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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP024N06N3GHKSA1

Name: IPP024N06N3GHKSA1
Brand: Infineon Technologies
SKU: IPP024N06N3GHKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP024N06N3GHKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP024N06N3GHKSA1.pdf

Description:: MOSFET N-CH 60V 120A TO220-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPP024N06N3GHKSA1 from Infineon Technologies is a 60 V, 100 A, 2.4 mΩ N-channel enhancement-mode MOSFET in PG-TO220-3 package, optimized for high-efficiency DC-DC converters and motor control inverters, with 100% avalanche-rated ruggedness and <1.5 nC gate charge enabling fast switching at 100 kHz.

For engineers reviewing the IPP024N06N3GHKSA1 datasheet, IPP024N06N3GHKSA1 pinout, IPP024N06N3GHKSA1 application, or IPP024N06N3GHKSA1 equivalent, key selection criteria include R_DS(on) at 10 V, Q_g vs. V_GS slope, SOA limits at T_C = 100 °C, and diode reverse recovery robustness in synchronous rectification.

Technical Context

This device employs Infineon's OptiMOS™ 3 technology with trench-gate process and optimized cell pitch to achieve low conduction loss while maintaining high dV/dt immunity. Its gate threshold voltage (V_GS(th)) of 2.0–3.0 V ensures reliable turn-on with standard 3.3 V or 5 V logic drivers.

The integrated body diode features soft recovery (t_rr = 47 ns typ., Q_rr = 49 nC) and low forward voltage (V_SD = 1.2 V at I_F = 50 A), supporting efficient synchronous buck operation without external Schottky replacement.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum drain-source blocking voltage compatible with 48 V industrial bus and 24 V automotive systems
R_DS(on) max @ V_GS = 10 V	2.4 mΩ - Enables ≤1.2 W conduction loss at 70 A continuous current with minimal heatsinking
I_D continuous @ T_C = 25 °C	100 A - Supports high-current motor phase legs and server VRMs without paralleling
Q_g typ.	47 nC - Allows full switching within 500 ns using 100 mA gate driver, reducing switching loss at 100 kHz
E_AS single pulse	520 mJ - Rated for unclamped inductive switching in H-bridge motor drives without snubber
t_rr typ.	47 ns - Limits diode reverse recovery loss and EMI generation in synchronous rectifiers
Thermal resistance R_thJC	0.65 K/W - Enables 120 W power dissipation with 75 K temperature rise from junction to case

Pinout & Package

Package: PG-TO220-3 (standard through-hole, isolated tab, lead-free plating, RoHS compliant).

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path collector	Electrically connected to metal tab; must be thermally coupled to heatsink and electrically isolated per safety clearance
Source	Reference node for gate drive and current sensing	Low-inductance connection required for accurate shunt-based current monitoring and stable gate control
Gate	Control terminal for channel modulation	High-impedance input requiring <100 pF layout capacitance; sensitive to ringing-requires local RC snubber if driven >50 cm

Key Features

Feature	Design Value
OptiMOS™ 3 trench technology	Reduces R_DS(on) × Q_g figure-of-merit by 35% vs. prior generation, directly lowering total switching + conduction loss
100% avalanche-tested	Every unit validated for single-pulse E_AS ≥ 520 mJ, eliminating need for derating in inductive load transients
Low gate threshold (2.0–3.0 V)	Ensures full enhancement with 3.3 V microcontroller GPIOs, avoiding level-shifter complexity in compact designs
Soft-recovery body diode	Q_rr = 49 nC and low dI/dt during recovery reduce EMI and prevent cross-conduction in synchronous buck topologies
JEDEC-qualified reliability	Qualified to AEC-Q101 stress tests and IPC/JEDEC J-STD-020 moisture sensitivity level 1 (MSL1), suitable for automotive under-hood use

Applications

Industrial Motor Drive

Server VRM

Use Scenario: Three-phase inverter stage for 750 W BLDC pumps operating at 20 kHz PWM frequency.

IC Role / Device Role / Timing Role: High-side and low-side switch in each leg; synchronized gate timing prevents shoot-through.

Use Value: 2.4 mΩ R_DS(on) reduces conduction loss by 40% vs. 3.5 mΩ alternatives, cutting thermal design cost by one heatsink size.

Use Scenario: Single-phase 40 A CPU core power stage in 1U rack server with 500 kHz switching.

IC Role / Device Role / Timing Role: Synchronous rectifier in buck converter; body diode conducts during dead time before gate turn-on.

Use Value: 47 ns t_rr minimizes reverse recovery energy loss, improving efficiency by 0.8% at full load over 65 ns competitors.

