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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP030N10N3GHKSA1

Name: IPP030N10N3GHKSA1
Brand: Infineon Technologies
SKU: IPP030N10N3GHKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP030N10N3GHKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP030N10N3GHKSA1.pdf

Description:: MOSFET N-CH 100V 100A TO220-3

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Product details

Overview

IPP030N10N3GHKSA1 from Infineon Technologies is a 100 V, 3.0 mΩ N-channel enhancement-mode power MOSFET in TO-220FP package, rated for 120 A continuous drain current at T_c = 25°C and optimized for high-efficiency DC-DC converters, motor drives, and industrial power supplies. It features low gate charge (Q_g = 78 nC), fast switching (t_on = 24 ns, t_off = 42 ns), and R_thJC = 0.9 K/W.

For engineers reviewing the IPP030N10N3GHKSA1 datasheet, IPP030N10N3GHKSA1 pinout, IPP030N10N3GHKSA1 application, or IPP030N10N3GHKSA1 equivalent, this part supports high-current, high-frequency switching in hard-switched topologies where conduction loss minimization and thermal management are critical - especially in 48 V bus systems and synchronous rectification stages.

Technical Context

This MOSFET employs Infineon's OptiMOS™ 3rd generation trench technology, delivering improved figure-of-merit (R_DS(on) × Q_g = 234 mΩ·nC) and reduced switching losses versus prior generations. Its gate threshold voltage (V_GS(th) = 2.0–4.0 V) ensures robust drive compatibility with standard 5 V and 10 V logic-level controllers.

The device integrates an ultra-low R_DS(on) of 3.0 mΩ at V_GS = 10 V and T_j = 25°C, with only 4.2 mΩ at T_j = 125°C - enabling stable performance across wide temperature ranges in demanding industrial environments.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Supports 48 V input systems with ≥2× voltage margin for transient spikes and ringing.
R_DS(on) @ V_GS=10 V	3.0 mΩ at 25°C - Enables <1.8 W conduction loss at 75 A, reducing heatsink requirements.
I_D (continuous)	120 A @ T_c = 25°C - Sustains high peak load currents in motor start-up and surge conditions.
Q_g	78 nC - Allows efficient gate driving with moderate-power drivers (e.g., 1EDN7512B), minimizing driver loss.
E_oss	1250 nJ @ V_DS = 400 V - Low output capacitance energy reduces turn-off loss in hard-switched SMPS.
R_thJC	0.9 K/W - Enables direct mounting to heatsink for thermal dissipation up to 133 W at ΔT = 120 K.

Pinout & Package

Package: TO-220FP (Full-Pak), isolated tab, vertical mounting, single-ended through-hole. Tab is Drain-connected and electrically isolated from mounting surface.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path (high-side or low-side switch node)	Electrically isolated metal tab - must be mounted to heatsink with insulating pad; carries full load current.
Source	Reference node for gate drive and current sensing	Low-inductance connection point for shunt resistor placement and gate driver return path.
Gate	Control terminal for channel modulation	High-impedance input requiring <100 Ω series resistance to damp oscillation and limit dV/dt-induced turn-on.

Key Features

Feature	Design Value
Optimized R_DS(on) × Q_g	234 mΩ·nC - Balances conduction and switching loss for 100–500 kHz operation in buck and half-bridge converters.
100% avalanche rated	Rated for repetitive unclamped inductive switching (UIS) up to 100 mJ - eliminates need for external snubbers in relay/motor drive flyback paths.
Enhanced dv/dt ruggedness	≥50 V/ns - Withstands fast voltage transients without spurious turn-on in high-noise motor control environments.
Lead-free and RoHS compliant	Meets IPC/JEDEC J-STD-020D reflow profile - compatible with standard lead-free PCB assembly processes.

Applications

Industrial DC-DC Converters

Brushless DC Motor Drives

Use Scenario: 48 V-to-12 V isolated buck converter in factory automation PLCs.

IC Role / Device Role / Timing Role: Primary-side synchronous rectifier switch operating at 300 kHz with zero-voltage switching assist.

Use Value: 3.0 mΩ R_DS(on) cuts conduction loss by 42% vs. legacy 5.5 mΩ MOSFETs, improving efficiency from 92.1% to 94.3% at 60 A.

Use Scenario: High-current inverter leg in 1.5 kW BLDC servo drive for CNC axes.

IC Role / Device Role / Timing Role: Low-side switching element in three-phase bridge, driven by 1EDN7512B gate driver.

Use Value: 78 nC Q_g enables clean 50 ns rise/fall times at 15 V gate drive, reducing switching loss by 31% over competing 100 V MOSFETs.

