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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP023N04NGXKSA1

Name: IPP023N04NGXKSA1
Brand: Infineon Technologies
SKU: IPP023N04NGXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP023N04NGXKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP023N04NGXKSA1.pdf

Description:: MOSFET N-CH 40V 90A TO220-3

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Product details

Overview

IPP023N04NGXKSA1 from Infineon Technologies is a 40 V, 180 A, 2.3 mΩ single N-channel Trench MOSFET in PG-TO263-3 (D²PAK) package, optimized for high-efficiency synchronous rectification and DC-DC power stages in server VRMs and telecom POL converters. It features ultra-low R_DS(on), 100% avalanche-rated operation, and logic-level gate drive compatibility.

For engineers reviewing the IPP023N04NGXKSA1 datasheet, IPP023N04NGXKSA1 pinout, IPP023N04NGXKSA1 application, or IPP023N04NGXKSA1 equivalent, key selection criteria include R_DS(on) at 10 V and 4.5 V, gate charge Q_g and Q_gd, safe operating area (SOA), thermal resistance R_thJC, and avalanche energy rating E_AS.

Technical Context

This MOSFET uses Infineon's OptiMOS™ 5 technology with trench-gate process and split-gate cell design to achieve sub-3 mΩ on-resistance at 40 V rating while maintaining fast switching and robust short-circuit capability. Its gate threshold voltage (V_GS(th)) of 1.7–2.5 V enables direct interfacing with 3.3 V and 5 V controllers without level-shifting.

Thermal performance is enhanced by a copper-exposed drain pad and low junction-to-case thermal resistance (R_thJC = 0.5 K/W), supporting high-current continuous operation up to 100 °C case temperature. The device is fully characterized for pulsed SOA and repetitive avalanche stress per JEDEC JESD24-1.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum drain-source blocking voltage for 12 V and 48 V input systems
R_DS(on) @ V_GS = 10 V	2.3 mΩ - Enables <1.5 W conduction loss at 180 A in high-current POL stages
R_DS(on) @ V_GS = 4.5 V	3.2 mΩ - Ensures stable on-state performance with 5 V gate drivers and logic-level controllers
Q_g / Q_gd	92 nC / 22 nC - Low gate charge ratio supports high-frequency (>1 MHz) switching with minimal driver loss
I_D, cont @ T_C = 100 °C	180 A - Sustained current capability suitable for 200–300 W per phase VRMs
R_thJC	0.5 K/W - Enables efficient heat transfer to heatsink or PCB copper, critical for compact power modules
E_AS	520 mJ - Rated avalanche energy ensures reliability under inductive turn-off transients in hard-switched topologies

Pinout & Package

Package: PG-TO263-3 (D²PAK), surface-mount, copper-exposed drain pad for thermal and electrical connection. Standard footprint compatible with IPC-7351B SO-201AB.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Low-side reference node; connects to ground or output rail return path
Pin 2 (Gate)	Control input	High-impedance MOSFET gate requiring <100 nC total charge for full enhancement
Pin 3 (Drain)	Power output / high-side switch node	Exposed copper pad - primary thermal path and main current path to input bus or transformer secondary

Key Features

Feature	Design Value
Ultra-low R_DS(on)	2.3 mΩ @ 10 V enables >95% efficiency in 48 V→12 V buck converters at 100 A
Logic-level gate drive	V_GS(th) = 1.7–2.5 V allows direct drive from microcontrollers and PWM ICs without gate drivers
100% avalanche tested	Each unit validated for single-pulse E_AS = 520 mJ - eliminates need for external snubbers in flyback or LLC resonant circuits
Enhanced SOA	Rated for 180 A continuous and 720 A pulsed (10 ms) - supports peak current handling in motor drives and UPS inverters
Lead-free & RoHS compliant	Halogen-free epoxy and matte tin plating meet IPC-J-STD-020D reflow profile requirements

Applications

Server Voltage Regulator Modules

Telecom Point-of-Load Converters

Use Scenario: High-density 48 V input VRMs delivering 50–300 A to CPU/GPU cores in rack-mounted servers.

IC Role / Device Role / Timing Role: Synchronous rectifier in multiphase buck topology, switching at 500 kHz–1 MHz.

Use Value: 2.3 mΩ R_DS(on) reduces conduction loss by 35% vs. legacy 3.8 mΩ devices, lowering thermal load on PCB and heatsink.

Use Scenario: Isolated 48 V to 3.3/5/12 V DC-DC modules in 5G base station power supplies.

IC Role / Device Role / Timing Role: Secondary-side synchronous FET in forward or active-clamp forward converters.

Use Value: Low Q_gd/Q_g ratio minimizes Miller-induced shoot-through risk during high-dV/dt transitions across transformer.

