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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP033N04NF2SAKMA1

Name: IPP033N04NF2SAKMA1
Brand: Infineon Technologies
SKU: IPP033N04NF2SAKMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP033N04NF2SAKMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP033N04NF2SAKMA1.pdf

Description:: TRENCH PG-TO220-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPP033N04NF2SAKMA1 from Infineon is an N-channel enhancement-mode MOSFET in PG-TO220-3 package, rated for 40 V drain-source voltage, 3.3 mΩ typical R_DS(on) at V_GS = 10 V, 113 A continuous drain current, and 100% avalanche tested. It serves as a high-efficiency power switch in DC-DC converters, motor drives, and e-mobility on-board chargers.

For engineers reviewing the IPP033N04NF2SAKMA1 datasheet, IPP033N04NF2SAKMA1 pinout, IPP033N04NF2SAKMA1 application, or IPP033N04NF2SAKMA1 equivalent, key selection criteria include R_DS(on) at 70 A, gate charge Q_g = 45 nC, thermal resistance R_thJC = 1.4 °C/W, and avalanche energy E_AS = 71 mJ - all critical for high-current switching reliability and thermal management in compact power stages.

Technical Context

This StrongIRFET™2 device uses trench-gate superjunction technology optimized for low conduction and switching losses in hard-switched topologies. Its 40 V rating targets 12–24 V input systems, with gate threshold voltage V_GS(th) = 2.1–3.4 V enabling robust drive compatibility with standard 5 V or 3.3 V logic-level controllers.

The MOSFET integrates a fast, soft-recovery body diode (t_rr = 27–41 ns, Q_rr = 39–94 nC) and supports synchronous rectification with Q_g(sync) = 40 nC at V_GS = 0.1 V to 10 V. Thermal design leverages low R_thJC (1.4 °C/W) and a copper-tab TO220 package for direct heatsink mounting.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage compatible with 24 V nominal bus systems and transient overvoltage margins up to 40 V.
R_DS(on) max	3.3 mΩ at V_GS = 10 V, I_D = 70 A - Enables <1.5 W conduction loss at 70 A, supporting high-current, low-voltage power stages.
I_D cont	113 A at T_C = 25 °C - Supports high-power output in industrial motor control and automotive auxiliary supplies without parallel devices.
Q_g	45 nC (0–10 V) - Determines gate driver power requirement; enables efficient 100–500 kHz switching with moderate gate drive strength.
E_AS	71 mJ - Confirmed single-pulse avalanche capability ensures ruggedness against inductive switching transients in relay drivers and H-bridge freewheeling.
R_thJC	1.4 °C/W - Allows direct thermal path to heatsink; enables >100 W continuous dissipation with modest heatsinking at T_C ≤ 100 °C.
t_rr	27 ns (dI/dt = 500 A/μs) - Fast, soft reverse recovery minimizes switching loss and EMI in synchronous buck and half-bridge configurations.

Pinout & Package

Package: PG-TO220-3 (lead-free, RoHS-compliant), with isolated tab electrically connected to Drain. Mounting via screw or clip to heatsink; drain terminal forms primary thermal and current path.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control input	High-impedance MOS gate requiring <45 nC charge for full enhancement; sensitive to ESD and layout-induced ringing.
Pin 2 / Tab (Drain)	High-side power terminal	Electrically tied to metal tab; carries full load current and serves as primary thermal interface to heatsink.
Pin 3 (Source)	Reference node	Low-side return path; defines local ground for gate drive; must be routed with minimal inductance in high-dI/dt applications.

Key Features

Feature	Design Value
100% avalanche tested	Guarantees robustness under unclamped inductive switching events without derating - essential for motor phase-leg and solenoid drivers.
StrongIRFET™2 trench technology	Delivers 3.3 mΩ R_DS(on) with 45 nC Q_g, achieving optimal conduction–switching trade-off for 100–300 kHz power conversion.
Soft, fast body diode	t_rr = 27 ns and Q_rr = 94 nC at dI/dt = 500 A/μs enable low-loss synchronous rectification and reduced EMI in buck converters.
Pb-free, halogen-free	Complies with RoHS and IEC61249-2-21 - meets environmental requirements for automotive, industrial, and consumer end equipment.

Applications

Motor Drive Half-Bridge

On-Board Charger (OBC) DC-DC Stage

Use Scenario: High-current bidirectional motor control in 24 V industrial actuators and e-bike controllers.

IC Role / Device Role / Timing Role: Low-side and high-side switching element in half-bridge topology; handles 70–113 A peak currents with <3.3 mΩ on-resistance.

Use Value: Reduces conduction loss by >30% vs. legacy 5 mΩ MOSFETs, enabling smaller heatsinks and higher power density in compact motor modules.

Use Scenario: Primary-side synchronous rectifier in 3.3 kW OBC LLC resonant converter stage.

IC Role / Device Role / Timing Role: Synchronous FET replacing Schottky diodes; driven with precise timing to minimize reverse recovery loss.

Use Value: Q_g(sync) = 40 nC and t_rr = 27 ns reduce switching loss by ~45% compared to standard 40 V MOSFETs, improving OBC efficiency from 95.2% to 96.1%.

12 V Automotive DC-DC Converter

Industrial PLC Output Module

Use Scenario: Step-down regulator supplying 5 V/3 A to microcontrollers and sensors from 12 V battery rail.

