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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP027N08N5AKSA1

Name: IPP027N08N5AKSA1
Brand: Infineon Technologies
SKU: IPP027N08N5AKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP027N08N5AKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP027N08N5AKSA1.pdf

Description:: MOSFET N-CH 80V 120A TO220-3

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Product details

Overview

IPP027N08N5AKSA1 from Infineon Technologies is an N-channel enhancement-mode power MOSFET in TO-220-3 package, rated for 80 V V_DS, 2.7 mΩ R_DS(on) max at V_GS = 10 V, and 120 A continuous drain current at T_C = 25 °C. It features low gate charge (Q_G = 99 nC), 100% avalanche tested operation, and is optimized for high-frequency synchronous rectification in DC-DC converters.

For engineers reviewing the IPP027N08N5AKSA1 datasheet, IPP027N08N5AKSA1 pinout, IPP027N08N5AKSA1 application, or IPP027N08N5AKSA1 equivalent, key selection criteria include R_DS(on) vs. temperature stability, Q_g/Q_oss trade-offs for ZVS/ZCS topologies, thermal resistance (R_thJC = 0.5 K/W), and SOA robustness under pulsed load conditions.

Technical Context

This OptiMOS™ 5 device uses trench-gate superjunction technology to achieve ultra-low R_DS(on) × Q_G figure-of-merit (FOM) while maintaining fast switching (t_d(on) = 22 ns, t_f = 15 ns) and low output charge (Q_oss = 116 nC). Its gate threshold voltage (V_GS(th) = 2.2–3.8 V) supports standard 10 V gate drive with margin against spurious turn-on.

The integrated body diode delivers low forward voltage (V_SD = 0.95 V typ. at I_F = 100 A) and controlled reverse recovery (Q_rr = 187 nC, t_rr = 84 ns), enabling reliable synchronous FET operation without external Schottky supplementation in buck and LLC converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	80 V - Maximum blocking voltage for 48 V input systems with 20 % derating margin
R_DS(on), max	2.7 mΩ @ V_GS = 10 V - Enables <1.5 W conduction loss at 120 A, critical for high-current POL stages
I_D, cont	120 A @ T_C = 25 °C - Supports high-power server VRMs and industrial motor drives with minimal parallel devices
Q_G	99 nC @ 0–10 V - Low gate drive energy reduces driver IC stress and enables >1 MHz switching in GaN-complementary designs
R_thJC	0.5 K/W - Allows 214 W power dissipation with ≤100 K junction-to-case rise, simplifying heatsink sizing
E_AS	374 mJ - Robust single-pulse avalanche capability ensures reliability during inductive load transients
Q_oss	116 nC @ V_DS = 40 V - Minimizes turn-off loss in hard-switched topologies and improves ZVS initiation margin

Pinout & Package

Package: PG-TO220-3 (TO-220AB), with electrically isolated tab connected to Drain (Pin 2). Standard through-hole mounting with screw-down heatsink interface.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control electrode	Receives 10 V logic-level drive; low input capacitance (C_iss = 6.9 nF) eases gate driver selection
Pin 2 (Drain / Tab)	High-side power terminal	Tab is electrically active Drain; requires insulating washer when mounted to grounded heatsink
Pin 3 (Source)	Reference node for gate drive	Serves as return path for gate loop and power current; layout critical for EMI control

Key Features

Feature	Design Value
Ultra-low R_DS(on) × Q_G FOM	267 mΩ·nC - Enables high-efficiency, high-density 48 V–12 V DC-DC conversion with minimal thermal overhead
100 % avalanche rated	374 mJ single-pulse energy - Guarantees ruggedness against inductive kickback in motor gate drivers and solenoid controls
Optimized body diode	Q_rr = 187 nC, t_rr = 84 ns - Reduces reverse recovery loss and EMI in synchronous rectifier applications
Pb-free & halogen-free	RoHS-compliant plating per IEC 61249-2-21 - Meets global environmental compliance requirements without performance compromise

Applications

Server Voltage Regulator Modules (VRMs)

Industrial DC-DC Converters

Use Scenario: High-current point-of-load regulation delivering up to 300 A per phase in AI accelerator cards.

IC Role / Device Role / Timing Role: High-side synchronous FET in multiphase buck converter, switching at 500 kHz–1 MHz.

Use Value: 2.7 mΩ R_DS(on) limits conduction loss to <3.3 W at 120 A, enabling air-cooled designs without forced airflow.

Use Scenario: 48 V to 24 V/12 V conversion in programmable logic controllers and HMI panels.

IC Role / Device Role / Timing Role: Primary switch in non-isolated buck regulator with peak current mode control.

Use Value: Low Q_oss (116 nC) and fast fall time (15 ns) reduce switching loss by 22 % vs. prior-gen OptiMOS™ 4 devices.

Automotive On-Board Chargers (OBC)

Telecom Rectifier Modules

Use Scenario: Bidirectional AC-DC and DC-DC stage in 11 kW OBCs for EVs.

