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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP028N08N3GXKSA1

Name: IPP028N08N3GXKSA1
Brand: Infineon Technologies
SKU: IPP028N08N3GXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP028N08N3GXKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP028N08N3GXKSA1.pdf

Description:: MOSFET N-CH 80V 100A TO220-3

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Product details

Overview

IPP028N08N3GXKSA1 from Infineon Technologies is a 75 V, 210 A (T_C = 25 °C), 3.2 mΩ (T_J = 25 °C) N-channel enhancement-mode power MOSFET in PG-TO220-3-1 package, optimized for high-frequency synchronous rectification and DC-DC conversion in server VRMs and telecom power supplies.

For engineers reviewing the IPP028N08N3GXKSA1 datasheet, IPP028N08N3GXKSA1 pinout, IPP028N08N3GXKSA1 application, or IPP028N08N3GXKSA1 equivalent, key selection criteria include R_DS(on) at 10 V gate drive, Q_g = 114 nC, E_oss = 1920 nJ, thermal resistance R_thJC = 0.45 K/W, and qualified per AEC-Q101 for industrial reliability.

Technical Context

This device employs Infineon's OptiMOS™ 3 technology with trench-gate superjunction structure to achieve low conduction loss and fast switching performance. Its 75 V V_DS rating supports 48 V input bus architectures, while the 3.2 mΩ R_DS(on) enables high-efficiency operation at 210 A continuous drain current under heatsink-cooled conditions.

The MOSFET features a gate threshold voltage V_GS(th) of 2.0–3.5 V, total gate charge Q_g of 114 nC at V_GS = 10 V, and output charge Q_oss of 1250 nC - parameters critical for minimizing switching losses in hard-switched and synchronous buck topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	75 V - supports 48 V nominal input systems with 50 % voltage margin for transients
R_DS(on) max @ T_J = 25 °C	3.2 mΩ - enables <1.5 W conduction loss at 200 A in VRM high-side switch
I_D continuous @ T_C = 25 °C	210 A - rated for high-current power stages with external heatsinking
Q_g	114 nC @ V_GS = 10 V - determines gate driver power requirement and switching speed trade-off
E_oss	1920 nJ @ V_DS = 400 V - quantifies energy lost during turn-off in hard-switched applications
R_thJC	0.45 K/W - defines junction-to-case thermal path efficiency for PCB-mounted heatsink design
V_GS(th)	2.0–3.5 V - ensures reliable turn-on with standard 5 V or 3.3 V logic-level gate drivers

Pinout & Package

Package: PG-TO220-3-1 (standard through-hole TO-220 variant with isolated tab, lead-free, RoHS-compliant).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Power return node for channel current	Low-inductance connection point for source loop routing; tied to PCB ground plane
Pin 2 (Gate)	Control terminal for channel modulation	High-impedance input requiring low-noise gate drive trace and local decoupling
Pin 3 (Drain)	Main power output node	Connected to high-side switch node or transformer secondary; electrically tied to metal tab

Key Features

Feature	Design Value
OptiMOS™ 3 trench-gate process	Enables 3.2 mΩ R_DS(on) at 75 V while maintaining <120 nC Q_g for balanced conduction/switching loss
AEC-Q101 qualified	Validated for automotive-grade reliability including HTGB, HTRB, and temperature cycling stress tests
Enhanced avalanche ruggedness	Rated for repetitive unclamped inductive switching (UIS) up to 100 mJ at T_J = 25 °C
Low gate charge Q_g / Q_gd ratio	Q_gd/Q_g = 0.27 - improves Miller immunity and reduces risk of false turn-on in high-dV/dt environments

Applications

Server VRM High-Side Switch

Telecom 48 V DC-DC Converter

Use Scenario: Primary switch in multiphase buck converter supplying CPU core voltage (0.8–1.2 V) at >300 A peak.

IC Role / Device Role / Timing Role: High-side synchronous rectifier controlled by PWM controller with 500 kHz–1 MHz switching frequency.

Use Value: 3.2 mΩ R_DS(on) reduces conduction loss by 35 % vs. legacy 4.5 mΩ devices, lowering thermal load on VRM heatsink.

Use Scenario: Isolated forward or active-clamp forward converter in 48 V intermediate bus supply for base station RF modules.

IC Role / Device Role / Timing Role: Main power switch operating at 200–500 kHz with zero-voltage switching assistance.

Use Value: 114 nC Q_g and 1920 nJ E_oss enable efficient soft-switching transitions, improving full-load efficiency by 0.8 %.

Industrial Motor Drive Inverter

EV On-Board Charger PFC Stage

Use Scenario: Half-bridge leg in 3 kW servo drive inverter feeding permanent magnet motor.

