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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP034N03LGXKSA1

Name: IPP034N03LGXKSA1
Brand: Infineon Technologies
SKU: IPP034N03LGXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP034N03LGXKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP034N03LGXKSA1.pdf

Description:: MOSFET N-CH 30V 80A TO220-3

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Product details

Overview

IPP034N03LGXKSA1 from Infineon Technologies is an N-channel logic-level power MOSFET in PG-TO220-3-1 package, rated for 30 V V_DS, 3.4 mΩ R_DS(on) at V_GS = 10 V, 80 A continuous drain current at T_C = 25 °C, and avalanche-rated for robust SMPS operation in DC/DC converters.

For engineers reviewing the IPP034N03LGXKSA1 datasheet, IPP034N03LGXKSA1 pinout, IPP034N03LGXKSA1 application, or IPP034N03LGXKSA1 equivalent, key selection criteria include gate charge (Q_g = 51 nC), low R_DS(on) × Q_g figure-of-merit, logic-level drive compatibility (V_GS(th) max = 2.2 V), and thermal resistance (R_thJC = 1.6 K/W).

Technical Context

This MOSFET employs Infineon's OptiMOS™ 3 technology, optimized for high-efficiency synchronous rectification and primary-side switching in 12 V–24 V input DC/DC converters. Its low gate threshold (1–2.2 V) enables direct drive from microcontrollers and PWM controllers without level-shifting.

It features a fully avalanche-rated structure (E_AS = 70 mJ), fast switching dynamics (t_r = 6.4 ns, t_f = 5.4 ns), and integrated body diode with Q_rr = 20 nC - critical for minimizing commutation losses in hard-switched topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 24 V bus systems and automotive 12 V/24 V rails.
R_DS(on) max	3.4 mΩ at V_GS = 10 V - Enables <1 W conduction loss at 80 A, supporting high-current, low-voltage output stages.
I_D cont.	80 A at T_C = 25 °C - Sustains high load currents in compact heatsinked designs like server VRMs and industrial PSUs.
Q_g	51 nC at V_DD = 15 V, I_D = 30 A - Determines gate driver power requirement and switching loss trade-off in 100–500 kHz SMPS.
E_AS	70 mJ - Confirmed single-pulse avalanche energy supports non-clamped inductive turn-off in flyback and LLC resonant converters.
R_thJC	1.6 K/W - Junction-to-case thermal resistance enables predictable thermal design when mounted on standard TO-220 heatsinks.
V_GS(th)	1–2.2 V - Logic-level threshold ensures full enhancement with 3.3 V or 5 V gate drive, eliminating need for external level shifters.

Pinout & Package

Package: PG-TO220-3-1 - Through-hole, isolated tab, 3-pin vertical mounting configuration with drain connected to metal tab for direct heatsinking.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Reference node for gate drive; connects to low-side return path and PCB ground plane.
Pin 2 (Gate)	Control input	High-impedance MOSFET gate requiring low-inductance layout to minimize ringing during fast switching.
Pin 3 (Drain)	Power output / high-side switch node	Internally bonded to metal tab; must be electrically isolated from heatsink unless system design permits common-drain topology.

Key Features

Feature	Design Value
Logic-level gate drive	V_GS(th) ≤ 2.2 V enables direct interface with 3.3 V/5 V MCUs and PWM ICs without gate drivers.
Avalanche ruggedness	Rated for repetitive single-pulse E_AS = 70 mJ - eliminates need for external snubbers in inductive load switching.
Low R_DS(on) × Q_g FOM	~173 mΩ·nC - balances conduction and switching losses for optimal efficiency in 200–400 kHz DC/DC converters.
Halogen-free & RoHS	Complies with IEC61249-2-21 and JEDEC J-STD-20 - suitable for consumer, industrial, and automotive applications with strict material compliance.

Applications

Server Voltage Regulator Module (VRM)

Automotive Body Control Module (BCM) Power Switch

Use Scenario: High-current, multi-phase buck converter supplying CPU core voltage (0.8–1.2 V @ up to 200 A).

IC Role / Device Role / Timing Role: Synchronous rectifier in low-side position, switching at 300–500 kHz with precise dead-time control.

Use Value: 3.4 mΩ R_DS(on) minimizes I²R loss under heavy load; 51 nC Q_g allows efficient gate driving with integrated DrMOS controllers.

Use Scenario: 12 V load switching for headlights, HVAC actuators, or window lift motors in 12 V vehicle electrical architecture.

IC Role / Device Role / Timing Role: High-side or low-side power switch controlled by CAN-linked MCU with PWM dimming or soft-start sequencing.

Use Value: Logic-level V_GS(th) ensures reliable turn-on from 3.3 V MCU GPIO; avalanche rating handles inductive kickback from motor windings.

Industrial 24 V DC/DC Converter

Telecom Intermediate Bus Converter (IBC)

Use Scenario: Isolated half-bridge or active clamp forward converter converting 24 V input to 5 V/12 V outputs for PLC I/O modules.

