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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP030N10N3GXKSA1

Name: IPP030N10N3GXKSA1
Brand: Infineon Technologies
SKU: IPP030N10N3GXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP030N10N3GXKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP030N10N3GXKSA1.pdf

Description:: MOSFET N-CH 100V 100A TO220-3

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Product details

Overview

IPP030N10N3GXKSA1 from Infineon Technologies is a 100 V, 3 mΩ N-channel enhancement-mode power MOSFET in PG-TO220-3 package, optimized for high-frequency switching and synchronous rectification in DC-DC converters and motor drives. It delivers 100 A continuous drain current at T_C = 25 °C, supports 175 °C junction operation, and features low gate charge (Q_g = 155–206 nC) and excellent FOM (Q_g × R_DS(on)).

For engineers reviewing the IPP030N10N3GXKSA1 datasheet, IPP030N10N3GXKSA1 pinout, IPP030N10N3GXKSA1 application, or IPP030N10N3GXKSA1 equivalent, key selection criteria include R_DS(on) stability over temperature, avalanche ruggedness (E_AS = 1000 mJ), gate drive compatibility (V_GS(th) = 2.0–3.5 V), and thermal resistance (R_thJC = 0.5 K/W).

Technical Context

This OptiMOS™3 device uses trench-gate superjunction technology to achieve ultra-low R_DS(on) while maintaining fast switching performance. Its dynamic parameters-C_iss = 11.1–14.8 nF, C_oss = 1.94–2.58 nF, and Q_gd = 28 nC-support efficient hard-switching up to several hundred kHz.

The integrated body diode exhibits t_rr = 86 ns and Q_rr = 232 nC at I_F = 100 A, enabling robust synchronous rectification. Gate plateau voltage is 4.4 V, aligning with standard 5 V and 10 V logic-level drivers without requiring level-shifting circuitry.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - rated blocking voltage for 48 V bus and 36 V automotive systems
R_DS(on) max	3 mΩ at V_GS = 10 V, I_D = 100 A - enables <1 W conduction loss at 100 A
I_D cont.	100 A at T_C = 25 °C - supports high-current power stages without parallel devices
E_AS	1000 mJ - withstands single-pulse inductive energy without failure in motor control
Q_g	155–206 nC - determines gate driver power requirement and switching speed trade-off
R_thJC	0.5 K/W - allows 300 W dissipation with ≤150 K case-to-junction rise at steady state
V_GS(th)	2.0–3.5 V - ensures reliable turn-on with 3.3 V or 5 V microcontroller GPIO
t_r/t_f	58 ns / 28 ns - supports >500 kHz PWM in LLC and phase-shifted full-bridge topologies

Pinout & Package

Package: PG-TO220-3 (standard through-hole, isolated tab, lead-free RoHS-compliant plating). Thermal pad electrically connected to drain.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Low-side reference node; connects to PCB ground plane or source return path
Pin 2 (Gate)	Control input	High-impedance MOSFET gate; requires <200 Ω series resistor to suppress ringing
Pin 3 (Drain)	Power output / high-side switch node	Internally bonded to metal tab; must be thermally and electrically connected to heatsink

Key Features

Feature	Design Value
Optimized Q_g × R_DS(on) figure-of-merit	Enables higher efficiency than prior-generation MOSFETs at 250–500 kHz switching frequencies
175 °C maximum junction temperature	Supports operation in sealed enclosures or high-ambient industrial environments without derating
JEDEC-qualified for target applications	Validated per J-STD-20 reflow and JESD22 reliability standards for production use
Low reverse recovery charge (Q_rr = 232 nC)	Reduces cross-conduction losses and EMI in synchronous buck and half-bridge configurations
Pb-free, RoHS-compliant plating	Meets EU Directive 2011/65/EU and IPC-J-STD-020 moisture sensitivity level 1

Applications

Server VRM

Industrial Motor Drive

Use Scenario: 48 V input, 1 V/200 A output multiphase buck converter for CPU core power delivery.

IC Role / Device Role / Timing Role: High-side synchronous rectifier MOSFET in interleaved phase leg.

Use Value: 3 mΩ R_DS(on) reduces conduction loss by >35% vs. 4.5 mΩ alternatives, improving VRM efficiency at full load.

Use Scenario: 24–48 V BLDC inverter for HVAC fan and pump control.

IC Role / Device Role / Timing Role: Low-side switching element in three-phase bridge with PWM frequency ≥20 kHz.