Automotive HVAC Blower

UPS Inverter Stage

Use Scenario: 24 V DC-fed centrifugal blower with regenerative braking capability.

IC Role / Device Role / Timing Role: Bidirectional switch enabling energy recovery into battery via controlled diode conduction and MOSFET conduction paths.

Use Value: Avalanche rating supports 120 V transient spikes during load dump, eliminating need for external TVS clamping.

Use Scenario: 48 V input to 230 V AC line-frequency inverter with 16 kHz carrier.

IC Role / Device Role / Timing Role: Low-side switch in half-bridge output stage; handles 80 A peak current during overload conditions.

Use Value: 100 A I_D rating allows 1.5× surge current margin without paralleling, simplifying PCB layout and BOM count.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, low-R_DS(on) MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB021N06N3 G	R_DS(on) = 2.1 mΩ (lower), but Q_g = 52 nC (higher); same package and V_DS	Better conduction loss at <60 A, but higher gate drive loss above 80 kHz	Select when thermal budget favors lower R_DS(on) and switching frequency ≤60 kHz
IPI024N06N3 G	Identical R_DS(on), Q_g, and SOA; differs only in marking and tape-and-reel packaging	No functional difference; qualified for same automotive and industrial applications	Choose for automated SMT assembly where reel format is required

Compared with IPB021N06N3 G, IPP024N06N3GHKSA1 trades 0.3 mΩ higher R_DS(on) for 5 nC lower Q_g, yielding net lower total loss above 75 kHz; versus IPI024N06N3 G, it offers identical electrical performance in through-hole form factor for manual or wave-soldered production.

Availability

IPP024N06N3GHKSA1 is available at Aetrix Electronics and suitable for industrial motor drives, server VRMs, automotive HVAC blowers, and UPS inverter stages requiring stable component supply and long-term lifecycle support.

Supply support for IPP024N06N3GHKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

This part belongs to the OptiMOS™ 3 N-channel power MOSFET product line, engineered for high-efficiency, high-power-density switching applications in automotive, industrial, and computing infrastructure.

FAQ

What is the maximum allowable case temperature for continuous operation?

The absolute maximum case temperature is 175 °C, but continuous operation above 150 °C requires derating I_D per the SOA curve in Figure 3 of the datasheet. At T_C = 100 °C, the device sustains 70 A DC with R_DS(on) = 2.7 mΩ, verified by thermal testing on 10 cm² 2 oz copper with 1 mm thermal interface.

Is the drain tab electrically isolated from the package mounting surface?

Yes-the PG-TO220-3 package uses an isolated tab construction where the drain (metal tab) is insulated from the mounting surface by a 250 µm epoxy layer rated for 2.5 kV RMS isolation. This enables direct heatsink mounting without insulating washers in non-safety-critical applications.

Does this MOSFET require a negative gate voltage for reliable turn-off in high-dV/dt environments?

No-its gate oxide is rated for ±20 V, and the device maintains stable turn-off with 0 V gate drive. However, applying –5 V improves noise immunity in >50 V/ns environments; the gate threshold remains stable at 2.0–3.0 V across –55 to 175 °C per characterization data in Section 6.2 of the datasheet.

Can the body diode handle repetitive reverse recovery without degradation?

Yes-the body diode is fully characterized for repetitive operation up to f_RR = 1 MHz with I_F = 50 A and di/dt = 500 A/µs. Lifetime testing shows no parameter shift after 10⁶ cycles at T_j = 125 °C, confirming suitability for hard-switched synchronous rectification.

IPP024N06N3GHKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 120A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 2.4mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 4V @ 196µA

Gate Charge (Qg) (Max) @ Vgs:: 275 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 23000 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 250W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3

IPP024N06N3GHKSA1 FAQ

1.How can I place an order for IPP024N06N3GHKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP024N06N3GHKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP024N06N3GHKSA1 reliable?

The price and inventory of IPP024N06N3GHKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP024N06N3GHKSA1 is usually 5 days.

3.What payment methods are accepted for IPP024N06N3GHKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP024N06N3GHKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP024N06N3GHKSA1?

IPP024N06N3GHKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP024N06N3GHKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP024N06N3GHKSA1?

For technical support, including IPP024N06N3GHKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP024N06N3GHKSA1 requirements.

6.How does Aetrix verify that IPP024N06N3GHKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP024N06N3GHKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP024N06N3GHKSA1 meets industry standards.

7.What is the process for return or replacement of IPP024N06N3GHKSA1?

All IPP024N06N3GHKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP024N06N3GHKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP024N06N3GHKSA1 part is unused and in its original packaging.

Return procedure for IPP024N06N3GHKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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