Infineon Technologies IPP020N08N5XKSA1

Overview

IPP020N08N5XKSA1 from Infineon Technologies is an N-channel enhancement-mode MOSFET in TO-220-3 package, rated for 80 V V_DS, 2.0 mΩ R_DS(on) max at V_GS = 10 V, and 120 A continuous drain current at T_C = 25 °C. It features 178 nC total gate charge, 207 nC output charge, and is 100% avalanche tested for robustness in high-current switching applications such as DC-DC synchronous rectification in server power supplies.

For engineers reviewing the IPP020N08N5XKSA1 datasheet, IPP020N08N5XKSA1 pinout, IPP020N08N5XKSA1 application, or IPP020N08N5XKSA1 equivalent, key selection criteria include its low R_DS(on) × Q_G figure-of-merit (FOM), fast switching dynamics (t_d(off) = 102 ns), integrated body diode with 105 ns reverse recovery time, and JEDEC-qualified reliability for industrial power conversion designs.

Technical Context

This OptiMOS™ 5 device employs trench-gate superjunction technology to achieve ultra-low on-resistance while maintaining fast switching speed and low gate charge. Its 80 V breakdown voltage and 120 A rating support high-efficiency operation in 48 V input bus systems, including telecom rectifiers and POL converters.

The MOSFET integrates a co-packaged, optimized body diode with 0.92 V forward voltage at 100 A and 308 nC reverse recovery charge-enabling reliable synchronous rectification without external Schottky diodes. Thermal resistance R_thJC of 0.3 K/W ensures effective heat transfer to heatsinks in TO-220 mounting configurations.

Key Specifications

Pinout & Package

Package: PG-TO220-3 (TO-220-3) with isolated tab connected to Drain. Standard through-hole mounting with thermal interface to heatsink via metal tab.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, low-R_DS(on) MOSFET applications.

Compared with STL220N8F7AG and IXFH120N075T2, IPP020N08N5XKSA1 delivers optimal balance of low R_DS(on), moderate Q_G, and 80 V rating-making it ideal for 48 V industrial and telecom power stages where thermal management, efficiency, and reliability must coexist without package size penalty.

Availability

IPP020N08N5XKSA1 is available at Aetrix Electronics and suitable for server VRMs, telecom rectifiers, and industrial motor drives requiring stable component supply, long-lifecycle support, and consistent parametric performance across production batches.

Supply support for IPP020N08N5XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

This part belongs to the OptiMOS™ 5 family-designed specifically for high-efficiency, high-current DC-DC conversion in datacenter, telecom, and industrial power supplies where low R_DS(on), fast switching, and ruggedness are mandatory.

FAQ

Is IPP020N08N5XKSA1 suitable for synchronous rectification in LLC resonant converters?

Yes. With a 105 ns reverse recovery time, 308 nC Q_rr, and low 0.92 V body diode forward voltage at 100 A, this MOSFET supports zero-voltage switching (ZVS) in LLC secondaries. Its 2.0 mΩ R_DS(on) minimizes conduction loss during synchronous on-time, and the 178 nC Q_G allows clean turn-on with standard gate drivers like UCC27611.

What is the maximum allowable case temperature for continuous 120 A operation?

The datasheet specifies 120 A continuous drain current at T_C = 25 °C. At higher case temperatures, derating applies: ID drops to 80 A at T_C = 100 °C per Figure 2. For sustained 120 A operation, the heatsink must maintain T_C ≤ 25 °C-achievable with ≥6 cm² copper area and forced airflow or large aluminum heatsink per Figure 3's SOA curve.

Does IPP020N08N5XKSA1 require a negative gate voltage for safe turn-off?

No. The gate threshold voltage is 2.2–3.8 V, and the absolute maximum V_GS is ±20 V. A 0 V gate drive fully turns off the device. Negative gate bias is not required or recommended; standard 0 V/10 V or 0 V/12 V logic-level gate drive suffices for reliable operation in both hard-switched and resonant topologies.

Can IPP020N08N5XKSA1 replace IPP034N08N5 in an existing design?

Yes, with performance improvement. IPP020N08N5XKSA1 has 2.0 mΩ R_DS(on) vs. 3.4 mΩ for IPP034N08N5-a 41% reduction-yielding lower conduction loss. Gate charge is 178 nC vs. 145 nC, requiring minor gate driver review. Pinout and package are identical (TO-220-3), enabling drop-in replacement where thermal design accommodates slightly higher Q_G-related switching loss.