Use Value: 175 °C rating permits operation in enclosed cabinets without forced air, reducing system cooling cost.

Telecom PSU

Automotive DC-DC Converter

Use Scenario: 54 V input, 12 V/60 A isolated forward converter for base station power.

IC Role / Device Role / Timing Role: Primary-side active clamp switch handling repetitive avalanche stress.

Use Value: 1000 mJ E_AS sustains clamping energy during transient overloads without derating.

Use Scenario: 12 V battery input, 5 V/15 A buck converter for ADAS camera module power.

IC Role / Device Role / Timing Role: Main power switch in automotive-grade non-isolated DC-DC regulator.

Use Value: V_GS(th) range (2.0–3.5 V) ensures robust turn-on across cold-crank (6 V) to load-dump (18 V) conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N10F7	R_DS(on) = 2.2 mΩ @ 10 V, but higher Q_g = 240 nC; TO-220FP package with insulated tab	Better conduction loss, but slower switching and higher gate drive loss	Prefer for low-frequency, high-current applications where thermal mass dominates
IRF3205PBF	R_DS(on) = 8.0 mΩ @ 10 V; older planar process; lower E_AS = 520 mJ	Lower cost but significantly higher conduction loss and reduced ruggedness	Acceptable only in legacy designs with ample thermal margin and no avalanche stress

Compared with STL220N10F7 and IRF3205PBF, IPP030N10N3GXKSA1 offers superior switching efficiency due to its balanced Q_g × R_DS(on), verified avalanche capability, and extended temperature rating-making it optimal for new high-density, high-reliability power stages.

Availability

IPP030N10N3GXKSA1 is available at Aetrix Electronics and suitable for server VRMs, industrial motor drives, telecom PSUs, and automotive DC-DC converters requiring stable component supply and long-term manufacturability.

Supply support for IPP030N10N3GXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to the OptiMOS™3 product line, engineered specifically for high-efficiency, high-frequency power conversion in server, telecom, and industrial applications where low R_DS(on) and fast switching are critical.

FAQ

Is IPP030N10N3GXKSA1 suitable for synchronous rectification in a 48 V to 12 V buck converter?

Yes. With R_DS(on) = 3 mΩ and Q_rr = 232 nC, it minimizes both conduction and switching losses in high-current synchronous rectifiers. Its 100 A rating and 175 °C operation allow sustained 60 A output with conservative thermal design on a 6 cm² copper area.

What is the recommended gate resistor value for hard-switching at 300 kHz?

A 10–15 Ω series gate resistor is recommended to dampen ringing while maintaining t_r/t_f < 100 ns. This balances EMI suppression against gate driver power dissipation (P_gate ≈ 0.5 × Q_g × f_sw × V_GS² ≈ 0.9 W at 10 V drive and 300 kHz).

Does this MOSFET require a negative gate turn-off voltage?

No. The gate threshold voltage (2.0–3.5 V) and positive-only V_GS rating (±20 V) confirm safe operation with 0 V to 10 V gate drive. Negative turn-off is unnecessary and not supported by the internal structure.

Can IPP030N10N3GXKSA1 replace IPP040N10N3 in an existing design?

Yes, with minor layout review. Both share PG-TO220-3 package and pinout, but IPP030N10N3GXKSA1 has 25% lower R_DS(on) (3 mΩ vs. 4 mΩ) and slightly higher Q_g. Thermal and gate drive margins improve, though PCB copper area should verify junction temperature remains <150 °C under peak load.

IPP030N10N3GXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 3mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 275µA

Gate Charge (Qg) (Max) @ Vgs:: 206 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 14800 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3

IPP030N10N3GXKSA1 FAQ

1.How can I place an order for IPP030N10N3GXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP030N10N3GXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP030N10N3GXKSA1 reliable?

The price and inventory of IPP030N10N3GXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP030N10N3GXKSA1 is usually 5 days.

3.What payment methods are accepted for IPP030N10N3GXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP030N10N3GXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP030N10N3GXKSA1?

IPP030N10N3GXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP030N10N3GXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP030N10N3GXKSA1?

For technical support, including IPP030N10N3GXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP030N10N3GXKSA1 requirements.

6.How does Aetrix verify that IPP030N10N3GXKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP030N10N3GXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP030N10N3GXKSA1 meets industry standards.

7.What is the process for return or replacement of IPP030N10N3GXKSA1?

All IPP030N10N3GXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP030N10N3GXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP030N10N3GXKSA1 part is unused and in its original packaging.

Return procedure for IPP030N10N3GXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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