Infineon Technologies IPN70R2K1CEATMA1

Overview

IPN70R2K1CEATMA1 from Infineon Technologies is a 700 V, 2.1 Ω R_DS(on) CoolMOS™ CE superjunction power MOSFET in PG-SOT223 package, optimized for high-efficiency, cost-sensitive offline SMPS in adapters and LED lighting. It delivers 7.8 nC gate charge, 0.9 µJ E_oss at 400 V, and supports 6.3 A pulsed drain current with 500 A/µs body diode commutation speed.

For engineers reviewing the IPN70R2K1CEATMA1 datasheet, IPN70R2K1CEATMA1 pinout, IPN70R2K1CEATMA1 application, or IPN70R2K1CEATMA1 equivalent, key selection criteria include its low FOM (R_DS(on) × Q_g), high dv/dt ruggedness (50 V/ns), and qualification for standard-grade consumer and lighting systems - all validated in the Rev. 2.0 Final Data Sheet.

Technical Context

This CoolMOS™ CE device implements a superjunction structure enabling high-voltage blocking (700 V V_(BR)DSS) with significantly reduced conduction and switching losses versus planar MOSFETs. Its 2.1 Ω max R_DS(on) at 150 °C and 7.8 nC total gate charge support efficient operation in discontinuous conduction mode (DCM) flyback converters up to 100 kHz.

The MOSFET features a robust body diode with 500 A/µs reverse recovery di/dt capability and 187 ns trr, enabling reliable hard-switched operation in low-side configurations. Gate plateau voltage of 5.4 V and 6.5 Ω intrinsic gate resistance simplify drive design without requiring complex gate damping networks.

Key Specifications

Pinout & Package

Package: PG-SOT223 (standard SOT-223 outline with exposed drain pad for thermal enhancement). Pin 1 = Gate, Pin 2 = Drain, Pin 3 = Source - confirmed per Infineon PG-SOT223 mechanical drawing and datasheet Figure 11.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Compared with STP7NK70ZFP and FDPF7N70T, IPN70R2K1CEATMA1 offers superior power density and gate drive simplicity in SOT223 form factor, making it optimal for space-constrained, cost-driven consumer power supplies where thermal management relies on PCB copper rather than discrete heatsinks.

Availability

IPN70R2K1CEATMA1 is available at Aetrix Electronics and suitable for USB wall adapters, LED drivers, smart home power supplies, and industrial sensor node PSUs requiring stable component supply across production ramps and long-life programs.

Supply support for IPN70R2K1CEATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO 9001 and IATF 16949.

This part belongs to the CoolMOS™ CE family - a cost-optimized superjunction MOSFET platform targeting high-efficiency, high-volume consumer and lighting power conversion applications with simplified thermal and drive design.

FAQ

Is IPN70R2K1CEATMA1 suitable for paralleling in higher-power designs?

Yes, but with strict layout controls: gate ferrite beads (100–220 Ω impedance at 100 MHz) are required on each gate trace, and individual gate resistors (≥10 Ω) must be placed adjacent to each MOSFET. The datasheet explicitly recommends this for paralleling due to inherent parameter spread in superjunction devices and risk of current imbalance during switching transitions.

What is the maximum recommended gate drive voltage for reliable operation?

The absolute maximum gate-source voltage is ±30 V, but the recommended operating range is 10–15 V. Driving above 15 V increases gate oxide stress without meaningful R_DS(on) improvement (only ~5% reduction from 10 V to 15 V), and risks accelerated wear-out under repeated hot-plug or surge conditions per Infineon reliability testing.

Does IPN70R2K1CEATMA1 have built-in ESD protection on the gate?

No. The device has no integrated gate protection diode or Zener clamp. External gate protection - such as a 12 V Zener between gate and source - is mandatory in production designs to prevent damage from handling or system-level ESD events exceeding ±2 kV HBM, as confirmed in Infineon's application note AN2015-04.

Can this MOSFET replace older CoolMOS™ C6 or C7 devices in existing designs?

Not directly. While voltage and current ratings overlap, IPN70R2K1CEATMA1 has higher Q_g (7.8 nC) than C6 equivalents (~5.5 nC) and different gate threshold (2.5–3.5 V vs. 3.0–4.0 V), requiring gate driver strength and dead-time recalibration. Layout changes may also be needed due to differences in C_iss/C_oss ratio affecting EMI behavior.