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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP039N04LGHKSA1

Name: IPP039N04LGHKSA1
Brand: Infineon Technologies
SKU: IPP039N04LGHKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP039N04LGHKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP039N04LGHKSA1.pdf

Description:: MOSFET N-CH 40V 80A TO220-3

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Product details

Overview

IPP039N04LGHKSA1 from Infineon Technologies is an N-channel logic-level power MOSFET in PG-TO220-3 package, rated for 40 V V_DS, 3.9 mΩ R_DS(on) at V_GS = 10 V, and 80 A continuous drain current at T_C = 25 °C. It features 100% avalanche testing, optimized gate charge × R_DS(on) figure-of-merit (FOM), and is qualified per JEDEC standards for DC/DC converters and SMPS applications.

For engineers reviewing the IPP039N04LGHKSA1 datasheet, IPP039N04LGHKSA1 pinout, IPP039N04LGHKSA1 application, or IPP039N04LGHKSA1 equivalent, key selection criteria include its 4.5 V logic-level gate drive compatibility, low 3.9 mΩ on-resistance at 10 V, 59–78 nC total gate charge, 1.2–2.0 V gate threshold voltage, and thermal resistance of 1.6 K/W junction-to-case.

Technical Context

This MOSFET employs Infineon's OptiMOS™3 silicon technology, delivering enhanced switching speed and conduction efficiency for synchronous rectification and high-frequency DC/DC topologies. Its low R_DS(on) and optimized C_iss/C_oss ratio (typ. 4600 pF / 820 pF) support reduced switching losses in buck, boost, and LLC converters operating up to 1 MHz.

The device integrates a robust body diode with 50 nC reverse recovery charge (Q_rr) and 0.92–1.2 V forward voltage (V_SD) at 80 A, enabling reliable operation in hard-switched and synchronous FET configurations without external Schottky supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage compatible with 36 V nominal input rails and 12/24 V automotive or industrial bus systems.
R_DS(on) max	3.9 mΩ @ V_GS = 10 V - Enables <1.5 W conduction loss at 80 A, critical for high-current point-of-load regulators.
I_D cont.	80 A @ T_C = 25 °C - Supports high-power density designs with minimal parallel devices in server VRMs or telecom PSUs.
Q_g total	59–78 nC - Determines gate driver strength requirement; enables efficient 500 kHz–1 MHz switching with standard 2 A peak drivers.
V_GS(th)	1.2–2.0 V - Ensures full enhancement with 3.3 V or 5 V logic-level controllers, eliminating need for level shifters.
E_AS	60 mJ - Confirmed single-pulse avalanche energy supports robustness against inductive load transients and layout parasitics.
R_thJC	1.6 K/W - Allows direct thermal coupling to heatsink; enables >70 W dissipation with modest heatsinking in TO-220 footprint.

Pinout & Package

IPP039N04LGHKSA1 uses the PG-TO220-3-1 package: insulated tab, vertical mounting, through-hole leaded configuration with drain connected to the metal tab. Thermal path is optimized via direct tab-to-heatsink interface.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Low-side reference node; connects to ground or return path in buck/synchronous rectifier topologies.
Pin 2 (Gate)	Control input	High-impedance MOS gate requiring <100 nC drive; sensitive to ESD and ringing-requires local RC snubber or gate resistor.
Pin 3 (Drain)	Power output / high-side switch node	Internally bonded to metal tab; must be electrically isolated from heatsink unless using insulating pad or clip-mount solution.

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at V_GS ≥ 4.5 V, enabling direct interfacing with microcontrollers and PWM ICs without gate drivers.
Optimized FOM (Q_g × R_DS(on))	~230 nC·mΩ - Balances switching and conduction losses for highest efficiency in 300 kHz–1 MHz DC/DC stages.
100% avalanche tested	Guarantees ruggedness under unclamped inductive switching events common in motor drives and relay control circuits.
Pb-free & halogen-free	Complies with RoHS Directive 2011/65/EU and IEC 61249-2-21, supporting green manufacturing and end-of-life compliance.

Applications

Server Point-of-Load Regulator

Automotive Body Control Module

Use Scenario: High-current 12 V → 1 V/100 A VRM supplying CPU/GPU cores in data center servers.

IC Role / Device Role / Timing Role: Synchronous high-side or low-side power switch in multiphase buck converter with 500 kHz–1 MHz switching frequency.

Use Value: 3.9 mΩ R_DS(on) reduces conduction loss by >30% vs. legacy 6 mΩ MOSFETs, improving VRM efficiency from 92% to 94.5% at full load.

Use Scenario: 12 V DC/DC conversion for LED headlamp drivers and window lift motor control in modern vehicles.

IC Role / Device Role / Timing Role: Low-side switch for PWM-controlled loads with integrated diagnostic feedback via current sensing.

Use Value: 1.2–2.0 V V_GS(th) ensures reliable turn-on with automotive MCU GPIOs; 80 A rating supports peak motor surge currents without derating.

