Infineon Technologies IPN70R1K2P7SATMA1

Overview

IPN70R1K2P7SATMA1 from Infineon Technologies is a 700 V, 1.2 Ω R_DS(on) max, superjunction N-channel MOSFET in PG-SOT223 package, optimized for flyback converters in cost-sensitive consumer power supplies. It delivers 4.8 nC typical gate charge, 0.7 µJ E_oss at 400 V, and supports high-frequency switching with low conduction and switching losses.

For engineers reviewing the IPN70R1K2P7SATMA1 datasheet, IPN70R1K2P7SATMA1 pinout, IPN70R1K2P7SATMA1 application, or IPN70R1K2P7SATMA1 equivalent, key selection criteria include its 700 V breakdown voltage, thermal resistance of 19.7 °C/W (junction-to-solder point), integrated ESD protection (HBM Class 1C), and suitability for slim-form-factor AC/DC adapters and LED drivers requiring high power density.

Technical Context

This CoolMOS™ P7 device employs superjunction architecture to achieve ultra-low figure-of-merit (R_DS(on) × Q_g = 5.76 Ω·nC typ, R_DS(on) × E_oss = 0.84 Ω·µJ typ) while maintaining robust dv/dt ruggedness (100 V/ns). Its gate threshold voltage (V_GS(th) = 3 V typ) enables reliable turn-on with standard 10 V gate drive.

The integrated body diode exhibits 0.9 V forward voltage at 1.1 A and 145 ns reverse recovery time under 50 A/µs di/dt, supporting quasi-resonant and discontinuous conduction mode (DCM) flyback operation without external snubbers in many designs.

Key Specifications

Pinout & Package

Package: PG-SOT223 (standard SOT-223 outline with exposed drain tab for thermal enhancement).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage MOSFET applications.

Compared with IPN70R1K2P7SATMA1, the IPN70R1K4P7S trades 0.2 Ω higher R_DS(on) for improved thermal stability and lower gate charge, while the STP7NK70ZFP requires significant board redesign and sacrifices >30% switching efficiency at 100 kHz due to higher Q_g and E_oss.

Availability

IPN70R1K2P7SATMA1 is available at Aetrix Electronics and suitable for USB-C chargers, smart LED drivers, TV standby power supplies, and compact AC/DC adapters requiring stable component supply and long-term industrial availability.

Supply support for IPN70R1K2P7SATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This device belongs to the CoolMOS™ P7 family, engineered specifically for cost-sensitive, high-efficiency flyback converters in consumer electronics where slim form factor, low no-load power, and high power density are mandatory design goals.

FAQ

What is the maximum continuous drain current for IPN70R1K2P7SATMA1 at 100°C case temperature?

The maximum continuous drain current is 3.0 A at T_C = 100°C, as specified in Table 2 of the datasheet. This rating accounts for thermal derating due to reduced heat dissipation at elevated case temperatures and assumes proper PCB copper area (6 cm²) for drain connection per the thermal test condition.

Does IPN70R1K2P7SATMA1 require an external gate resistor for stable operation in flyback converters?

Yes - a gate resistor (typically 8.2 Ω, as used in the datasheet's dynamic characterization) is required to dampen ringing, control switching speed, and prevent oscillation. The device's low gate resistance (1.6 Ω) and 174 pF input capacitance make external RG essential for EMI compliance and reliability in production designs.

Can IPN70R1K2P7SATMA1 be paralleled with another unit for higher current capability?

Parallel operation is possible but requires careful layout: individual ferrite beads on each gate line and separate gate drivers (totem-pole configuration) are recommended per Infineon's application note AN-1200. Mismatched R_DS(on) and thermal coupling can cause current imbalance, especially above 2 A total current.

Is the drain tab of IPN70R1K2P7SATMA1 electrically isolated from the PCB copper pour?

No - the exposed drain tab (Pin 2) is electrically connected to the drain terminal and must be soldered directly to a non-isolated copper pour. Electrical isolation requires a thermally conductive but electrically insulating pad (e.g., ceramic or polyimide film), which degrades thermal performance by ~30% and is not recommended unless safety standards mandate it.