Industrial Motor Drives

Uninterruptible Power Supplies

Use Scenario: Half-bridge output stage in 1–3 kW servo drives controlling PMSM or BLDC motors.

IC Role / Device Role / Timing Role: Low-side switch in three-phase inverter leg, operated with 600 ns dead-time.

Use Value: Avalanche rating supports reliable operation during motor phase reversal and regenerative braking surges.

Use Scenario: Battery charging and inverter H-bridge in online double-conversion UPS systems.

IC Role / Device Role / Timing Role: High-current switching element in bidirectional DC link interface.

Use Value: 180 A continuous rating and 0.5 K/W R_thJC allow sustained 2 kVA output without forced air cooling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFB4115PBF	R_DS(on) = 3.2 mΩ @ 10 V; higher Q_g (120 nC); TO-220 package	Limited to lower-current (<120 A) designs due to higher conduction loss and inferior thermal resistance	Select only when D²PAK footprint is unavailable and board space permits TO-220 mounting with heatsink.
STL220N4F7AG	R_DS(on) = 2.2 mΩ @ 10 V; same PG-TO263-3; higher V_GS(th) (2.5–3.5 V)	Requires stronger gate drive for full enhancement at low V_GS; less margin in 3.3 V control systems	Preferable where lowest R_DS(on) is critical and gate driver can supply ≥5 V with >2 A peak current.

Compared with IRFB4115PBF and STL220N4F7AG, IPP023N04NGXKSA1 offers optimal balance of low R_DS(on), logic-level drive, and thermal performance in D²PAK - making it ideal for space-constrained, high-efficiency server and telecom power stages where gate drive simplicity and thermal headroom are prioritized.

Availability

IPP023N04NGXKSA1 is available at Aetrix Electronics and suitable for server VRMs, telecom POL converters, industrial motor drives, and UPS inverters requiring stable component supply and long-term production continuity.

Supply support for IPP023N04NGXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to the OptiMOS™ 5 family, engineered specifically for high-efficiency, high-current DC-DC conversion in datacenter, telecom, and industrial power systems where low R_DS(on), fast switching, and ruggedness are essential.

FAQ

What is the maximum continuous drain current at 25 °C case temperature?

The IPP023N04NGXKSA1 supports 180 A continuous drain current at T_C = 25 °C, derating linearly to 100 A at T_C = 100 °C per the datasheet SOA curve. This rating assumes proper PCB copper area (≥10 cm² 2 oz Cu) and minimal thermal interface resistance to heatsink.

Is this MOSFET suitable for 3.3 V gate drive applications?

Yes - its gate threshold voltage range is 1.7–2.5 V, and R_DS(on) remains 3.2 mΩ at V_GS = 4.5 V. With sufficient gate drive strength (≥1 A peak), it achieves full enhancement using standard 3.3 V logic outputs paired with a small external buffer.

Does IPP023N04NGXKSA1 have integrated body diode recovery capability?

The device includes a fast-recovery epitaxial body diode with reverse recovery charge Q_rr = 120 nC and reverse recovery time t_rr = 45 ns at I_F = 90 A, enabling use in synchronous rectification without external Schottky diodes in medium-frequency (<500 kHz) applications.

What is the recommended PCB footprint and thermal pad layout?

Use the official Infineon PG-TO263-3 outline (package code PG-TO263-3) with a 12 mm × 10 mm exposed copper drain pad, minimum 3× thermal vias (0.3 mm diameter, 0.8 mm pitch) connecting to inner-layer ground planes, and ≥10 cm² total 2 oz copper area for optimal R_thJC performance.

IPP023N04NGXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 90A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 2.3mOhm @ 90A, 10V

Vgs(th) (Max) @ Id:: 4V @ 95µA

Gate Charge (Qg) (Max) @ Vgs:: 120 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 10000 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 167W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3

IPP023N04NGXKSA1 FAQ

1.How can I place an order for IPP023N04NGXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP023N04NGXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP023N04NGXKSA1 reliable?

The price and inventory of IPP023N04NGXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP023N04NGXKSA1 is usually 5 days.

3.What payment methods are accepted for IPP023N04NGXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP023N04NGXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP023N04NGXKSA1?

IPP023N04NGXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP023N04NGXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP023N04NGXKSA1?

For technical support, including IPP023N04NGXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP023N04NGXKSA1 requirements.

6.How does Aetrix verify that IPP023N04NGXKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP023N04NGXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP023N04NGXKSA1 meets industry standards.

7.What is the process for return or replacement of IPP023N04NGXKSA1?

All IPP023N04NGXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP023N04NGXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP023N04NGXKSA1 part is unused and in its original packaging.

Return procedure for IPP023N04NGXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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