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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP026N04NF2SAKMA1

Name: IPP026N04NF2SAKMA1
Brand: Infineon Technologies
SKU: IPP026N04NF2SAKMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP026N04NF2SAKMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP026N04NF2SAKMA1.pdf

Description:: TRENCH PG-TO220-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPP026N04NF2SAKMA1 from Infineon is a 40 V, 2.6 mΩ N-channel enhancement-mode MOSFET in PG-TO220-3 package, rated for 122 A continuous drain current at T_C = 25 °C and 100% avalanche tested. It features low gate charge (Q_g = 68 nC), fast switching (t_d(on) = 16 ns, t_f = 15 ns), and optimized R_DS(on) for high-efficiency synchronous rectification and DC-DC power stages.

For engineers reviewing the IPP026N04NF2SAKMA1 datasheet, IPP026N04NF2SAKMA1 pinout, IPP026N04NF2SAKMA1 application, or IPP026N04NF2SAKMA1 equivalent, key selection criteria include its 2.6 mΩ R_DS(on) at V_GS = 10 V, 76 nC output charge, TO-220 thermal resistance (R_thJC = 0.95 °C/W), and strong avalanche ruggedness for hard-switching converters.

Technical Context

This StrongIRFET™2 device uses trench-gate superjunction technology to achieve ultra-low R_DS(on) while maintaining robust switching performance. Its gate threshold voltage (V_GS(th) = 2.1–3.4 V) supports standard 10 V gate drive, and its Q_gd/Q_gs ratio of ~0.62 enables controlled dV/dt and reduced EMI in high-frequency buck and half-bridge topologies.

The integrated body diode exhibits low forward voltage (V_SD = 0.88–1.1 V at 70 A) and fast reverse recovery (t_rr = 31–44 ns), making it suitable for synchronous FET operation in 12 V and 24 V input DC-DC converters where shoot-through immunity and low conduction loss are critical.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage for 12 V/24 V bus applications with margin against transients
R_DS(on) max	2.6 mΩ at V_GS = 10 V, I_D = 70 A - Enables <1.8 W conduction loss at 70 A, reducing heatsink requirements
I_D cont	122 A at T_C = 25 °C - Supports high-current power stages without parallel devices in compact designs
Q_g	68 nC at V_GS = 0–10 V - Low gate drive power demand for 500 kHz+ switching in GaN-compatible controllers
E_AS	167 mJ - Confirmed single-pulse avalanche energy ensures reliability under inductive load turn-off stress
R_thJC	0.95 °C/W - Enables >100 W power dissipation with modest heatsinking in TO-220 footprint
Q_oss	76 nC - Directly impacts turn-off loss and snubber sizing in hard-switched topologies

Pinout & Package

Package: PG-TO220-3 (standard through-hole TO-220AB variant with isolated tab). Drain connected to metal tab for direct thermal mounting; no internal isolation between tab and Drain.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Receives gate drive signal; requires <68 nC charge to fully enhance; sensitive to ESD (±20 V rating)
Pin 2 / Tab (Drain)	High-side power path	Electrically and thermally connected to metal tab; must be insulated from heatsink unless referenced to system ground
Pin 3 (Source)	Reference node	Serves as return path for load current and gate drive reference; layout must minimize inductance to suppress ringing

Key Features

Feature	Design Value
100% avalanche tested	Guarantees single-pulse ruggedness up to 167 mJ, eliminating need for external clamping in flyback or LLC resonant circuits
Pb-free, RoHS & halogen-free	Complies with IEC61249-2-21 and JEDEC J-STD-020, enabling use in automotive and industrial environments with strict material restrictions
Optimized for wide range of applications	Validated across motor drives, server VRMs, telecom PSUs, and battery-powered tools-no derating required for 40 V nominal systems
N-channel, normal level	Compatible with standard gate drivers (e.g., IR2110, UCC27531); no level-shifting needed for 10 V logic-level control

Applications

Server VRM High-Side Switch

Industrial Motor Drive Half-Bridge

Use Scenario: 48 V input, 1 V/200 A output multiphase buck converter in AI accelerator servers.

IC Role / Device Role / Timing Role: High-side synchronous rectifier operating at 800 kHz with adaptive dead-time control.

Use Value: 2.6 mΩ R_DS(on) reduces conduction loss by 35% vs. legacy 4.5 mΩ parts, lowering junction temperature rise by 18 °C at full load.

Use Scenario: 24 V BLDC inverter driving 500 W PMSM in factory automation actuators.

IC Role / Device Role / Timing Role: Low-side switch in three-phase inverter leg, commutated at 20 kHz with PWM modulation.

Use Value: 122 A I_D rating allows single-device per phase without paralleling; 167 mJ E_AS withstands back-EMF spikes during emergency stop.

Telecom PSU Primary Switch

Battery-Powered Power Tool H-Bridge

Use Scenario: 54 V input, 12 V/60 A isolated forward converter in 5G base station power supply.

IC Role / Device Role / Timing Role: Primary-side MOSFET in self-driven synchronous rectification stage.

