Infineon Technologies IPP037N08N3GHKSA1

Overview

IPP037N08N3GHKSA1 from Infineon Technologies is an N-channel enhancement-mode power MOSFET in PG-TO220-3 package, rated for 80 V V_DS, 3.5 mΩ max R_DS(on) at V_GS = 10 V and I_D = 100 A, with 100% avalanche tested ruggedness-designed for high-frequency synchronous rectification in DC/DC converters and industrial motor drives.

For engineers reviewing the IPP037N08N3GHKSA1 datasheet, IPP037N08N3GHKSA1 pinout, IPP037N08N3GHKSA1 application, or IPP037N08N3GHKSA1 equivalent, key selection criteria include gate charge (Q_g = 88–117 nC), thermal resistance (R_thJC = 0.7 K/W), reverse diode recovery (t_rr = 73 ns), and SOA robustness under pulsed drain current up to 400 A.

Technical Context

This OptiMOS™3 device uses trench-gate superjunction technology optimized for low Q_g × R_DS(on) figure-of-merit (FOM), enabling high-efficiency switching in hard-switched and resonant topologies. Its gate threshold voltage (V_GS(th) = 2.0–3.5 V) supports standard 10 V gate drive while maintaining noise immunity.

It integrates a fast, low-loss body diode (V_SD = 1.0–1.2 V at 100 A, t_rr = 73 ns, Q_rr = 136 nC) suitable for synchronous rectification without external Schottky replacement. Thermal design is enabled by low junction-to-case resistance (0.7 K/W) and JEDEC-compliant packaging.

Key Specifications

Pinout & Package

Package: PG-TO220-3 (standard through-hole, isolated tab, lead-free, RoHS-compliant).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar power MOSFET applications.

Compared with IPP040N08N5AKSA1, this part trades 0.5 mΩ lower on-resistance for 12–42 nC higher gate charge-favoring conduction-dominated applications. Against IPB035N08N3G, it offers identical electrical performance but through-hole mounting for prototyping and high-vibration environments.

Availability

IPP037N08N3GHKSA1 is available at Aetrix Electronics and suitable for server VRM power stages, industrial BLDC inverters, telecom DC/DC modules, and EV onboard charger PFC stages requiring stable component supply and long-term industrial lifecycle support.

Supply support for IPP037N08N3GHKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with leadership in silicon and wide-bandgap power devices.

This part belongs to the OptiMOS™3 family-engineered specifically for high-efficiency, high-frequency DC/DC conversion in enterprise computing, industrial automation, and renewable energy systems.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The maximum continuous drain current I_D is 100 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This rating assumes proper heatsinking to maintain case temperature ≤100 °C and accounts for R_DS(on) increase with junction temperature. Derating is not required between 25 °C and 100 °C per the published I_D vs. T_C curve.

Is the body diode suitable for synchronous rectification without external components?

Yes-the integrated body diode has t_rr = 73 ns and Q_rr = 136 nC at T_j = 25 °C, enabling reliable synchronous rectification in buck, flyback, and LLC converters up to 500 kHz. Its soft recovery characteristic minimizes voltage overshoot and EMI, eliminating need for parallel Schottky diodes in most medium-power designs.

Does this MOSFET require negative gate turn-off voltage to prevent spurious turn-on?

No-its gate threshold voltage V_GS(th) is 2.0–3.5 V with tight distribution, and gate leakage I_GSS is ≤100 nA at V_GS = 20 V. A 0 V to 10 V gate drive is sufficient; no negative bias is needed. However, a 1–2 Ω gate resistor is recommended to suppress oscillation during fast dV/dt transitions.

How does the 0.7 K/W R_thJC translate to practical heatsink requirements?

With R_thJC = 0.7 K/W and maximum P_tot = 214 W at T_C = 25 °C, a heatsink with R_thCA ≤ 0.5 K/W is required to hold T_j ≤ 175 °C at full load. In practice, a 200 cm² aluminum finned heatsink in still air achieves ~2.5 K/W; forced air or thermal interface material reduces effective R_thCA to meet this target.