robust drive margin in self-oscillating or fixed-frequency controllers.

The MOSFET exhibits 328 pF input capacitance and 24 pF output capacitance at 100 V, with energy-related C_oss,er of 14 pF-critical for ZVS design in resonant converters. Its 226 ns reverse recovery time and 1.3 µC Q_rr are specified under 400 V, 2.2 A, 100 A/µs di/dt conditions, confirming suitability for hard-switched PFC and flyback secondary-side synchronous rectification.

Key Specifications

Pinout & Package

IPN70R1K0CEATMA1 is housed in PG-SOT223 (TO-261AA), a surface-mount package with exposed drain pad for enhanced thermal conduction. The three terminals are arranged with Gate (Pin 1), Drain (Pin 2), and Source (Pin 3) as defined in Infineon's Rev. 2.0 datasheet.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Compared with STP7NK70ZFP and FDPF7N70NZ, IPN70R1K0CEATMA1 offers the best balance of low R_DS(on), moderate Q_g, and SOT223 footprint-making it optimal for space-constrained, cost-driven 5–15 W offline supplies where thermal management relies on PCB copper rather than discrete heatsinks.

Availability

IPN70R1K0CEATMA1 is available at Aetrix Electronics and suitable for USB-C adapters, LED drivers, and smart home power supplies requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for IPN70R1K0CEATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO 9001 and IATF 16949.

This part belongs to the CoolMOS™ CE family-a cost-optimized superjunction MOSFET platform targeting high-efficiency, low-BOM offline SMPS in consumer and lighting applications, emphasizing ease of use and production scalability.

FAQ

Is IPN70R1K0CEATMA1 suitable for paralleling in high-current designs?

Yes, but only with careful layout: gate resistors ≥10 Ω per device and individual ferrite beads on each gate line are mandatory to prevent oscillation and current imbalance. The datasheet explicitly recommends this approach for paralleling, citing its high dI/dt capability and matched threshold voltage distribution across wafers.

What is the maximum recommended gate resistor value for stable 100 kHz operation?

A 10.2 Ω gate resistor is validated in the datasheet for 400 V, 2.2 A switching tests at 100 kHz. Increasing beyond 15 Ω risks excessive turn-on delay and elevated switching loss; decreasing below 5 Ω may cause gate ringing due to PCB inductance interacting with the device's 5.5 Ω intrinsic R_G.

Does IPN70R1K0CEATMA1 require a negative gate turn-off voltage?

No. Its gate oxide is rated for ±30 V, but the datasheet specifies no requirement for negative turn-off. Stable operation is achieved with 0 V to +13 V gate drive, and the 2.5–3.5 V V_GS(th) ensures immunity to noise-induced turn-on without negative bias.

How does its thermal resistance compare to DPAK alternatives?

R_thJS is 23 °C/W (junction-to-solder point), matching typical DPAK devices. However, its SOT223 footprint achieves R_thJA = 75 °C/W on 6 cm² copper-comparable to DPAK on identical layout-enabling equivalent thermal performance in space-constrained designs without changing PCB area.