IC Role / Device Role / Timing Role: Primary-side switch operating in hard-switched mode with 200–300 kHz frequency and 50% duty cycle.

Use Value: 70 mJ E_AS withstands voltage overshoot during transformer reset; 1.6 K/W R_thJC supports stable operation on minimal heatsink area.

Use Scenario: Non-isolated 48 V-to-12 V intermediate bus converter in telecom shelf power systems with strict efficiency targets (>95%).

IC Role / Device Role / Timing Role: Synchronous rectifier in secondary-side buck stage, driven by self-driven or controller-synchronized gate signals.

Use Value: Low Q_rr (20 nC) and fast body diode recovery reduce reverse recovery loss; 3.4 mΩ R_DS(on) maintains high efficiency at 100+ A output currents.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB034N03LG	SMD version in PG-TO263-3 package; identical R_DS(on), Q_g, and V_GS(th); R_thJA = 40 K/W (vs. 62 K/W for TO-220 on minimal footprint).	Preferred for automated PCB assembly and space-constrained layouts; unsuitable for through-hole prototyping or manual heatsink mounting.	Select IPB034N03LG when surface-mount manufacturing and thermal performance on 6 cm² copper are prioritized over mechanical serviceability.
IRL3803PBF	Legacy Vishay part: 30 V, 140 A, R_DS(on) = 3.3 mΩ, Q_g = 71 nC, V_GS(th) = 1–2.5 V; higher gate charge increases driver loss and limits max switching frequency.	Compatible in legacy 30 V SMPS designs but less efficient above 300 kHz due to slower switching and higher Q_g.	Choose IRL3803PBF only for drop-in replacement in existing designs where gate driver capability exceeds 51 nC; not recommended for new high-frequency designs.

Compared with IPB034N03LG, IPP034N03LGXKSA1 offers superior mechanical mounting flexibility and thermal interface control via TO-220 tab, while IRL3803PBF trades higher switching loss for broader legacy availability - making IPP034N03LGXKSA1 optimal for new 200–500 kHz power stages requiring logic-level drive and repeatable thermal management.

Availability

IPP034N03LGXKSA1 is available at Aetrix Electronics and suitable for server VRMs, automotive BCMs, and industrial 24 V DC/DC converters requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IPP034N03LGXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and AEC-Q101.

This device belongs to Infineon's OptiMOS™ 3 logic-level power MOSFET product line, engineered specifically for high-efficiency, high-current switching in 12 V–24 V input DC/DC converters and automotive body electronics.

FAQ

Is IPP034N03LGXKSA1 suitable for synchronous rectification in a 48 V-to-12 V buck converter?

Yes - its 3.4 mΩ R_DS(on) at 10 V gate drive, low Q_rr (20 nC), and logic-level threshold enable efficient synchronous rectification at 12 V output with 100+ A current. Gate drive must provide ≥4.5 V to ensure full enhancement; thermal design must accommodate 1.6 K/W R_thJC with appropriate heatsinking.

What is the maximum safe operating temperature for continuous 80 A drain current?

Continuous 80 A is rated only at T_C = 25 °C. At T_C = 100 °C, the derated I_D is 77 A per datasheet. Junction temperature must remain ≤175 °C; actual max ambient depends on heatsink performance, airflow, and PCB copper area - typical design limit is T_J ≤150 °C for reliability margin.

Does IPP034N03LGXKSA1 require a gate resistor for EMI control in 300 kHz switching?

Yes - a 2.2–4.7 Ω gate resistor is recommended to dampen ringing caused by parasitic L_g/C_iss resonance. The device's 1.6 Ω intrinsic gate resistance and 51 nC total gate charge make it sensitive to layout-induced oscillation; resistor value must balance switching speed (losses) and EMI suppression.

Can IPP034N03LGXKSA1 replace IPP040N03LG in an existing design?

No - IPP040N03LG has higher R_DS(on) (4.0 mΩ) and lower Q_g (42 nC). Swapping introduces 15% higher conduction loss but may reduce switching loss slightly. Thermal and layout validation is required; gate drive strength must be verified for the higher Q_g of IPP034N03LGXKSA1.

IPP034N03LGXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.4mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 51 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5300 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 94W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3-1

IPP034N03LGXKSA1 FAQ

1.How can I place an order for IPP034N03LGXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP034N03LGXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP034N03LGXKSA1 reliable?

The price and inventory of IPP034N03LGXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP034N03LGXKSA1 is usually 5 days.

3.What payment methods are accepted for IPP034N03LGXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP034N03LGXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP034N03LGXKSA1?

IPP034N03LGXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP034N03LGXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP034N03LGXKSA1?

For technical support, including IPP034N03LGXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP034N03LGXKSA1 requirements.

6.How does Aetrix verify that IPP034N03LGXKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP034N03LGXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP034N03LGXKSA1 meets industry standards.

7.What is the process for return or replacement of IPP034N03LGXKSA1?

All IPP034N03LGXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP034N03LGXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP034N03LGXKSA1 part is unused and in its original packaging.

Return procedure for IPP034N03LGXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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