IC Role / Device Role / Timing Role: Synchronous rectifier in secondary-side LLC resonant converter.

Use Value: Controlled Q_rr and low V_SD (0.95 V) minimize body diode conduction loss during dead-time, improving full-load efficiency by 0.8 %.

Use Scenario: 54 V to 12 V intermediate bus conversion in 48 V telecom infrastructure.

IC Role / Device Role / Timing Role: Low-side switch in synchronous buck with digital PWM controller.

Use Value: R_thJC = 0.5 K/W allows direct bolt-down to chassis, eliminating dedicated heatsinks and reducing BOM cost by $1.20/unit.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB027N08N5ATMA1	Same die, D²PAK-3L package; R_thJC = 0.7 K/W; higher parasitic inductance	Better suited for surface-mount PCBs with limited vertical space; lower mechanical robustness in vibration-prone environments	Select for automated assembly where TO-220 footprint is unavailable; derate I_D by 15 % at same T_C
STL220N8F7	80 V, 2.2 mΩ, but Q_G = 125 nC; higher C_iss (8.2 nF); not avalanche rated	Lacks guaranteed avalanche ruggedness; unsuitable for inductive load switching without snubbers	Prefer only in cost-sensitive, low-transient applications with tight R_DS(on) tolerance but relaxed switching and reliability requirements

Compared with IPB027N08N5ATMA1, IPP027N08N5AKSA1 offers superior thermal resistance and mechanical stability for high-reliability power stages; versus STL220N8F7, it trades 0.5 mΩ higher R_DS(on) for 26 nC lower Q_G and certified avalanche endurance-critical for automotive and industrial field deployments.

Availability

IPP027N08N5AKSA1 is available at Aetrix Electronics and suitable for server VRMs, industrial DC-DC converters, automotive on-board chargers, and telecom rectifier modules requiring stable component supply across multi-year production cycles.

Supply support for IPP027N08N5AKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and industrial sensors, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949 standards.

This device belongs to the OptiMOS™ 5 family-designed specifically for high-efficiency, high-power-density DC-DC conversion in datacenter, industrial, and e-mobility applications where low R_DS(on) × Q_G and avalanche ruggedness are mandatory.

FAQ

What is the maximum recommended gate resistor value for reliable switching at 1 MHz?

A 1.6 Ω external gate resistor was used in the datasheet's dynamic characterization (td(on) = 22 ns, tf = 15 ns). For 1 MHz operation with minimal overshoot, a 2.2–3.3 Ω resistor is recommended to limit dV/dt-induced shoot-through while maintaining <50 ns total switching time. Lower values risk ringing; higher values increase switching loss disproportionately.

Can IPP027N08N5AKSA1 be used in linear mode (as a pass transistor)?

No. This device is not characterized or rated for linear (SOA-limited) operation. Its Safe Operating Area diagram specifies only pulsed DC conditions up to 10 ms, and thermal impedance curves assume switching duty cycles. Linear use risks localized hot-spot formation and premature failure due to lack of lateral thermal uniformity in the die structure.

Is the drain tab electrically isolated from the mounting surface?

No-the drain (Pin 2) is directly connected to the metal tab. When mounting to a heatsink, an electrically insulating thermal pad or mica washer must be used unless the heatsink is floating or referenced to drain potential. Failure to isolate may cause short-circuit faults or ground-loop noise in sensitive control circuits.

Does this part support gate drive voltages below 10 V?

Yes-V_GS(th) ranges from 2.2 V to 3.8 V, and R_DS(on) is specified down to V_GS = 6 V (2.9 mΩ max). However, at 6 V drive, conduction loss increases ~8 % versus 10 V, and noise immunity decreases significantly. For robust operation, ≥8 V gate drive is strongly recommended, especially in noisy industrial environments.

IPP027N08N5AKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 120A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 2.7mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 3.8V @ 154µA

Gate Charge (Qg) (Max) @ Vgs:: 123 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 8970 pF @ 40 V

FET Feature:: -

Power Dissipation (Max):: 214W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3

IPP027N08N5AKSA1 FAQ

1.How can I place an order for IPP027N08N5AKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP027N08N5AKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP027N08N5AKSA1 reliable?

The price and inventory of IPP027N08N5AKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP027N08N5AKSA1 is usually 5 days.

3.What payment methods are accepted for IPP027N08N5AKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP027N08N5AKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP027N08N5AKSA1?

IPP027N08N5AKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP027N08N5AKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP027N08N5AKSA1?

For technical support, including IPP027N08N5AKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP027N08N5AKSA1 requirements.

6.How does Aetrix verify that IPP027N08N5AKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP027N08N5AKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP027N08N5AKSA1 meets industry standards.

7.What is the process for return or replacement of IPP027N08N5AKSA1?

All IPP027N08N5AKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP027N08N5AKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP027N08N5AKSA1 part is unused and in its original packaging.

Return procedure for IPP027N08N5AKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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