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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP034N08N5XKSA1

Name: IPP034N08N5XKSA1
Brand: Infineon Technologies
SKU: IPP034N08N5XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP034N08N5XKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP034N08N5XKSA1.pdf

Description:: TRENCH 40<-<100V

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPP034N08N5XKSA1 from Infineon Technologies is an N-channel enhancement-mode power MOSFET in TO-220-3 package, rated for 80 V V_DS, 3.4 mΩ R_DS(on) at V_GS = 10 V, and 120 A continuous drain current at T_C = 25 °C. It features low gate charge (Q_G = 69 nC), 100% avalanche tested ruggedness, and is optimized for high-frequency synchronous rectification in DC-DC converters.

For engineers reviewing the IPP034N08N5XKSA1 datasheet, IPP034N08N5XKSA1 pinout, IPP034N08N5XKSA1 application, or IPP034N08N5XKSA1 equivalent, key selection criteria include R_DS(on) vs. temperature stability, Q_g/Q_oss trade-offs for ZVS/ZCS topologies, thermal resistance (R_thJC = 0.7 K/W), and SOA compliance under pulsed load conditions.

Technical Context

This OptiMOS™ 5 device uses trench-gate superjunction technology to achieve ultra-low R_DS(on) × Q_G figure-of-merit (FOM) of 234 mΩ·nC. Its gate threshold voltage (V_GS(th) = 2.2–3.8 V) ensures robust noise immunity while enabling standard 5 V or 10 V gate drive compatibility.

The integrated body diode exhibits fast reverse recovery (t_rr = 73–146 ns, Q_rr = 166–332 nC) and low forward voltage (V_SD = 0.97 V at I_F = 100 A), making it suitable for synchronous rectifier operation without external Schottky replacement in 12 V/48 V input buck converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	80 V - Maximum blocking voltage for 48 V bus systems with 20 % margin
R_DS(on), max	3.4 mΩ at V_GS = 10 V - Enables <1 W conduction loss at 100 A in TO-220 package
I_D, cont	120 A at T_C = 25 °C - Supports high-current output stages in server VRMs
Q_G	69 nC - Low gate drive energy enables >1 MHz switching with minimal driver loss
E_AS	186 mJ - Withstands single-pulse inductive energy in hard-switched PFC stages
R_thJC	0.7 K/W - Allows 167 W dissipation with ≤117 °C junction rise above case at 25 °C ambient
t_rr	73 ns typical - Reduces diode recovery loss and EMI in synchronous buck converters

Pinout & Package

TO-220-3 package with isolated tab (Drain-connected). Standard through-hole mounting; tab serves as primary heat path to heatsink. RoHS-compliant lead-free plating.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Lead)	Gate	High-impedance control terminal; requires low-inductance gate loop to minimize ringing during 100+ A switching
Pin 2 (Tab)	Drain	Main power terminal; electrically connected to metal tab-must be insulated from heatsink unless system ground referenced
Pin 3 (Lead)	Source	Power return and gate reference node; critical for stable gate drive referencing in high-dI/dt layouts

Key Features

Feature	Design Value
Ultra-low R_DS(on) × Q_G FOM	234 mΩ·nC - Enables higher efficiency than prior-gen OptiMOS™ 4 in 500 kHz–1 MHz DC-DC stages
100 % avalanche rated	186 mJ single-pulse E_AS - Eliminates need for external snubbers in inductive load switching
Fast body diode	t_rr = 73 ns, Q_rr = 166 nC - Reduces cross-conduction loss and improves light-load efficiency in sync-FET mode
JEDEC qualified	J-STD-020 MSL1 rating - Supports lead-free reflow without moisture sensitivity concerns
Halogen-free construction	Complies with IEC61249-2-21 - Meets environmental requirements for industrial and telecom equipment

Applications

Server Voltage Regulator Modules (VRMs)

Industrial 48 V DC-DC Converters

Use Scenario: High-current, multi-phase buck converter supplying CPU/GPU core voltage (0.8–1.2 V) from 12 V intermediate bus.

IC Role / Device Role / Timing Role: High-side and low-side synchronous rectifier MOSFET in each phase leg, switching at 500 kHz–1 MHz.

Use Value: 3.4 mΩ R_DS(on) reduces conduction loss by ≥15 % vs. comparable 4.5 mΩ devices, directly improving VRM full-load efficiency.

Use Scenario: Isolated half-bridge LLC resonant converter converting 48 V input to 12 V/24 V outputs for factory automation controllers.

IC Role / Device Role / Timing Role: Primary-side switch operating in ZVS region; body diode used for freewheeling during dead time.

Use Value: Low Q_oss (82 nC) and fast t_rr minimize capacitive turn-on loss and reduce dead-time-induced voltage spikes.

Telecom Rectifier Modules

Onboard Charger (OBC) Auxiliary Supplies

Use Scenario: Non-isolated buck converter deriving 3.3 V/5 V bias rails from 54 V telecom battery backup (–48 V nominal).