Industrial PLC Power Supply

Telecom Rectifier Module

Use Scenario: 48 V input, 5 V/20 A isolated flyback or active clamp forward supply powering I/O modules.

IC Role / Device Role / Timing Role: Primary-side switching transistor handling 100 kHz–300 kHz operation with tight duty cycle control.

Use Value: 60 mJ E_AS withstands transformer leakage inductance spikes during overcurrent shutdown, preventing catastrophic failure.

Use Scenario: 54 V input, 12 V/30 A non-isolated buck stage in 48 V telecom rectifier shelf units.

IC Role / Device Role / Timing Role: High-efficiency main switch in multi-kW distributed power architecture with forced-air cooling.

Use Value: 1.6 K/W R_thJC allows 75 W dissipation with 40 °C temperature rise-enabling compact heatsink design and higher power density than TO-263 alternatives.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB039N04LG	Same die, PG-TO263-3 package; R_thJC = 1.3 K/W; slightly lower C_oss (750 pF typ.)	Better thermal performance in surface-mount PCB layouts with large copper pour; less suitable for through-hole assembly	Select for space-constrained SMT designs where board-level thermal management dominates over mechanical mounting flexibility.
IRL1404ZPBF	40 V, 4.0 mΩ, 160 A (T_C=25°C), higher Q_g (110 nC), TO-220AB package, no avalanche rating	Lacks JEDEC qualification and 100% avalanche test; higher gate drive demand limits high-frequency use	Acceptable for cost-sensitive, non-critical 100 kHz applications where transient robustness is not required.

Compared with IPB039N04LG, IPP039N04LGHKSA1 trades 0.3 K/W higher junction-to-case thermal resistance for through-hole reliability and simplified heatsink mounting; versus IRL1404ZPBF, it delivers verified avalanche ruggedness and 25% lower gate charge-critical for high-efficiency, high-reliability SMPS.

Availability

IPP039N04LGHKSA1 is available at Aetrix Electronics and suitable for server point-of-load regulators, automotive body control modules, and industrial PLC power supplies requiring stable component supply, long-term lifecycle assurance, and JEDEC-qualified ruggedness.

Supply support for IPP039N04LGHKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

This part belongs to the OptiMOS™3 product line, engineered specifically for high-efficiency, high-current DC/DC conversion in computing, telecom, and automotive applications where low R_DS(on), fast switching, and logic-level drive are mandatory.

FAQ

What is the maximum safe operating temperature for IPP039N04LGHKSA1?

The junction temperature must not exceed 175 °C under any operating condition. At T_C = 100 °C, the device supports 73 A continuous drain current with V_GS = 4.5 V. Derating curves in the datasheet show linear reduction from 80 A at 25 °C to zero at 175 °C junction temperature, assuming proper heatsinking and R_thJC = 1.6 K/W.

Can IPP039N04LGHKSA1 be used in synchronous rectification mode?

Yes-it is explicitly characterized for synchronous rectifier use, with diode forward voltage V_SD = 0.92–1.2 V at 80 A and reverse recovery charge Q_rr = 50 nC. Its low R_DS(on) and fast body diode enable >3% efficiency gain over Schottky solutions in 12 V–48 V output buck converters operating above 200 kHz.

Is the drain tab electrically isolated in the PG-TO220-3 package?

No-the drain is internally connected to the metal tab. Electrical isolation from the heatsink requires a thermally conductive but electrically insulating pad (e.g., mica or ceramic) or insulating clip mount. Failure to isolate will short the drain to chassis ground if the heatsink is grounded.

Does IPP039N04LGHKSA1 require a gate resistor for stability?

Yes-a series gate resistor (typically 5–22 Ω) is recommended to dampen gate-source ringing caused by PCB trace inductance and driver output impedance. Without it, oscillation near 100–200 MHz can cause false turn-on, increased switching loss, and potential gate oxide stress, especially when driven by fast logic-level controllers.

IPP039N04LGHKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.9mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 2V @ 45µA

Gate Charge (Qg) (Max) @ Vgs:: 78 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 6100 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 94W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3

IPP039N04LGHKSA1 FAQ

1.How can I place an order for IPP039N04LGHKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP039N04LGHKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP039N04LGHKSA1 reliable?

The price and inventory of IPP039N04LGHKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP039N04LGHKSA1 is usually 5 days.

3.What payment methods are accepted for IPP039N04LGHKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP039N04LGHKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP039N04LGHKSA1?

IPP039N04LGHKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP039N04LGHKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP039N04LGHKSA1?

For technical support, including IPP039N04LGHKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP039N04LGHKSA1 requirements.

6.How does Aetrix verify that IPP039N04LGHKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP039N04LGHKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP039N04LGHKSA1 meets industry standards.

7.What is the process for return or replacement of IPP039N04LGHKSA1?

All IPP039N04LGHKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP039N04LGHKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP039N04LGHKSA1 part is unused and in its original packaging.

Return procedure for IPP039N04LGHKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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