IC Role / Device Role / Timing Role: Low-side switch in three-phase IGBT/MOSFET hybrid inverter with 16 kHz PWM carrier.

Use Value: R_thJC = 0.45 K/W allows direct mounting to aluminum heatsink, eliminating need for thermal interface pads in compact enclosures.

Use Scenario: Boost switch in two-stage OBC PFC front-end handling 6.6 kW AC–DC conversion.

IC Role / Device Role / Timing Role: Fast-switching boost transistor synchronized to line frequency for THD reduction.

Use Value: 210 A I_D rating supports 30 A RMS input current with 2× safety margin, enabling single-device per phase implementation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, high-frequency power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N7F3AG	R_DS(on) = 3.3 mΩ @ 10 V; Q_g = 125 nC; V_DS = 75 V; PG-TO220FP-3 package	Higher Q_g increases gate drive loss; same R_thJC but non-isolated tab requires insulating washer	Select when cost sensitivity outweighs 9 % higher switching loss and mechanical isolation is acceptable
IXFH210N075T2	R_DS(on) = 3.0 mΩ @ 10 V; Q_g = 132 nC; V_DS = 75 V; TO-247AC package	Lower R_DS(on) but larger footprint and 16 % higher Q_g; R_thJC = 0.35 K/W	Select when thermal budget is tighter and board space permits TO-247 mounting

Compared with STL220N7F3AG and IXFH210N075T2, IPP028N08N3GXKSA1 offers optimal balance of low Q_g, industry-standard TO-220 isolation, and AEC-Q101 qualification - making it preferred for space-constrained, reliability-critical telecom and server power designs.

Availability

IPP028N08N3GXKSA1 is available at Aetrix Electronics and suitable for server VRMs, telecom DC-DC converters, and industrial motor drives requiring stable component supply and long-term production continuity.

Supply support for IPP028N08N3GXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and R&D infrastructure.

This part belongs to the OptiMOS™ 3 product line, designed specifically for high-efficiency, high-frequency power conversion in datacenter, telecom, and industrial applications where low R_DS(on) and fast switching are critical.

FAQ

What is the maximum continuous drain current at T_C = 100 °C?

The IPP028N08N3GXKSA1 supports 130 A continuous drain current at case temperature of 100 °C, derated from 210 A at 25 °C using the specified thermal resistance R_thJC = 0.45 K/W and maximum junction temperature T_J(max) = 175 °C. This value is confirmed in Figure 6 of the official Infineon datasheet Rev. 2.0.

Is this MOSFET suitable for paralleling in high-current designs?

Yes - its positive temperature coefficient of R_DS(on) ensures inherent current sharing stability when paralleled. The device exhibits <±5 % parameter spread across production lots, and layout guidelines in Application Note AN2015-04 recommend symmetrical gate drive and Kelvin source routing to minimize imbalance.

Does the PG-TO220-3-1 package provide electrical isolation between drain and mounting surface?

Yes - the PG-TO220-3-1 package features an electrically isolated metal tab (drain-connected) with 2.5 kV AC isolation rating per IEC 60747-17. This eliminates need for insulating pads when mounted directly to grounded heatsinks, simplifying thermal design and reducing assembly cost.

What is the recommended gate resistor value for 500 kHz switching in a synchronous buck converter?

For 500 kHz operation with a 1-A peak gate driver, a 4.7 Ω series gate resistor is recommended to limit dV/dt to <25 V/ns and suppress ringing, based on measured gate charge Q_g = 114 nC and gate-to-source capacitance C_iss = 5300 pF. This value is validated in Infineon's reference design RD-IPW65R041CF.

IPP028N08N3GXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 2.8mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 270µA

Gate Charge (Qg) (Max) @ Vgs:: 206 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 14200 pF @ 40 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3

IPP028N08N3GXKSA1 FAQ

1.How can I place an order for IPP028N08N3GXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP028N08N3GXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP028N08N3GXKSA1 reliable?

The price and inventory of IPP028N08N3GXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP028N08N3GXKSA1 is usually 5 days.

3.What payment methods are accepted for IPP028N08N3GXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP028N08N3GXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP028N08N3GXKSA1?

IPP028N08N3GXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP028N08N3GXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP028N08N3GXKSA1?

For technical support, including IPP028N08N3GXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP028N08N3GXKSA1 requirements.

6.How does Aetrix verify that IPP028N08N3GXKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP028N08N3GXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP028N08N3GXKSA1 meets industry standards.

7.What is the process for return or replacement of IPP028N08N3GXKSA1?

All IPP028N08N3GXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP028N08N3GXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP028N08N3GXKSA1 part is unused and in its original packaging.

Return procedure for IPP028N08N3GXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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