IC Role / Device Role / Timing Role: Power switch in high-efficiency point-of-load regulator powering FPGA, PHY, and management ICs.

Use Value: R_thJC = 0.7 K/W allows direct heatsink mounting without thermal interface pads, simplifying mechanical design and reducing BOM cost.

Use Scenario: 12 V auxiliary supply in EV onboard charger, powered from 400 V–800 V DC link via flyback or forward converter.

IC Role / Device Role / Timing Role: Primary-side switch in high-voltage flyback topology operating up to 100 kHz with clamp circuit.

Use Value: 80 V V_DS rating provides sufficient margin over reflected flyback voltage (≤65 V), avoiding overstress during line transients.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB034N08N5ATMA1	Same die, D²PAK-3L package; R_thJC = 0.9 K/W; higher Q_G (72 nC)	Better suited for surface-mount PCBs with limited heatsinking area; lower peak current capability due to thermal limit	Select for automated assembly where TO-220 through-hole is not feasible
STP120N8F6	80 V, 3.5 mΩ, Q_G = 85 nC, R_thJC = 0.8 K/W; no specified E_AS rating	Lacks guaranteed avalanche ruggedness; slower t_rr (120 ns) increases sync-FET losses	Acceptable for non-critical, low-reliability consumer supplies where cost is primary driver

Compared with IPB034N08N5ATMA1, IPP034N08N5XKSA1 offers superior thermal performance and lower gate drive loss in through-hole designs; versus STP120N8F6, it delivers verified avalanche robustness and faster diode recovery-critical for automotive-grade and telecom infrastructure use.

Availability

IPP034N08N5XKSA1 is available at Aetrix Electronics and suitable for server VRMs, industrial 48 V DC-DC converters, and telecom rectifier modules requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IPP034N08N5XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to the OptiMOS™ 5 family-designed specifically for high-efficiency, high-frequency power conversion in data center, telecom, and EV infrastructure applications where low R_DS(on) and fast switching are essential.

FAQ

Is IPP034N08N5XKSA1 suitable for synchronous rectification in a 48 V to 12 V buck converter?

Yes. Its low R_DS(on) (3.4 mΩ), fast body diode (t_rr = 73 ns), and low Q_oss (82 nC) make it ideal for low-side synchronous rectification in 48 V input buck converters operating up to 1 MHz. The 120 A rating supports high-current designs with margin, and the TO-220 package allows direct heatsink attachment for thermal management.

What is the maximum recommended gate resistor value for reliable 1 MHz switching?

For 1 MHz operation with minimal overshoot and ringing, a gate resistor of 1.6 Ω (as used in the datasheet's dynamic test condition) is validated. Higher values (>5 Ω) increase switching time and losses; lower values (<1 Ω) risk gate driver instability. Layout must minimize gate loop inductance (<2 nH) to maintain edge integrity.

Does IPP034N08N5XKSA1 require a negative gate turn-off voltage to prevent shoot-through?

No. Its V_GS(th) range (2.2–3.8 V) and low Miller plateau voltage (5.0 V typical) allow safe operation with 0 V turn-off in well-designed gate drivers. Negative turn-off is unnecessary unless operating in extreme dV/dt environments (>50 V/ns) near high-power switching nodes.

Can this MOSFET replace IPP040N08N5 in an existing design?

Yes-with verification. IPP034N08N5XKSA1 has 12 % lower R_DS(on) (3.4 vs. 4.0 mΩ) and 10 % lower Q_G (69 vs. 77 nC), improving conduction and switching efficiency. Thermal design must confirm junction temperature remains within 175 °C limit, especially if board layout or heatsinking is unchanged.

IPP034N08N5XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 120A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 3.4mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 3.8V @ 108µA

Gate Charge (Qg) (Max) @ Vgs:: 87 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 6240 pF @ 40 V

FET Feature:: -

Power Dissipation (Max):: 167W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3-1

IPP034N08N5XKSA1 FAQ

1.How can I place an order for IPP034N08N5XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP034N08N5XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP034N08N5XKSA1 reliable?

The price and inventory of IPP034N08N5XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP034N08N5XKSA1 is usually 5 days.

3.What payment methods are accepted for IPP034N08N5XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP034N08N5XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP034N08N5XKSA1?

IPP034N08N5XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP034N08N5XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP034N08N5XKSA1?

For technical support, including IPP034N08N5XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP034N08N5XKSA1 requirements.

6.How does Aetrix verify that IPP034N08N5XKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP034N08N5XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP034N08N5XKSA1 meets industry standards.

7.What is the process for return or replacement of IPP034N08N5XKSA1?

All IPP034N08N5XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP034N08N5XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP034N08N5XKSA1 part is unused and in its original packaging.

Return procedure for IPP034N08N5XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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