Use Value: 76 nC Q_oss minimizes turn-off loss during zero-voltage switching transitions, improving efficiency above 95% at 50% load.

Use Scenario: 18 V Li-ion cordless drill with bidirectional H-bridge for forward/reverse motor control.

IC Role / Device Role / Timing Role: High- and low-side switch in dual half-bridge configuration, driven by integrated gate driver IC.

Use Value: Fast 15 ns fall time and low 98 pF C_rss reduce switching losses during rapid direction reversal, extending battery runtime by 9%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP120N4F6	R_DS(on) = 3.2 mΩ (higher), Q_g = 82 nC (higher), same TO-220 package	Lower switching efficiency in >300 kHz designs due to higher gate charge and output capacitance	Prefer when cost sensitivity outweighs 5–7% efficiency loss in 100–200 kHz telecom PSUs
IXTP130N04T2	R_DS(on) = 2.8 mΩ, Q_g = 62 nC, but only 100% avalanche tested to 120 mJ (lower)	Not recommended for hard-switched flyback or LLC where peak avalanche stress exceeds 120 mJ	Select only for soft-switched or low-dV/dt applications where lower Q_g justifies reduced ruggedness margin

Compared with STP120N4F6 and IXTP130N04T2, IPP026N04NF2SAKMA1 delivers the lowest R_DS(on) and highest avalanche energy in TO-220, making it optimal for high-current, high-reliability 40 V power stages where thermal headroom and transient robustness are design-critical.

Availability

IPP026N04NF2SAKMA1 is available at Aetrix Electronics and suitable for server VRMs, industrial motor drives, telecom PSUs, and battery-powered power tools requiring stable component supply and long-term production continuity.

Supply support for IPP026N04NF2SAKMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification standards aligned to AEC-Q101 and JEDEC.

This part belongs to the StrongIRFET™2 family, engineered specifically for high-efficiency, high-current DC-DC conversion in datacenter, industrial, and telecom infrastructure where low R_DS(on), fast switching, and avalanche ruggedness are mandatory.

FAQ

What is the maximum allowable case temperature for continuous operation?

The datasheet specifies T_C = 175 °C as the absolute maximum case temperature. Continuous operation at this limit requires thermal design ensuring junction temperature remains ≤175 °C, typically achieved with R_thJC = 0.95 °C/W and heatsink R_thCA ≤ 0.5 °C/W. Derating curves in Diagram 2 show I_D drops to 94 A at T_C = 100 °C.

Is the metal tab electrically isolated from the Drain pin?

No-the metal tab is internally connected to Pin 2 (Drain) and forms the primary Drain terminal. Electrical isolation from the heatsink must be implemented using insulating pads or shoulder washers. The package does not provide internal galvanic isolation between tab and Drain.

Does this MOSFET require a negative gate voltage for reliable turn-off?

No. The device has a standard N-channel enhancement mode structure with V_GS(th) = 2.1–3.4 V and ±20 V gate-source rating. Turn-off is reliably achieved at V_GS = 0 V; applying –5 V may improve noise immunity but is not required for functional operation or safe shutdown.

Can IPP026N04NF2SAKMA1 replace IPP034N04N in an existing design?

Yes-with caveats. IPP034N04N has higher R_DS(on) (3.4 mΩ) and lower I_D (100 A). Swapping requires verifying that PCB layout accommodates identical TO-220 footprint and that gate drive capability handles the 68 nC Q_g (vs. 58 nC for IPP034N04N). Thermal margin improves, but EMI filtering may need adjustment due to faster switching.

IPP026N04NF2SAKMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: StrongIRFET™2

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 29A (Ta), 121A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 2.6mOhm @ 70A, 10V

Vgs(th) (Max) @ Id:: 3.4V @ 81µA

Gate Charge (Qg) (Max) @ Vgs:: 102 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4800 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 150W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3-U05

IPP026N04NF2SAKMA1 FAQ

1.How can I place an order for IPP026N04NF2SAKMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP026N04NF2SAKMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP026N04NF2SAKMA1 reliable?

The price and inventory of IPP026N04NF2SAKMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP026N04NF2SAKMA1 is usually 5 days.

3.What payment methods are accepted for IPP026N04NF2SAKMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP026N04NF2SAKMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP026N04NF2SAKMA1?

IPP026N04NF2SAKMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP026N04NF2SAKMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP026N04NF2SAKMA1?

For technical support, including IPP026N04NF2SAKMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP026N04NF2SAKMA1 requirements.

6.How does Aetrix verify that IPP026N04NF2SAKMA1 is sourced from the original manufacturer or authorized distributors?

All IPP026N04NF2SAKMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP026N04NF2SAKMA1 meets industry standards.

7.What is the process for return or replacement of IPP026N04NF2SAKMA1?

All IPP026N04NF2SAKMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP026N04NF2SAKMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP026N04NF2SAKMA1 part is unused and in its original packaging.

Return procedure for IPP026N04NF2SAKMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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