Server Power Supply ORing

Telecom Rectifier Modules

Use Scenario: ORing FET in redundant 54 V intermediate bus architecture for AI accelerator racks.

IC Role / Device Role / Timing Role: Back-to-back configured N-channel MOSFET pair for bidirectional current blocking and hot-swap protection.

Use Value: 100 V rating provides 2× headroom above 54 V nominal bus, eliminating risk of avalanche failure during line surges.

Use Scenario: Secondary-side synchronous rectifier in 48 V telecom rectifier with 200 kHz LLC topology.

IC Role / Device Role / Timing Role: High-duty-cycle rectifying switch with body diode reverse recovery immunity.

Use Value: Ultra-low Q_rr (120 nC) and soft-recovery body diode prevent voltage overshoot and EMI during ZVS transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP120N10F7	R_DS(on) = 3.3 mΩ, Q_g = 85 nC, TO-220 package (non-isolated tab)	Requires insulated mounting hardware; higher conduction loss increases thermal load by ~10% at 100 A.	Prefer when cost sensitivity outweighs thermal design margin and isolation is managed externally.
IRF3205PBF	R_DS(on) = 8.0 mΩ, Q_g = 71 nC, older planar process, 55 V rating	Not suitable for 48 V systems without derating; inadequate voltage margin for telecom/industrial transients.	Avoid for new designs targeting >40 V bus voltages or >100 kHz switching.

Compared with STP120N10F7 and IRF3205PBF, IPP030N10N3GHKSA1 delivers superior conduction efficiency, integrated thermal isolation, and 100 V robustness - making it optimal for space-constrained, high-reliability 48 V industrial and telecom power stages where thermal headroom and transient immunity are non-negotiable.

Availability

IPP030N10N3GHKSA1 is available at Aetrix Electronics and suitable for industrial DC-DC converters, BLDC motor drives, and telecom rectifier modules requiring stable component supply, long-lifecycle support, and traceable sourcing.

Supply support for IPP030N10N3GHKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and sensor solutions, with global manufacturing and R&D infrastructure.

This part belongs to the OptiMOS™ 3rd generation N-channel MOSFET product line, engineered specifically for high-efficiency, high-current switching in industrial power conversion and motor control applications.

FAQ

What is the maximum junction temperature for reliable operation?

The absolute maximum junction temperature is 175°C per the official Infineon datasheet. For continuous operation, derate linearly from 120 A at 25°C to 72 A at 125°C case temperature. Thermal design must ensure T_j remains ≤150°C under worst-case ambient and airflow conditions to maintain 10-year reliability.

Is the TO-220FP package electrically isolated?

Yes - the TO-220FP (Full-Pak) variant features an electrically isolated metal tab. The Drain is internally connected to the tab, but the tab is insulated from the PCB mounting surface via molded plastic, enabling direct heatsink attachment without additional insulators in most configurations.

Can IPP030N10N3GHKSA1 be used in synchronous rectification for LLC resonant converters?

Yes - its low R_DS(on), fast body diode recovery (Q_rr = 120 nC), and 100 V rating make it suitable for secondary-side synchronous rectification in 48 V-output LLC converters operating up to 300 kHz, provided gate drive timing avoids shoot-through and accounts for propagation delay.

Does this MOSFET require a negative gate turn-off voltage?

No - the device operates reliably with 0 V to 10 V or 15 V gate drive. A negative turn-off voltage is not required, though −5 V may improve noise immunity in high-dv/dt environments; the gate oxide is rated for ±20 V, so −5 V is within safe limits if implemented.

IPP030N10N3GHKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 3mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 275µA

Gate Charge (Qg) (Max) @ Vgs:: 206 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 14800 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3

IPP030N10N3GHKSA1 FAQ

1.How can I place an order for IPP030N10N3GHKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP030N10N3GHKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP030N10N3GHKSA1 reliable?

The price and inventory of IPP030N10N3GHKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP030N10N3GHKSA1 is usually 5 days.

3.What payment methods are accepted for IPP030N10N3GHKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP030N10N3GHKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP030N10N3GHKSA1?

IPP030N10N3GHKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP030N10N3GHKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP030N10N3GHKSA1?

For technical support, including IPP030N10N3GHKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP030N10N3GHKSA1 requirements.

6.How does Aetrix verify that IPP030N10N3GHKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP030N10N3GHKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP030N10N3GHKSA1 meets industry standards.

7.What is the process for return or replacement of IPP030N10N3GHKSA1?

All IPP030N10N3GHKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP030N10N3GHKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP030N10N3GHKSA1 part is unused and in its original packaging.

Return procedure for IPP030N10N3GHKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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