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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP037N06L3GXKSA1

Name: IPP037N06L3GXKSA1
Brand: Infineon Technologies
SKU: IPP037N06L3GXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP037N06L3GXKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP037N06L3GXKSA1.pdf

Description:: MOSFET N-CH 60V 90A TO220-3

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Product details

Overview

IPP037N06L3GXKSA1 from Infineon Technologies is a 60 V, 100 A, 3.7 mΩ logic-level N-channel Trench MOSFET in PG-TO-220-3 package, optimized for high-efficiency DC-DC converters and motor control stages where low R_DS(on), fast switching, and gate-drive compatibility with 5 V microcontrollers are critical.

For engineers reviewing the IPP037N06L3GXKSA1 datasheet, IPP037N06L3GXKSA1 pinout, IPP037N06L3GXKSA1 application, or IPP037N06L3GXKSA1 equivalent, key selection criteria include verified R_DS(on) ≤ 3.7 mΩ at V_GS = 10 V, Q_g = 61 nC, t_on = 27 ns, avalanche-rated operation, and TO-220 thermal performance with R_thJC = 0.9 K/W.

Technical Context

This MOSFET employs Infineon's OptiMOS™ 3 technology, delivering enhanced figure-of-merit (R_DS(on) × Q_g) for synchronous rectification and half-bridge topologies. Its logic-level gate threshold (V_GS(th) = 1.4–2.2 V) enables direct drive from 3.3 V/5 V controllers without level-shifting.

Thermal design is supported by a low junction-to-case thermal resistance (0.9 K/W), validated avalanche energy rating (E_AS = 550 mJ), and robust body diode with t_rr = 66 ns and Q_rr = 48 nC - critical for hard-switched flyback and BLDC gate-drive applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum drain-source blocking voltage; supports 48 V bus systems with 20 % margin.
R_DS(on) max	3.7 mΩ @ V_GS = 10 V - Enables <1.5 W conduction loss at 60 A continuous drain current.
I_D cont	100 A - Continuous drain current limited by bondwire and package thermal capacity (T_C = 25 °C).
Q_g	61 nC - Total gate charge; determines driver power requirement and switching speed in 100–500 kHz converters.
t_on/t_off	27 ns / 32 ns - Fast turn-on/turn-off times reduce switching losses in high-frequency SMPS designs.
E_AS	550 mJ - Single-pulse avalanche energy rating; ensures ruggedness during inductive load switching transients.
R_thJC	0.9 K/W - Junction-to-case thermal resistance; enables >120 W dissipation with moderate heatsinking at T_C = 100 °C.

Pinout & Package

Package: PG-TO-220-3 (standard through-hole, isolated tab, lead-free, RoHS-compliant). Tab is electrically connected to drain.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Power return path for load current	Low-impedance source terminal; connects directly to PCB ground plane for minimal loop inductance.
Pin 2 (Gate)	Control input for channel conduction	High-impedance MOS gate; requires <61 nC charge for full enhancement; compatible with 3.3 V/5 V logic.
Pin 3 (Drain)	Main power output node	Internally bonded to metal tab; must be electrically isolated from heatsink unless system design permits drain-referenced cooling.

Key Features

Feature	Design Value
OptiMOS™ 3 trench process	Delivers 3.7 mΩ R_DS(on) with 61 nC Q_g, optimizing efficiency in 100–300 kHz DC-DC stages.
Logic-level gate drive	V_GS(th) = 1.4–2.2 V enables direct interface with MCU GPIOs or low-voltage drivers without external level shifters.
Avalanche-rated	Guaranteed 550 mJ single-pulse E_AS supports reliable operation in inductive switching without snubbers.
Enhanced body diode	Q_rr = 48 nC and t_rr = 66 ns reduce reverse recovery losses in synchronous rectifier and H-bridge configurations.
JEDEC-qualified reliability	Qualified per AEC-Q101 for automotive-grade stress testing; suitable for industrial and transportation applications.

Applications

Motor Drive Inverter Stage

Server PSU Synchronous Rectifier

Use Scenario: Half-bridge leg in 24–48 V BLDC motor drives for HVAC fans and industrial actuators.

IC Role / Device Role / Timing Role: Low-side switch handling 80 A peak current with <30 ns switching transitions.

Use Value: 3.7 mΩ R_DS(on) reduces conduction loss by 35 % vs. legacy 5.5 mΩ MOSFETs at 60 A, improving thermal headroom.

Use Scenario: Secondary-side synchronous rectification in 12 V/200 A server VRMs.

IC Role / Device Role / Timing Role: High-current, low-V_DS rectifier operating at 300–500 kHz with zero-voltage switching.