IC Role / Device Role / Timing Role: Power switch in synchronous buck converter operating at 500 kHz with 70 A peak inductor current.

Use Value: R_thJC = 1.4 °C/W and 3.3 mΩ R_DS(on) allow operation at 100% duty cycle with case temperature <95 °C using minimal heatsinking.

Use Scenario: Solid-state relay replacement in 24 V digital output modules driving solenoids and valves.

IC Role / Device Role / Timing Role: Load switch with integrated avalanche ruggedness; handles inductive kickback without external snubbers.

Use Value: E_AS = 71 mJ withstands >100,000 cycles of 24 V/2 A inductive turn-off, eliminating failure modes seen with non-avalanche-rated MOSFETs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 40 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB033N04LGATMA1	Same R_DS(on) (3.3 mΩ), but in PG-TO263-3 (D²PAK) package; Q_g = 47 nC; slightly higher R_thJA.	Better suited for automated SMT assembly; lower profile but requires PCB copper area for thermal management instead of direct heatsink mounting.	Select when board space permits SMT layout and thermal design relies on large copper pour rather than mechanical heatsinking.
STL220N4F7AG	40 V, R_DS(on) = 2.2 mΩ (typ), Q_g = 62 nC, TO-220FP package; no avalanche rating specified.	Lower conduction loss but higher gate drive demand; lacks JEDEC-qualified avalanche testing - unsuitable for inductive switching without external protection.	Choose only for purely resistive or low-dI/dt loads where avalanche stress is absent; avoid in motor or relay drive applications.

Compared with IPB033N04LGATMA1 and STL220N4F7AG, IPP033N04NF2SAKMA1 uniquely balances low R_DS(on), moderate Q_g, and certified avalanche ruggedness in a through-hole heatsink-mountable package - making it the preferred choice for thermally constrained, high-reliability 24 V industrial power stages.

Availability

IPP033N04NF2SAKMA1 is available at Aetrix Electronics and suitable for motor drives, on-board chargers, 12 V/24 V DC-DC converters, and industrial PLC output modules requiring stable component supply and long-term manufacturing continuity.

Supply support for IPP033N04NF2SAKMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

This part belongs to the StrongIRFET™2 family, engineered specifically for high-current, high-efficiency switching in 12–48 V power systems - emphasizing low R_DS(on), fast switching, and rugged avalanche performance in industrial and transportation applications.

FAQ

What is the maximum junction temperature for reliable operation?

The absolute maximum junction temperature is 175 °C, and the device is characterized for continuous operation up to this limit. Derating is required above T_C = 25 °C per the thermal curves in the datasheet; at T_C = 100 °C, continuous current drops to ~70 A to maintain T_j ≤ 175 °C with R_thJC = 1.4 °C/W.

Is IPP033N04NF2SAKMA1 suitable for synchronous rectification?

Yes - it features Q_g(sync) = 40 nC (0–10 V) and a soft-recovery body diode with t_rr = 27 ns (dI/dt = 500 A/μs). These parameters enable efficient synchronous rectification in buck, boost, and LLC converters without significant shoot-through risk or excessive switching loss.

Does this MOSFET require a gate resistor for stability?

A gate resistor (typically 2.2–10 Ω) is recommended to dampen gate oscillation and control dV/dt during switching. The device's gate resistance R_G = 2.5 Ω (typ) and input capacitance C_iss = 3200 pF make it susceptible to ringing with low-impedance drivers; proper gate loop layout and resistor selection prevent false turn-on and EMI.

How does the avalanche rating impact system design?

The 71 mJ single-pulse avalanche energy rating allows the MOSFET to safely absorb inductive energy during unclamped inductive switching (e.g., motor phase turn-off or relay de-energization) without external snubbers. This eliminates need for clamping diodes or RC networks in many industrial control designs, reducing BOM count and board area.

IPP033N04NF2SAKMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: StrongIRFET™2

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 25A (Ta), 113A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 3.3mOhm @ 70A, 10V

Vgs(th) (Max) @ Id:: 3.4V @ 53µA

Gate Charge (Qg) (Max) @ Vgs:: 68 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3200 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 107W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3-U05

IPP033N04NF2SAKMA1 FAQ

1.How can I place an order for IPP033N04NF2SAKMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP033N04NF2SAKMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP033N04NF2SAKMA1 reliable?

The price and inventory of IPP033N04NF2SAKMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP033N04NF2SAKMA1 is usually 5 days.

3.What payment methods are accepted for IPP033N04NF2SAKMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP033N04NF2SAKMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP033N04NF2SAKMA1?

IPP033N04NF2SAKMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP033N04NF2SAKMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP033N04NF2SAKMA1?

For technical support, including IPP033N04NF2SAKMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP033N04NF2SAKMA1 requirements.

6.How does Aetrix verify that IPP033N04NF2SAKMA1 is sourced from the original manufacturer or authorized distributors?

All IPP033N04NF2SAKMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP033N04NF2SAKMA1 meets industry standards.

7.What is the process for return or replacement of IPP033N04NF2SAKMA1?

All IPP033N04NF2SAKMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP033N04NF2SAKMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP033N04NF2SAKMA1 part is unused and in its original packaging.

Return procedure for IPP033N04NF2SAKMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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