Infineon Technologies IPP023N08N5XKSA1

Overview

IPP023N08N5XKSA1 from Infineon Technologies is an N-channel enhancement-mode power MOSFET in TO-220-3 package, rated for 80 V V_DS, 2.3 mΩ R_DS(on) at V_GS = 10 V, and 120 A continuous drain current at T_C = 25 °C. It features 133 nC total gate charge, 156 nC output charge, and is 100% avalanche tested for robustness in high-current switching applications such as DC-DC synchronous rectification and motor control.

For engineers reviewing the IPP023N08N5XKSA1 datasheet, IPP023N08N5XKSA1 pinout, IPP023N08N5XKSA1 application, or IPP023N08N5XKSA1 equivalent, key selection criteria include its low R_DS(on) × Q_G figure-of-merit (FOM), fast switching performance (t_d(off) = 62 ns), and thermal resistance of 0.4 K/W (junction-to-case), critical for high-efficiency power stage design.

Technical Context

This device implements a trench-based silicon MOSFET architecture optimized for high-frequency DC-DC converters and synchronous buck stages. Its gate threshold voltage (2.2–3.8 V) enables direct drive from standard 5 V or 3.3 V controllers, while its low reverse recovery charge (Q_rr = 202–404 nC) and fast trr (85–170 ns) minimize body diode conduction losses during hard-switching transitions.

The device supports unclamped inductive switching with E_AS = 674 mJ at I_D = 100 A, and operates across –55 °C to +175 °C junction temperature range. Its 100% avalanche-tested qualification ensures reliability under transient overvoltage conditions common in automotive and industrial motor drives.

Key Specifications

Pinout & Package

Package: PG-TO220-3 (TO-220-3) with isolated tab connected to Drain. Standard through-hole mounting with vertical PCB orientation and 6 cm² copper pour recommended for thermal performance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 80 V power MOSFET applications.

Compared with STL220N8F7 and IXFH80N10P, IPP023N08N5XKSA1 delivers the lowest R_DS(on) × Q_G FOM in TO-220-3, making it optimal for thermally constrained, high-frequency 80 V applications where both conduction and switching losses must be minimized simultaneously.

Availability

IPP023N08N5XKSA1 is available at Aetrix Electronics and suitable for server VRM power stages, automotive DC-DC converters, and industrial motor drive inverters requiring stable component supply and long-term production continuity.

Supply support for IPP023N08N5XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949 standards.

This part belongs to the OptiMOS™ 5 family-designed specifically for high-efficiency, high-frequency power conversion in server, automotive, and industrial applications where low R_DS(on), low gate charge, and avalanche ruggedness are mandatory.

FAQ

What is the maximum safe operating temperature for IPP023N08N5XKSA1?

The junction temperature must not exceed +175 °C under any operating condition. At T_C = 100 °C, the continuous drain current derates to 120 A. Thermal design must ensure R_thJC ≤ 0.4 K/W and maintain case temperature below 125 °C for reliable 10-year operation in industrial environments.

Is IPP023N08N5XKSA1 suitable for synchronous rectification in a 600 kHz buck converter?

Yes-its 133 nC Q_G, 156 nC Q_oss, and 2.3 mΩ R_DS(on) enable efficient synchronous rectification at 600 kHz. Measured t_d(off) = 62 ns and t_f = 20 ns support tight dead-time control, minimizing shoot-through risk while maintaining >94% efficiency at 100 A output.

Does IPP023N08N5XKSA1 have integrated ESD protection?

No-this MOSFET lacks on-die ESD protection circuitry. Gate-source voltage must be limited to ±20 V, and handling requires Class 1B ESD controls (HBM < 2 kV). External 10 Ω gate resistor and 12 V Zener clamp between gate and source are recommended in production layouts.

Can IPP023N08N5XKSA1 replace IPP036N08N5 in an existing design?

Yes-with caution: both share TO-220-3 package and 80 V rating, but IPP023N08N5XKSA1 has 35% lower R_DS(on) (2.3 vs. 3.6 mΩ) and 15% lower Q_G (133 vs. 157 nC). Layout thermal relief and gate drive strength must be verified; no changes to pinout or biasing are required.