Infineon Technologies IPP015N04NF2SAKMA1

Overview

IPP015N04NF2SAKMA1 from Infineon is an N-channel enhancement-mode MOSFET in PG-TO220-3 package, rated for 40 V drain-source voltage, 1.5 mΩ typical R_DS(on) at V_GS = 10 V, 194 A continuous drain current, and 100% avalanche tested. It serves as a high-current synchronous rectifier or main switch in DC-DC converters, motor drives, and industrial power supplies.

For engineers reviewing the IPP015N04NF2SAKMA1 datasheet, IPP015N04NF2SAKMA1 pinout, IPP015N04NF2SAKMA1 application, or IPP015N04NF2SAKMA1 equivalent, key selection criteria include low conduction loss (R_DS(on) ≤ 1.5 mΩ), high pulsed current capability (776 A), gate charge profile (Q_g = 106 nC), thermal resistance (R_thJC = 0.65 °C/W), and RoHS/halogen-free compliance.

Technical Context

This StrongIRFET™2 device uses trench-based silicon technology optimized for low R_DS(on) × Q_g figure-of-merit in hard-switched and synchronous rectification topologies. Its gate threshold voltage (V_GS(th) = 2.1–3.4 V) ensures robust turn-on with standard 5 V or 10 V logic-level drivers.

Dynamic parameters-including 7500 pF input capacitance, 2760 pF output capacitance, and 42 ns rise time at 100 A-are characterized under standardized 20 V V_DD, 10 V V_GS, and 1.6 Ω gate resistance conditions, enabling accurate switching loss estimation in buck, half-bridge, and LLC resonant designs.

Key Specifications

Pinout & Package

Package: PG-TO220-3 (standard through-hole, isolated tab). Tab is electrically connected to Drain (Pin 2).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IPB015N04LGATMA1 and STL220N4F7AG, IPP015N04NF2SAKMA1 offers superior thermal performance in through-hole mounting, verified avalanche capability for unclamped inductive loads, and lower gate charge for faster switching with reduced driver stress.

Availability

IPP015N04NF2SAKMA1 is available at Aetrix Electronics and suitable for server VRMs, industrial motor drives, telecom PSUs, and EV onboard chargers requiring stable component supply, long-lifecycle support, and JEDEC-qualified ruggedness.

Supply support for IPP015N04NF2SAKMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

This part belongs to the StrongIRFET™2 family-designed specifically for high-current, high-efficiency power conversion in data center, industrial, and e-mobility applications where low R_DS(on) and avalanche ruggedness are mandatory.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The absolute maximum junction temperature is 175 °C per datasheet Table 2. For continuous operation, thermal design must ensure T_j stays below this limit using R_thJC = 0.65 °C/W and measured case temperature. Derating curves in Diagram 2 show I_D drops to 149 A at T_C = 100 °C, confirming safe operation up to 175 °C junction under proper heatsinking.

Is the drain tab electrically isolated from the package mount surface?

No-the drain (Pin 2) and metal tab are internally connected and electrically identical. The tab must be either insulated from the heatsink using a dielectric pad or used as the drain node itself. Direct mounting without isolation creates a short between drain and heatsink potential, which is unsafe in floating or high-side configurations.

Does this MOSFET require a negative gate voltage for reliable turn-off?

No. The device has a standard N-channel enhancement-mode structure with V_GS(th) of 2.1–3.4 V. Turn-off is fully achieved at V_GS = 0 V; applying negative gate voltage is unnecessary and not specified in the datasheet. However, a small negative bias (e.g., –2 V) may improve noise immunity in high-dV/dt environments.

Can IPP015N04NF2SAKMA1 replace IPP020N04NG in existing designs?

Yes-with verification. Both are 40 V StrongIRFET™2 devices in TO220-3, but IPP015N04NF2SAKMA1 has lower R_DS(on) (1.5 mΩ vs. 2.0 mΩ) and higher I_D (194 A vs. 170 A). Gate charge increases slightly (106 nC vs. 95 nC), so gate driver slew rate and peak current must be confirmed. Thermal and layout compatibility is maintained.