Infineon Technologies IPP018N10N5AKSA1

Overview

IPP018N10N5AKSA1 from Infineon Technologies is an N-channel, normal-level, 100 V OptiMOS™ 5 power MOSFET in TO-220-3 package with 1.83 mΩ max R_DS(on), 205 A continuous drain current, and 175 °C operating temperature-designed for high-frequency switching and synchronous rectification in DC-DC converters.

For engineers reviewing the IPP018N10N5AKSA1 datasheet, IPP018N10N5AKSA1 pinout, IPP018N10N5AKSA1 application, or IPP018N10N5AKSA1 equivalent, key selection criteria include low gate charge (Q_G = 168 nC), ultra-low output charge (Q_OSS = 213 nC), fast switching (t_d(off) = 77 ns), and thermal robustness for industrial power stages.

Technical Context

This MOSFET employs a trench-based silicon process optimized for figure-of-merit (FOM) in high-efficiency power conversion. Its gate threshold voltage (V_GS(th) = 2.2–3.8 V) enables direct drive from standard 5 V or 10 V controllers without level-shifting, while its low C_iss (12–16 nF) and C_rss (80–140 pF) support stable operation at >500 kHz switching frequencies.

The device integrates a robust body diode with Q_rr = 287–574 nC and t_rr = 99–198 ns, enabling reliable synchronous rectification in buck, LLC, and OR-ing applications. Thermal resistance R_thJC = 0.3–0.4 °C/W ensures efficient heat transfer to heatsinks in high-power density designs.

Key Specifications

Pinout & Package

Package: PG-TO220-3 (TO-220-3) with isolated tab connected to Drain. Standard through-hole mounting; tab serves as primary thermal and electrical path for Drain.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar power MOSFET applications.

Compared with STL220N10F7 and IXFH180N10P, IPP018N10N5AKSA1 delivers the lowest combined conduction–switching loss product in TO-220-3, making it optimal for space-constrained, high-efficiency 1–3 kW industrial and telecom power supplies.

Availability

IPP018N10N5AKSA1 is available at Aetrix Electronics and suitable for server VRMs, industrial DC-DC converters, and telecom rectifiers requiring stable component supply and long-term industrial lifecycle support.

Supply support for IPP018N10N5AKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to the OptiMOS™ 5 family-engineered specifically for high-frequency, high-efficiency power conversion in datacenter, industrial, and renewable energy systems where low R_DS(on) and minimized gate/drain charge are critical.

FAQ

What is the maximum allowable case temperature for continuous operation?

The device is rated for continuous operation up to 175 °C junction temperature. With R_thJC = 0.3–0.4 °C/W and typical heatsink interface resistance, sustained case temperatures up to 110–120 °C are achievable under 205 A load with adequate airflow and thermal interface material.

Does the body diode support synchronous rectification without external Schottky?

Yes-the integrated body diode has t_rr = 99–198 ns and Q_rr = 287–574 nC at 100 A, enabling reliable synchronous rectification in buck and LLC topologies when driven with precise gate timing and appropriate dead time.

Is the TO-220-3 tab electrically isolated from the leads?

No-the metal tab is internally connected to Pin 2 (Drain) and is not electrically isolated. It must be mounted to a heatsink using insulating hardware (e.g., mica washer + thermal paste) if the heatsink is grounded or at a different potential than the Drain node.

Can IPP018N10N5AKSA1 replace IPP020N10N5 in existing designs?

Yes-with minor validation: both share identical TO-220-3 package, pinout, and 100 V rating, but IPP018N10N5AKSA1 offers 10% lower R_DS(on) (1.83 vs. 2.05 mΩ) and 12% lower Q_G (168 vs. 190 nC), improving efficiency and easing gate drive requirements without layout changes.