Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies IPP034N03LGHKSA1

Part No.:
IPP034N03LGHKSA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-220-3
Datasheet:
AetrixIPP034N03LGHKSA1.pdf
Description:
MOSFET N-CH 30V 80A TO220-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,465

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

IPP034N03LGHKSA1 from Infineon Technologies is an N-channel logic-level power MOSFET in PG-TO220-3-1 package, rated for 30 V VDS, 3.4 mΩ RDS(on) at VGS = 10 V, 80 A continuous drain current, and avalanche-rated operation-designed for high-efficiency DC/DC converters and SMPS primary-side switching stages in telecom and server power supplies.

For engineers reviewing the IPP034N03LGHKSA1 datasheet, IPP034N03LGHKSA1 pinout, IPP034N03LGHKSA1 application, or IPP034N03LGHKSA1 equivalent, key selection criteria include its low gate charge × RDS(on) figure of merit (FOM), 25 nC total gate charge at 10 V, 4.5 V logic-level drive compatibility, and validated avalanche energy rating of 70 mJ for robust transient handling in hard-switched topologies.

Technical Context

This MOSFET employs Infineon's OptiMOS™ 3 technology, optimized for high-frequency switching with minimized conduction and switching losses. Its dynamic parameters include Ciss = 4000–5300 pF, Coss = 1400–1900 pF, and Qg = 25 nC (VDD = 15 V, ID = 30 A), enabling efficient operation in synchronous rectification and half-bridge configurations up to 1 MHz.

The device features a fully characterized reverse diode with VSD = 0.83–1.1 V at IF = 30 A and Qrr = 20 nC under specified dI/dt conditions, supporting ZVS-assisted designs and reducing body-diode conduction loss in buck-derived topologies.

Key Specifications

ParameterValue and Actual Design Meaning
VDS Rating30 V - supports 24 V input rail systems with margin for voltage spikes and ripple
RDS(on) max3.4 mΩ at VGS = 10 V - enables <1 W conduction loss at 80 A, critical for high-current POL converters
ID Continuous80 A at TC = 25 °C - requires heatsink with RthJC ≤ 1.6 K/W for thermal compliance
Qg Total25 nC at VGS = 0–10 V - determines gate driver current requirement (~2.5 A peak for 10 ns rise time)
EAS70 mJ single-pulse avalanche energy - ensures reliability during inductive turn-off transients without external snubbers
VGS(th)1.0–2.2 V - guarantees full enhancement with standard 3.3 V or 5 V logic-level controllers
Qgd5.6 nC - directly impacts Miller-induced switching delay and dv/dt immunity in high-side configurations

Pinout & Package

IPP034N03LGHKSA1 uses the PG-TO220-3-1 package: through-hole, isolated drain tab, 3-pin configuration with standard TO-220 footprint and mechanical mounting hole. Thermal resistance junction-to-case is 1.6 K/W, measured from drain tab to source pin.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (Source)Source terminal (S)Reference node for gate drive; connects to low-side return path and PCB ground plane
Pin 2 (Gate)Control terminal (G)High-impedance input requiring low-inductance gate loop; drives channel conduction via VGS
Pin 3 (Drain)Power output terminal (D)Exposed metal tab electrically connected to drain; serves as primary heat dissipation surface and high-current path

Key Features

FeatureDesign Value
Logic-level gate driveOperates fully enhanced at VGS ≥ 4.5 V, compatible with microcontroller GPIOs and low-voltage PWM controllers
Avalanche-rated constructionGuaranteed single-pulse EAS = 70 mJ enables reliable operation in non-clamped inductive switching without derating
Low Qg × RDS(on) FOM~85 mΩ·nC - balances switching speed and conduction loss for optimal efficiency in 300–1000 kHz SMPS
RoHS & halogen-freePb-free plating and IEC61249-2-21 compliant materials meet industrial and telecom environmental requirements

Applications

Telecom AC-DC Front-EndServer VRM High-Side Switch

Use Scenario: Primary-side switch in 3 kW telecom rectifier with PFC + LLC cascade.

IC Role / Device Role / Timing Role: High-side switching element in LLC half-bridge resonant converter operating at 300–500 kHz.

Use Value: Low RDS(on) minimizes conduction loss at 80 A load; 4.5 V logic drive simplifies gate driver integration with UCC25630x controllers.

Use Scenario: High-current point-of-load (POL) converter supplying CPU core voltage in dual-socket servers.

IC Role / Device Role / Timing Role: Synchronous rectifier in 4-phase interleaved buck converter with 1 MHz switching frequency.

Use Value: 25 nC Qg enables fast turn-on with minimal driver loss; avalanche rating protects against phase-current imbalance faults.

Industrial Motor Drive InverterEV Onboard Charger (OBC) PFC Stage

Use Scenario: 3-phase inverter stage in 7.5 kW servo drive with regenerative braking.

IC Role / Device Role / Timing Role: Low-side switch in IGBT/MOSFET hybrid inverter leg handling bidirectional current flow.

Use Value: 80 A continuous rating and 320 A pulsed capability support motor stall currents; low VSD reduces freewheeling loss during regeneration.