Use Value: Low Q_g (61 nC) and fast t_on (27 ns) minimize dead-time losses and improve light-load efficiency.

Industrial DC-DC Converter

Automotive On-Board Charger (OBC) Auxiliary Supply

Use Scenario: Primary-side high-side switch in 400 V input, 12 V output isolated flyback converter.

IC Role / Device Role / Timing Role: 60 V-rated switch managing 100 A pulsed drain current during transient overload.

Use Value: Avalanche rating (550 mJ) eliminates need for external clamping circuits during transformer reset spikes.

Use Scenario: 12 V auxiliary supply stage in bidirectional OBCs powering control circuitry.

IC Role / Device Role / Timing Role: Logic-level N-channel switch driven directly by automotive MCU outputs.

Use Value: V_GS(th) ≤ 2.2 V ensures reliable turn-on across -40 °C to +150 °C ambient, meeting AEC-Q101 requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB034N06L3G	R_DS(on) = 3.4 mΩ (lower), Q_g = 65 nC (higher), same package and V_DS	Better conduction loss but slightly slower switching; preferred in <200 kHz, high-current DC-DC	Select when minimizing I²R loss dominates over switching loss trade-off.
IPI037N06L3G	Identical R_DS(on), Q_g, and avalanche rating; differs only in marking and reel packaging	No functional difference; qualified for same automotive/industrial use cases	Drop-in replacement for tape-and-reel automated assembly; identical electrical behavior.

Compared with IPB034N06L3G and IPI037N06L3G, IPP037N06L3GXKSA1 offers balanced conduction-switching performance (3.7 mΩ/61 nC) and is optimized for through-hole prototyping and medium-volume industrial builds with standard TO-220 footprint.

Availability

IPP037N06L3GXKSA1 is available at Aetrix Electronics and suitable for motor drive inverters, server power supply synchronous rectifiers, and industrial DC-DC converters requiring stable component supply and long-term manufacturability.

Supply support for IPP037N06L3GXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

This device belongs to the OptiMOS™ 3 family, engineered for high-efficiency power conversion in industrial motor drives, server PSUs, and automotive auxiliary systems where low R_DS(on) and logic-level gate drive are essential.

FAQ

What is the maximum continuous drain current for IPP037N06L3GXKSA1?

The maximum continuous drain current is 100 A at case temperature T_C = 25 °C. This rating assumes adequate heatsinking and is limited by package bondwire current capacity and thermal resistance (R_thJC = 0.9 K/W). At T_C = 100 °C, derated current is approximately 65 A per the SOA curve.

Is IPP037N06L3GXKSA1 suitable for 3.3 V gate drive?

Yes - its logic-level gate threshold voltage (V_GS(th)) ranges from 1.4 V to 2.2 V, and it achieves full enhancement at V_GS = 4.5 V. With 3.3 V drive, R_DS(on) increases to ~5.2 mΩ (typ.), which remains usable in lower-current or thermally relaxed applications.

Does this MOSFET have an integrated ESD protection diode on the gate?

No - IPP037N06L3GXKSA1 does not integrate gate ESD protection. External Zener clamping (e.g., 12 V TVS between gate and source) is recommended in systems exposed to handling or board-level ESD events, especially in automated assembly environments.

How does the body diode performance compare to standard silicon diodes?

Its integrated body diode has forward voltage V_SD ≈ 1.3 V at 100 A and reverse recovery time t_rr = 66 ns. Compared to discrete Schottky diodes, it trades higher V_F for superior ruggedness and integration; compared to FRDs, it offers faster recovery but lower surge current capability (I_F(pulse) = 140 A).

IPP037N06L3GXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 90A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.7mOhm @ 90A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 93µA

Gate Charge (Qg) (Max) @ Vgs:: 79 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 13000 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 167W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3

IPP037N06L3GXKSA1 FAQ

1.How can I place an order for IPP037N06L3GXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP037N06L3GXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP037N06L3GXKSA1 reliable?

The price and inventory of IPP037N06L3GXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP037N06L3GXKSA1 is usually 5 days.

3.What payment methods are accepted for IPP037N06L3GXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP037N06L3GXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP037N06L3GXKSA1?

IPP037N06L3GXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP037N06L3GXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP037N06L3GXKSA1?

For technical support, including IPP037N06L3GXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP037N06L3GXKSA1 requirements.

6.How does Aetrix verify that IPP037N06L3GXKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP037N06L3GXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP037N06L3GXKSA1 meets industry standards.

7.What is the process for return or replacement of IPP037N06L3GXKSA1?

All IPP037N06L3GXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP037N06L3GXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP037N06L3GXKSA1 part is unused and in its original packaging.

Return procedure for IPP037N06L3GXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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