Use Scenario: Boost switch in 6.6 kW single-phase OBC PFC stage meeting IEC 61000-3-2 Class A.

IC Role / Device Role / Timing Role: Fast-switching boost transistor operating in CCM with 65 kHz–100 kHz variable frequency control.

Use Value: 3.4 mΩ RDS(on) maintains >98.5% efficiency at full load; Qrr = 20 nC limits diode recovery loss and EMI generation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IPB034N03LGSMD version in PG-TO263-3 package; identical electrical specs but lower RthJA (40 K/W vs 62 K/W on minimal PCB)Better suited for space-constrained, high-density PCB layouts with forced-air coolingSelect when board area is limited and thermal interface to heatsink is via soldered copper pad rather than mechanical clamp
STL110N3LLH630 V, 110 A, RDS(on) = 2.8 mΩ, Qg = 34 nC - higher current rating but larger gate drive demandPreferred in higher-power (>4 kW) PFC or inverters where peak current exceeds 80 AChoose only if system requires >10 A additional headroom and can accommodate increased gate drive power and layout inductance

Compared with IPB034N03LG, IPP034N03LGHKSA1 offers superior mechanical mounting rigidity and higher pulse current tolerance due to TO-220 leadframe; versus STL110N3LLH6, it delivers lower gate drive burden and tighter VGS(th) distribution for stable multi-phase current sharing.

Availability

IPP034N03LGHKSA1 is available at Aetrix Electronics and suitable for telecom rectifiers, server VRMs, and industrial motor drives requiring stable component supply, long-lifecycle support, and JEDEC-qualified reliability.

Supply support for IPP034N03LGHKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and qualification standards.

This part belongs to the OptiMOS™ 3 logic-level MOSFET product line, engineered specifically for high-efficiency, high-frequency DC/DC conversion in datacenter, telecom, and industrial power systems.

FAQ

What is the maximum safe operating temperature for IPP034N03LGHKSA1?

The junction temperature must not exceed 175 °C under any operating condition. With RthJC = 1.6 K/W and 94 W power dissipation at TC = 25 °C, thermal design must ensure case temperature remains ≤ 75 °C at full 80 A load to maintain 100 °C safety margin. Derating curves in the datasheet define linear ID reduction above 25 °C case temperature.

Can IPP034N03LGHKSA1 be used in synchronous rectification?

Yes-it is qualified for synchronous rectifier use with its low RDS(on) and characterized reverse diode. The 0.83–1.1 V VSD and 20 nC Qrr enable efficient body-diode conduction during dead-time, while logic-level gate drive allows direct control by standard SR controllers like UCC24612 without level-shifting.

Is IPP034N03LGHKSA1 pin-compatible with earlier OptiMOS generations?

No-while the PG-TO220-3-1 footprint is mechanically identical, electrical characteristics differ significantly: OptiMOS 2 devices have higher RDS(on) and Qg, and lack the same avalanche energy rating. Direct replacement requires validation of gate drive timing, thermal margins, and transient stress in the target circuit.

Does this MOSFET require a gate resistor for stability?

Yes-a series gate resistor (typically 2.2–10 Ω) is required to dampen parasitic oscillation and control dv/dt during switching. The 1.6 Ω internal gate resistance and 5.6 nC Qgd make it susceptible to Miller-induced shoot-through in high-dv/dt environments; resistor value must be selected based on driver capability and layout parasitics per Figure 16 in the datasheet.

IPP034N03LGHKSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
OptiMOS™
Package/Case:
TO-220-3
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
3.4mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:
2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
25 nC @ 4.5 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
5300 pF @ 15 V
FET Feature:
-
Power Dissipation (Max):
94W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO220-3-1

IPP034N03LGHKSA1 FAQ

1.How can I place an order for IPP034N03LGHKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP034N03LGHKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP034N03LGHKSA1 reliable?

The price and inventory of IPP034N03LGHKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP034N03LGHKSA1 is usually 5 days.

3.What payment methods are accepted for IPP034N03LGHKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP034N03LGHKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP034N03LGHKSA1?

IPP034N03LGHKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP034N03LGHKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP034N03LGHKSA1?

For technical support, including IPP034N03LGHKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP034N03LGHKSA1 requirements.

6.How does Aetrix verify that IPP034N03LGHKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP034N03LGHKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP034N03LGHKSA1 meets industry standards.

7.What is the process for return or replacement of IPP034N03LGHKSA1?

All IPP034N03LGHKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP034N03LGHKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP034N03LGHKSA1 part is unused and in its original packaging.

Return procedure for IPP034N03LGHKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IPP034N03LGHKSA1 Tags

  • IPP034N03LGHKSA1
  • IPP034N03LGHKSA1 PDF
  • IPP034N03LGHKSA1 Datasheet
  • IPP034N03LGHKSA1 Specifications
  • IPP034N03LGHKSA1 Images
  • Infineon Technologies
  • Infineon Technologies IPP034N03LGHKSA1
  • Buy IPP034N03LGHKSA1
  • IPP034N03LGHKSA1 Price
  • IPP034N03LGHKSA1 Distributor
  • IPP034N03LGHKSA1 Supplier
  • IPP034N03LGHKSA1 Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER